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    0-80A Search Results

    0-80A Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    080A
    		Essentra Components TAPERED CAP - OD RANGE: 68.7 - 7 Original PDF 4.78MB
    badge NCE6080A
    		NCEPOWER NCE6080A is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, and low on-resistance of 6.5mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance in TO-220-3L package. Original PDF
    badge CP0080ABN
    		Jiangsu JieJie Microelectronics Co Ltd Bidirectional thyristor surge protector in SMA package with 6V switching voltage, 80A peak pulse current (10/1000μs), low capacitance of 20pF, and 30kV ESD protection, designed for overvoltage transient protection in communication equipment. Original PDF
    badge AK6080A
    		AK Semiconductor N-Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, 6.5mΩ typical RDS(ON) at VGS=10V, and 7.5mΩ at VGS=4.5V, featuring advanced trench technology for low on-resistance and high efficiency in switching applications. Original PDF
    badge NCE6080AI
    		NCEPOWER 60V, 80A NCE6080AI trench MOSFET with 5.5mOhm RDS(ON) at VGS=10V, advanced gate charge design, suitable for PWM and load switching applications, housed in TO-251 package. Original PDF
    badge JX080A
    		Jiangsu JieJie Microelectronics Co Ltd 8A sensitive gate SCR with 800V repetitive peak off-state and reverse voltage, high dV/dt capability, 2500 VRMS insulation rating, TO-220A package, and 100 A/μs critical rate of rise of on-state current. Original PDF
    badge NCE6080AT
    		NCEPOWER NCE6080AT is a Channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, and low on-resistance of 5.5mΩ at VGS=10V, utilizing advanced trench technology for high efficiency and thermal performance in TO-247 package. Original PDF
    badge NCE6080AK
    		NCEPOWER 60V, 80A NCE6080AK N-channel enhancement mode power MOSFET with trench technology, offering 6 mΩ typical RDS(ON) at VGS = 10V, low gate charge, and high current capability in a TO-252-2L package. Original PDF
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    0-80A Price and Stock

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    TDK Corporation C1608X7R1H102K080AE

    CAP CER 1000PF 50V X7R 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C1608X7R1H102K080AE Tape & Reel 664,000 4,000
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    Cornell Dubilier Electronics Inc SLPX332M080A9P3

    CAP ALUM 3300UF 20% 80V SNAP TH
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    DigiKey SLPX332M080A9P3 Bulk 44,887 1
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    Newark SLPX332M080A9P3 Bulk 36 1
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    TDK Corporation C1608X7R0J225K080AB

    CAP CER 2.2UF 6.3V X7R 0603
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    DigiKey () C1608X7R0J225K080AB Cut Tape 25,621 1
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    C1608X7R0J225K080AB Digi-Reel 25,621 1
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    onsemi NCD57080ADR2G

    DGTL ISO 3.75KV 1CH GT DVR 8SOIC
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    DigiKey () NCD57080ADR2G Digi-Reel 13,763 1
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    NCD57080ADR2G Cut Tape 13,763 1
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    NCD57080ADR2G Tape & Reel 12,500 2,500
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    Newark NCD57080ADR2G Cut Tape 1,000 1
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    Rochester Electronics NCD57080ADR2G 31 1
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    Avnet Silica NCD57080ADR2G 28 Weeks 2,500
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    Chip One Stop NCD57080ADR2G Cut Tape 2,396 0 Weeks, 1 Days 1
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    EBV Elektronik NCD57080ADR2G 2,500 29 Weeks 2,500
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    TDK Corporation C1608X8R1H222K080AE

    CAP CER 2200PF 50V X8R 0603
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey C1608X8R1H222K080AE Cut Tape 7,650 1
    • 1 $0.16
    • 10 $0.09
    • 100 $0.05
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    Newark C1608X8R1H222K080AE Cut Tape 550 10
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