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SPA08N Datasheets (7)

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Infineon Technologies

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SPA08N50C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	268.22KB	13
SPA08N50C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V_DS (max): 500.0 V; Package: TO-220 FullPAK; R_DS(ON) @ T_J=25Â°C V_GS=10: 600.0 mOhm; I_D(max) @ T_C=25Â°C: 7.6 A; I_Dpuls (max): 22.8 A;	Original	PDF	740.06KB	14
SPA08N50C3E8152	Infineon Technologies	Transistor Mosfet N-CH 600V 0.021A 3 pin SOT-23 T/R	Original	PDF	238.33KB	9
SPA08N50C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 560V 7.6A TO220FP	Original	PDF	727.71KB
SPA08N80C3	Infineon Technologies	Cool MOS Power Transistor	Original	PDF	254.94KB	12
SPA08N80C3	Infineon Technologies	N-Channel MOSFETs (>500V - 900V); Package: PG-TO220-3; V_DS (max): 800.0 V; Package: TO-220 FullPAK; R_DS(ON) @ T_J=25Â°C V_GS=10: 650.0 mOhm; I_D(max) @ T_C=25Â°C: 8.0 A; I_Dpuls (max): 24.0 A;	Original	PDF	337.28KB	10
SPA08N80C3XKSA1	Infineon Technologies	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 800V 8A TO220FP	Original	PDF	476.24KB

SPA08N Price and Stock

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Infineon Technologies AG


Infineon Technologies AG SPA08N80C3 Transistor: N-MOSFET; unipolar; 800V; 8A; 40W; PG-TO220-3-FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPA08N80C3		89		1	1 $2.69 10 $2.69 100 $1.48 1000 $1.48 10000 $1.48	Buy Now
Mouser Electronics	SPA08N80C3		526			1 $3.51 10 $2.28 100 $1.60 1000 $1.24 10000 $1.17	Buy Now
Quest Components	SPA08N80C3		85			1 $2.27 10 $2.27 100 $1.36 1000 $1.36 10000 $1.36	Buy Now
Infineon Technologies AG SPA08N80C3XKSA1 Transistor: N-MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	SPA08N80C3XKSA1				50	1 - 10 - 100 $1.22 1000 $1.15 10000 $1.15	Get Quote
Verical ()	SPA08N80C3XKSA1		7,546		7	1 - 10 $1.36 100 $1.24 1000 $1.06 10000 $1.06	Buy Now
	SPA08N80C3XKSA1		1,500		500	1 - 10 - 100 - 1000 $1.07 10000 $1.07	Buy Now
Avnet Americas	SPA08N80C3XKSA1	Tube		16 Weeks	500	1 - 10 - 100 - 1000 $0.95 10000 $0.93	Buy Now
Mouser Electronics	SPA08N80C3XKSA1		469			1 $3.60 10 $1.85 100 $1.64 1000 $1.26 10000 $1.18	Buy Now
Arrow Electronics ()	SPA08N80C3XKSA1		7,550	16 Weeks	1	1 $2.13 10 $1.35 100 $1.23 1000 $1.05 10000 $1.05	Buy Now
	SPA08N80C3XKSA1		1,500	16 Weeks	500	1 - 10 - 100 - 1000 $1.07 10000 $1.07	Buy Now

Newark	SPA08N80C3XKSA1	Bulk	404		1	1 $3.60 10 $1.85 100 $1.64 1000 $1.26 10000 $1.18	Buy Now
Quest Components	SPA08N80C3XKSA1		56			1 $2.25 10 $2.25 100 $1.35 1000 $1.35 10000 $1.35	Buy Now
Rutronik	SPA08N80C3XKSA1	Tube	350		50	1 - 10 - 100 $1.20 1000 $0.93 10000 $0.93	Buy Now
EBV Elektronik	SPA08N80C3XKSA1		10,500	13 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG SPA08N50C3XKSA1 Trans MOSFET N-CH 560V 7.6A 3-Pin(3+Tab) TO-220FP Tube
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	SPA08N50C3XKSA1		500		317	1 - 10 - 100 - 1000 $0.98 10000 $0.88	Buy Now
Rochester Electronics	SPA08N50C3XKSA1		930		1	1 - 10 - 100 $0.95 1000 $0.79 10000 $0.70	Buy Now

SPA08N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
08N80C3 Abstract: equivalent 08N80C3 SPA08N80C3 SPA08N80C3 EQUIVALENT JESD22 d51a C40W Contextual Info: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa08n80c3 pg-to220fp 08n80c3 equivalent 08n80c3 +4spa08n80c3 equivalent jesd22 d51a c40w	PDF
08N80C3 Abstract: equivalent 08N80C3 SPP08N80C3 SPA08N80C3 08n80c Q67040-S4437 transistor SPP08N80C3 08n80 Contextual Info: SPP08N80C3 SPA08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp08n80c3 spa08n80c3 p-to220-3-31 p-to220-3-1 +9p-to-220-3-31 q67040 s4436 08n80c3 equivalent 08n80c3 08n80c q67040-s4437 transistor spp08n80c3 08n80	PDF
08N80C3 Abstract: equivalent 08N80C3 Q67040-S4632 SPP08N80C3 transistor SPP08N80C3 SPA08N80C3 SPI08N80C3 Contextual Info: SPP08N80C3, SPI08N80C3 SPA08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 VDS 800 V RDS on 0.65 Ω ID 8 A P-TO262 P-TO220-3-1 • Extreme dv/dt rated	Original	spp08n80c3 spi08n80c3 spa08n80c3 p-to220-3-31 +7p-to262 p-to220-3-1 p-to-220-3-31 08n80c3 equivalent 08n80c3 q67040-s4632 transistor spp08n80c3	PDF
SPA08N80C3 Abstract: spa08n80 Contextual Info: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa08n80c3 pg-to220fp 08n80c3 spa08n80	PDF
08n50c3 Abstract: sp000216306 SPA08N50C3 SPI08N50C3 SPP08N50C3 Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated	Original	spp08n50c3 spi08n50c3 spa08n50c3 pg-to220fp +6pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31 08n50c3 sp000216306	PDF
Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated	Original	spp08n50c3 spi08n50c3 spa08n50c3 pg-to220fp +4pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31	PDF
08n50c3 Abstract: SPA08N50C3 PG-TO220-3-31 SPI08N50C3 SPP08N50C3 Q67040-S4567 Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262 PG-TO220 • Extreme dv/dt rated	Original	spp08n50c3 spi08n50c3 spa08n50c3 pg-to220-3-31 +6pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31 08n50c3 q67040-s4567	PDF
08n50c3 Abstract: SPI08N50C3 Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3-1 PG-TO220-3-1 • Extreme dv/dt rated	Original	spp08n50c3 spi08n50c3 spa08n50c3 p-to220-3-31 +5pg-to220-3-31 pg-to262-3-1 pg-to220-3-1 pg-to-220-3-31 08n50c3	PDF
Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220-3-31 PG-TO262-3 PG-TO220-3-1 • Extreme dv/dt rated	Original	spp08n50c3 spi08n50c3 spa08n50c3 p-to220-3-31 +4pg-to220-3-31 pg-to262-3 pg-to220-3-1 pg-to-220-3-31	PDF
08N50C3 Abstract: AN-TO220-3-31-01 SPA08N50C3 SPI08N50C3 SPP08N50C3 47 6v 08n50 application note AN-TO220-3-31-01 Q67040-S4567 Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Preliminary data Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO262-3-1	Original	spp08n50c3 spi08n50c3 spa08n50c3 p-to220-3-31 +9p-to262-3-1 p-to220-3-1 p-to-220-3-31 08n50c3 an-to220-3-31-01 47 6v 08n50 application note an-to220-3-31-01 q67040-s4567	PDF
Contextual Info: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa08n80c3 pg-to220fp 08n80c3	PDF
SPP08N80C3 Abstract: 08n80c3 Contextual Info: SPP08N80C3 SPA08N80C3 Final data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	spp08n80c3 spa08n80c3 p-to220-3-31 p-to220-3-1 +3q67040 s4436 08n80c3	PDF
Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A Feature • New revolutionary high voltage technology • Ultra low gate charge PG-TO220FP PG-TO262 • Periodic avalanche rated PG-TO220 • Extreme dv/dt rated	Original	spp08n50c3 spi08n50c3 spa08n50c3 pg-to220fp +4pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31	PDF
08N80C3 Abstract: SPA08N80C3 Contextual Info: SPA08N80C3 Preliminary data Cool MOS =Power Transistor COOLMOS Power Semiconductors Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 800 V •=Periodic avalanche rated RDS on 0.65 Ω • Extreme dv/dt rated	Original	spa08n80c3 p-to220-3-31 08n80c3 q67040-s4437	PDF

08n50c3 Abstract: 08n50 SPA08N50C3 SPI08N50C3 SPP08N50C3 Contextual Info: SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor Feature VDS @ Tjmax 560 V RDS on 0.6 Ω ID 7.6 A • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated	Original	spp08n50c3 spi08n50c3 spa08n50c3 pg-to220fp +6pg-to262 pg-to220 p-to220-3-31 pg-to-220-3-31 08n50c3 08n50	PDF
08N80C3 Abstract: spa08n Contextual Info: SPP08N80C3 SPA08N80C3 Preliminary data Cool MOS Power Transistor Feature Product Summary • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω 8 A • Ultra low gate charge • Periodic avalanche rated ID • Extreme dv/dt rated P-TO220-3-31	Original	spp08n80c3 spa08n80c3 p-to220-3-31 p-to220-3-1 +4q67040 s4436 08n80c3 spa08n	PDF
08N80C3 Abstract: Q67040-S4437 SPP08N80C3 08n80 Contextual Info: SPP08N80C3 SPA08N80C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology VDS 800 V RDS on 0.65 Ω ID 8 A • Ultra low gate charge • Periodic avalanche rated P-TO220-3-31 P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances	Original	spp08n80c3 spa08n80c3 p-to220-3-31 p-to-220-3-31 +5p-to220-3-1 q67040 08n80c3 q67040-s4437 08n80	PDF
08N80C3 Abstract: 08n80c 08N80 equivalent 08N80C3 SPA08N80C3 JESD22 PG-TO220-3 Page-10 C40W Contextual Info: SPA08N80C3 CoolMOSTM Power Transistor Product Summary Features • New revolutionary high voltage technology • Extreme dv/dt rated V DS 800 V R DS on max @ Tj = 25°C 0.65 Ω 45 nC Q g,typ • High peak current capability • Qualified according to JEDEC1) for target applications	Original	spa08n80c3 pg-to220fp 08n80c3 08n80c +608n80 equivalent 08n80c3 jesd22 pg-to220-3 page-10 c40w	PDF
STR-G6551 Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312 Contextual Info: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision	Original	2002-sep str-g6551 str-f6654 g6551 +7tda16822 str-f6653 strg6551 igbt cross reference ka5m0565r top224y equivalent bup 312	PDF
igbt welding machine scheme Abstract: ikw40n120h3 aircon l1 smd diode schottky code marking SJ transistor marking code 12W SOT-23 24V application with ice3ar0680jz induction cooker FAULT FINDING IPW65R041 IGW40N60H3 SPW55N80C3 Contextual Info: Power Management Selection Guide 2012 [ www.infineon.com/powermanagement ] [ www.infineon.com/PowerManagementICs ] We create Power Management We live Energy Efficiency Infineon, an innovation leader for Power Semiconductor and Energy Efficiency technologies is continually developing and	Original	igbt welding machine scheme ikw40n120h3 aircon l1 smd diode schottky code marking sj +6transistor marking code 12w sot-23 24v application with ice3ar0680jz induction cooker fault finding ipw65r041 igw40n60h3 spw55n80c3	PDF
3bs02 Abstract: 2bs01 08P06P TDA 16888 ICE2pcs02 tda16846 ICE3B1565J mosfet 18p06p TDA4605 ICE3B0365J Contextual Info: MOSFETs, PWM Control ICs, SMPS ICs, Gate Driver, PFC ICs, Silicon Carbide High Voltage Schottky Diodes February 2008 Power Management & Supply Selection Guide www.infineon.com/powermanagement Introduction I n f i n e o n ’ s P o w e r S e mi c o n d u c t o r p h i l o s o p h y is rather	Original	infineo866-95 b152-h8926-g2-x-7600 nb08-1069 3bs02 +92bs01 08p06p tda 16888 ice2pcs02 tda16846 ice3b1565j mosfet 18p06p tda4605 ice3b0365j	PDF
schematic diagram atx Power supply 500w Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455	Original	p462-nd p463-nd lng295lfcp2u lng395mftp5u +11us2011 schematic diagram atx power supply 500w pioneer pal 012a 1000w inverter pure sine wave schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 tle 9180 infineon smsc mec 1300 nu tbe schematic diagram inverter 2000w dk55 circuit diagram of luminous 600va ups	PDF
FSQ510 Equivalent Abstract: BTA12 6008 bta16 6008 ZIGBEE interface with AVR ATmega16 Precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 A564 transistor BSM25GP120 b2 Contextual Info: SEMICONDUCTORS MCU/MPU/DSP Atmel. . . . . . . . . 167, 168, 169, 170, 171, 172 Blackhawk. . . . . . . . . . . . . . . . . . . . . . . . . 173 Cyan . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 174 Cypress. . . . . . . . . . . . . . . 175, 176, 177, 178	Original	gp-20 fsq510 equivalent bta12 6008 bta16 6008 +7zigbee interface with avr atmega16 precision triac control thermostat thyristor t 558 f eupec gw 5819 diode transistor a564 a564 transistor bsm25gp120 b2	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 f155-6a f155-10a f165-15a +11f175-25a irfb4115 bty79 equivalent diode skn 21-04 marking code w04 sot-23 bbc 598 479 diode mw 137 600g tfk 401 s 673 vishay telefunken tfk transistor infineon transistor marking w31 jys marking transistor	PDF

SPA08N Search Results

SPA08N Datasheets (7)

SPA08N Price and Stock

Infineon Technologies AG SPA08N80C3

Infineon Technologies AG SPA08N80C3XKSA1

Infineon Technologies AG SPA08N50C3XKSA1

SPA08N Datasheets Context Search

08N80C3

08N80C3

08N80C3

SPA08N80C3

08n50c3

08n50c3

08n50c3

08N50C3

SPP08N80C3

08N80C3

08n50c3

08N80C3

08N80C3

08N80C3

STR-G6551

igbt welding machine scheme

3bs02

schematic diagram atx Power supply 500w

FSQ510 Equivalent

irfb4115