80N06 Search Results
80N06 Datasheets (8)
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| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
SLP80N06T
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Maplesemi | N-channel 60V 80A MOSFET with typical RDS(on) of 6.5 mΩ at VGS = 10V, designed for high-efficiency power management, load switching, and PWM applications. | Original | ||||
SLM80N06T
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Maplesemi | 60V N-Channel MOSFET with 80A continuous drain current, 6.1mΩ typical RDS(on) at VGS = 10V, low gate charge, and high switching performance in a DFN5x6 package. | Original | ||||
SLD80N06T
|
Maplesemi | N-Channel MOSFET with 60V drain-source voltage, 80A continuous drain current, 6.5mΩ typical RDS(on) at VGS=10V, TO-252 package, suitable for power management and load switching applications. | Original | ||||
JMTK80N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 80A N-channel enhancement mode power MOSFET in TO-252-3L package with RDS(on) less than 6.6 mΩ at VGS = 10V, featuring advanced trench technology for low gate charge and high efficiency in power management and load switching applications. | Original | ||||
SLB80N06T
|
Maplesemi | N-channel MOSFET, 60V, 80A continuous drain current, 6.5 mΩ typical RDS(on) at 10V VGS, TO-263 package, designed for high-efficiency power switching applications with low gate charge and fast switching performance. | Original | ||||
HKTD80N06
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Shenzhen Heketai Electronics Co Ltd | N-channel Power MOSFET with 60V drain-source voltage, 80A continuous drain current, 8mΩ maximum on-resistance at VGS=10V, available in TO-252 package. | Original | ||||
JMTK480N06A
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Jiangsu JieJie Microelectronics Co Ltd | 60V, 15A N-channel Enhancement Mode Power MOSFET in TO-252-3L package with RDS(ON) less than 56.9mΩ at VGS=10V, featuring advanced trench technology, low gate charge, and 100% UIS tested. | Original | ||||
JMTC80N06A
|
Jiangsu JieJie Microelectronics Co Ltd | N-channel Enhancement Mode Power MOSFET with 60V drain-source voltage, 80A continuous drain current, and RDS(on) less than 7mΩ at VGS = 10V, featuring advanced trench technology for high efficiency power management applications. | Original |
80N06 Price and Stock
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Infineon Technologies AG IPI80N06S208AKSA2Trans MOSFET N-CH 55V 80A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI80N06S208AKSA2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI80N06S208AKSA2 | Tube | 2,500 | 1 |
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IPI80N06S208AKSA2 | 10,300 | 1 |
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Renesas Electronics Corporation NP80N06PLG-E1-AYNCH POWER MOSFET 60V 80A 8.3MOHM D2PAK - Tape and Reel (Alt: NP80N06PLG-E1-AY) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NP80N06PLG-E1-AY | Tape & Reel | 800 |
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NP80N06PLG-E1-AY |
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Infineon Technologies AG IPB80N06S2L06ATMA2Trans MOSFET N-CH 55V 80A 3-Pin TO-263 T/R - Tape and Reel (Alt: IPB80N06S2L06ATMA2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S2L06ATMA2 | Tape & Reel | 12 Weeks | 1,000 |
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IPB80N06S2L06ATMA2 |
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IPB80N06S2L06ATMA2 | 1,000 |
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IPB80N06S2L06ATMA2 | 13 Weeks | 1,000 |
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Infineon Technologies AG IPI80N06S407AKSA2Trans MOSFET N-CH 60V 80A 3-Pin TO-262 Tube - Rail/Tube (Alt: IPI80N06S407AKSA2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPI80N06S407AKSA2 | Tube | 12 Weeks | 500 |
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IPI80N06S407AKSA2 |
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IPI80N06S407AKSA2 | 537,405 | 1 |
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IPI80N06S407AKSA2 | 248 | 1 |
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IPI80N06S407AKSA2 | 13 Weeks | 500 |
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Infineon Technologies AG IPB80N06S209ATMA2- Tape and Reel (Alt: IPB80N06S209ATMA2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB80N06S209ATMA2 | Tape & Reel | 12 Weeks | 1,000 |
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Buy Now | |||||
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IPB80N06S209ATMA2 | 744 |
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IPB80N06S209ATMA2 | Cut Tape | 1,000 | 1 |
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IPB80N06S209ATMA2 | 1,000 |
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IPB80N06S209ATMA2 | 13 Weeks | 1,000 |
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Get Quote | ||||||