SC06140 Search Results

Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened

Contextual Info: STN3NE06 N - CHANNEL 60V - 0.08CI - 3A - SOT-223 STripFET POWER MOSFET TYP E STN 3N E06 • . . . . V dss 60 V R d S oii Id < 0 .1 0 0 Q. 3 A TYPICAL RDS(on) = 0.08 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: SGS-THOMSON UJCTIfSiSffllKB STW16NA40 STH16NA40FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTORS PRELIMINARY DATA TYPE Id 16 A 10 A aa 400 V 400V C O CO 6 o V V . . . . . RDS on V dss STW16NA40 STH16NA40FI TYPICAL RDs(on) = 0.21 ft AVALANCHE RUGGED TECHNOLOGY

Contextual Info: STP7NB80 STP7NB80FP N - CHANNEL 800V - 1 .2£2 - 6.5A - TO-220/TO-220FP PowerMESH MOSFET TYPE STP7NB 80 STP7NB80FP • . . . . V dss R D S on Id 800 V 800 V < 1.5 n < 1.5 Q, 6.5 A 6.5 A TYPICAL RDS(on) = 1.2 £2 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED

Contextual Info: SGS-THOMSON [MOigœilLiera *® STP2NA50 STP2NA50FI N - CHANNEL ENHANCEMENT MODE _ POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V dss S TP2N A 50 STP2NA 50FI R d S oii 500 V 500 V < 4 a. < 4 0. Id 2 .8 A 2 A Cl • TYPICAL RüS(on) =3.25 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STP5NC50 STP5NC50FP N - CHANNEL 500V -1.3 Q. - 5.5A TO-220/TO-220FP _ PowerMESH MOSFET P R ELIM IN ARY DATA TYPE S TP5N C 50 STP5NC 50FP • . . . . V dss RDS on Id 500 V 500 V < 1 .5 Q. < 1 .5 Q. 5.5 A 5.5 A TYPICAL RDS(on) = 1.3

Contextual Info: S G S -T H O M S O N [M O ig œ ilL ie ra *® S T P 40 N 03 L -20 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR PRELIMINARY DATA TYP E V dss S T P 40N 03L-20 30 V R dS oii < 0.0 2 a . Id 40 A . TYPICAL RDs(on) = 0.016 £1

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

Contextual Info: STW7NB80 N - CHANNEL 800V - 1.6ß - 6.5A - TO-247 _ PowerMESH MOSFET PRELIMINARY DATA TYPE V dss STW7NB80 • . . . . 800 V R dS oii < 1.9 a Id 6.5 A TYPICAL R D S (on) = 1.6 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES

Contextual Info: STW9NA80 STH9NA80FI N - CHANNEL 800V - 0.85ÎÎ - 9.1 A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR TYPE S TW 9N A 80 S TH 9N A80FI • . . . . . . V dss R D S o n Id 800 V 800 V < 1 .o n < 1 .o n 9.1 A 5.9 A TYPICAL RDS(on) = 0.85 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STW 6NB100 N - CHANNEL 1000V - 2.3Î1 - 5.4A - TO-247 PowerMESH MOSFET TYPE V dss S T W 6 N B 1 00 • . . . . . 1000 v R d S oii Id < 2 .8 Q. 5 .4 A TYPICAL R D S (on) = 2.3 EXTREMELY HIGH dv/dt CAPABILITY ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED

Contextual Info: S G S - T H O M S O N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STP6NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STP6NA60FP • . . . . . . V dss R d S( oii ) Id 600 V < 1.2 Q. 3 .9 A TYPICAL RDS(on) = 1 £2 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STW55NE10 N - CHANNEL 100V - 0.021 i l - 55A - T0247 STripFET POWER MOSFET TYPE S T W 5 5N E 1 0 . . . . . V dss 100 V R d S o Id ii < 0 .0 2 7 Q. 55 A TYPICAL R D S (on) = 0.021 £2 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 °C

3l4 diode

Contextual Info: STD5NB30 N - CHANNEL 300V - 0.75 n - 5A - DPAK PowerMESH MOSFET TYPE STD5NB30 • . . . . . V dss R dS oii Id 300 V < 0.9 Q. 5 A TYPICAL RDS(on) = 0.75 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED

STH180N10F3-2

Abstract: sth180n10f3 STH180N10
Contextual Info: STH180N10F3-2 N-channel 100 V, 3.9 mΩ, 180 A, H²PAK-2 STripFET III Power MOSFET Features Order codes VDSS RDS on max. ID STH180N10F3-2 100 V 4.5 mΩ 180 A • Ultra low on-resistance ■ 100% avalanche tested TAB 2 Applications ■ 3 1 H2PAK-2 High current switching applications

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened

strh40p10

Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2

320N4F6

Abstract: STH320N4F6-2
Contextual Info: STH320N4F6-2, STH320N4F6-6 N-channel 40 V, 1.1 mΩ typ., 200 A, H²PAK-2, H²PAK-6 STripFET VI DeepGATE™ Power MOSFET Datasheet — production data Features Order codes STH320N4F6-2 STH320N4F6-6 VDS ID 1 RDS(on) max TAB 40 V 1.3 mΩ TAB 200 A 1. Current limited by package.

STP80N03L-06

Contextual Info: S G S -T H O M S O N [M O ig œ ilL ie ra *® STP 80 N 03 L -06 N - CHANNEL ENHANCEMENT MODE ’’ULTRA HIGH DENSITY” POWER MOS TRANSISTOR TENTATIVE DATA TYP E V dss RDS on Id STP80N 03L-06 30 V < 0.006 Q. 80 A (*) • . . . . . . . TYPICAL RDS(on) = 0.005 £1

Contextual Info: Eu SGS-THOMSON STW8NA60 STH8NA60FI ilLiOTMOlêS N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE V STW 8N A60 S TH 8N A60FI • . ■ > . . . dss 600 V 600 V R D S o n Id < 1 n < 1 fl 8 A 5 A TYPICAL RDS(on) = 0.92 Î2 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: S G S - T H O M S O N RfflDeiE!<s [l[L[ie,ü’[Ki@RDD S$ STP4NA60FP N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYP E STP4NA60FP V dss RDS(on) Id 600 V < 2 .2 Q. 2.7 A • TYPICAL RDS(on) = 1-85 ± 30V GATE TO SOURCE VOLTAGE RATING

Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite

transistor d 1557

Abstract: sc06140 TO-247 sc06140
Contextual Info: SGS-THOMSON M TO »« S TW 8 0 N06-10 N - CHANNEL ENHANCEMENT MODE "ULTRA HIGH DENSITY" POWER MOS TRANSISTOR PRELIMINARY DATA . • . . . . . . TYP E V dss RDS on Id STW 80N06-1 0 60 V < 0.010 Î2 80 A a TYPICAL R d s(oh ) = 0.0085 AVALANCHE RUGGED TECHNOLOGY