STN3NE06 Search Results

Contextual Info: STN3NE06 N - CHANNEL 60V - 0.08CI - 3A - SOT-223 STripFET POWER MOSFET TYP E STN 3N E06 • . . . . V dss 60 V R d S oii Id < 0 .1 0 0 Q. 3 A TYPICAL RDS(on) = 0.08 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED

Contextual Info: STN3NE06L N - CHANNEL 60V - 0.10 £2 - 3A - SOT-223 _ STripFET POWER MOSFET PRELIMINARY DATA TYPE STN 3N E06L V dss R d S oii Id 60 V < 0 .1 2 0 a 3 A = • TYPICAL RDS(on) 0.10 . EXCEPTIONAL dv/dt CAPABILITY . AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

N3NE06L

Abstract: N3NE n3ne06 STN3NE06L WO-260
Contextual Info: STN3NE06L  N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE ST N3NE06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.120 Ω 3 A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY

ste30na50

Abstract: STP3N60FI STE45N50 STHV82 stk2n50 ste24n90 STB55N06 ste38na50 STP55NE06FP STB40N03L-20
Contextual Info: SOT-223 VDSS RDS on max (V) (Ω) 30 0.05 0.06 0.12 0.12 0.12 0.27 0.45 1.50 20.0 60 100 200 800 Type STN4NE03L STN4NE03 STN3NE06 STN3NE06L STN3NE06L STN2N10 STN2NE10L ✠ STN1N20 STN1NB80 ✠ ID(cont) DEVICES (A) REPLACED 4.0 4.0 3.0 3.0 3.0 2.0 2.0 1.0

STN3NE06

Abstract: P008B DIODE
Contextual Info: STN3NE06 N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN3NE06 60 V < 0.100 Ω 3A TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED APPLICATION ORIENTED

P008B

Abstract: STN3NE06 SGS-Thomson mosfet
Contextual Info: STN3NE06 N - CHANNEL ENHANCEMENT MODE "EXTREMELY HIGH DENSITY" POWER MOSFET TARGET DATA TYPE V DSS R DS on ID STN3NE06 60 V < 0.12 Ω 3A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

AP101

Contextual Info: STN3NE06L N - CHANNEL 60V - 0 .08 a - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN3NE06L . . . . . Voss R D S o n Id 60 V < 0 .1 0 0 Î2 3 A = n TYPICAL R d s (oh) 0.08 EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 1 0 0 % AVALANCHE TESTED

3ne06

Contextual Info: STN3NE06 N - CHANNEL 60V - 0.08Î2 - 3A - SOT-223 STripFET POWER MOSFET TYPE V dss R D S o n Id STN 3N E06 60 V < 0 .1 0 0 Q 3 A . . . . . TYPICAL Fbs(on) = 0.08 Ü EXCEPTIONALdv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

N3NE06

Abstract: P008B SGS-Thomson e4 sot223 SGS-Thomson mosfet k 2638
Contextual Info: STN3NE06 N - CHANNEL ENHANCEMENT MODE ”EXTREMELY HIGH DENSITY” POWER MOSFET TARGET DATA TYPE V DSS R DS on ID ST N3NE06 60 V < 0.13 Ω 3 A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED

N3NE06

Abstract: P008B DIODE STN3NE06 c 1181
Contextual Info: STN3NE06  N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID ST N3NE06 60 V < 0.100 Ω 3 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

STN3NE06

Contextual Info: STN3NE06 N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID STN3NE06 60 V < 0.100 Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

STN3NE06L

Contextual Info: STN3NE06L N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN3NE06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.120 Ω 3A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

STN3NE06L

Abstract: P Channel Low Gate Charge transistor di 960
Contextual Info: STN3NE06L N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE STN3NE06L V DSS R DS on ID 60 V < 0.120 Ω 3A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

IRF540 complementary

Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3

YTA630

Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509

irf840 power supply

Abstract: STP3020L STP38NF06L STP6NB90FP STe30na50 STP4NB90 STN1NB80 IRF740 sT55n STD1NB60
Contextual Info: April 2000 TO-220 VDSS RDS on max (V) (Ω) -60 30 34 50 55 60 75 80 100 150 200 250 300 Type ID(cont) DEVICES REPLACED (A) REMARKS 0.2 0.004 0.006 0.0065 0.009 0.01 0.01 STP12PF06 STP80NF03L-04 STP80NE03L-06 STP90NF03L STP70NF3LL STP70NF03L STP60NF03L 12

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

Complementary MOSFETs buz11

Abstract: IRF644 STP90NF03L stp3nc90zfp IRF540 complementary STP6NC60FP Application Notes STP55NE06FP STY15NA100 STP60NE06-16 stp7nb60fp
Contextual Info: POWER MOSFETs IGBTs Selection Guide P T Y U T O F P H E O U Y I O U R E O P L E C N S W H O O N T R O L Y S T E M S IG B Ts IGB Ts Ts IG BTs IG B FEATURE Logic Level Fully Clamped Low Drop Fast Switching Fast Switching + Freewheeling Diode Short Circuit Proof

VBG15NB37

Abstract: STP3020L IRF540 application STP24NF10 BUZ10 STGP10NB60S stp80* equivalent smart ignition igbt VBG15NB37 BUZ11 STD38NF03L
Contextual Info: November ’99 TO-220 Device STP12PF06 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP60NF03L STP3015L STP40NE03L-20 STP40NF03L STP3020L STP30NE03L STP22NE03L STP55NF03L STP80NS04Z STP60NS04Z IRFZ40 BUZ11 BUZ11A BUZ10 BUZ71 STP80NF55-06 STP80NF55L-06

std2n52

Abstract: stp3n60 STE38NA50 *D2N52 FTP5021-0 TO220 STP60NE06-16 STD2NB60 STP3N60FI STD12NE06 stp7nb20
Contextual Info: TRANSISTORS POWER MOSFETS POWER MOS 2 1 2 3 3 1 ISOTOPTM DPAK D2PAK IPAK SOT-82 SOT-223 1 TO-220 ISOWATT 220TM / TO-220FP Fully isolated MAX220TM ISOWATT 218TM (Fully isolated) TO-247 MAX247TM Internal schematic diagrams POWER MOS Sales Type STB80NE03L-06

STP3N60FI

Abstract: IRF540 complementary IRF640 complementary ste38na50 STE45N50 IRF630 complementary STP6NA80FP STD1NB60 IRF730 complementary ste24n90
Contextual Info: May ‘99 TO-220 VDSS RDS on max (V) (Ω) 30 0.004 0.006 0.01 0.012 0.0155 0.02 0.022 0.022 0.045 0.05 0.008 0.015 0.028 0.04 0.055 0.07 0.1 0.006 0.006 0.01 STP80NF03L-04 STP80NE03L-06 STP60NE03L-10 STP60NE03L-12 STP3015L STP40NE03L-20 STP40NF03L ✠ STP3020L

STripFET

Abstract: k12n06 STP50N05 k12n06l MTP3055E Si4412DY STD17N06L Si9410DY Si9936DY STP55N06L
Contextual Info: STRIPFET AN UPDATE OF OUR “NE” SERIES LOW VOLTAGE POWER MOSFETs The continuous downward price pressure has forced all suppliers to optimize silicon and implement consequent product rationalization. This trend is particularly true for low voltage Power MOSFETs, where