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    STMicroelectronics STN3NE06

    Trans MOSFET N-CH 60V 3A 4-Pin(3+Tab) SOT-223
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    Bristol Electronics STN3NE06 1,000
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    Chip 1 Exchange STN3NE06 11,015
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    Others STN3NE06LSA

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    Chip 1 Exchange STN3NE06LSA 2,093
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    Others STN3NE06

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    Chip 1 Exchange STN3NE06 1,025
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    N3NE06 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    N3NE06L

    Abstract: N3NE n3ne06 STN3NE06L WO-260
    Contextual Info: N3NE06L  N - CHANNEL 60V - 0.10 Ω - 3A - SOT-223 STripFET POWER MOSFET PRELIMINARY DATA TYPE ST N3NE06L • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.120 Ω 3 A TYPICAL RDS(on) = 0.10 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY


    Original     		stn3ne06lot-223n3ne06ln3ne+2n3ne06wo-260 PDF

    N3NE06

    Abstract: P008B SGS-Thomson e4 sot223 SGS-Thomson mosfet k 2638
    Contextual Info: N3NE06 N - CHANNEL ENHANCEMENT MODE ”EXTREMELY HIGH DENSITY” POWER MOSFET TARGET DATA TYPE V DSS R DS on ID ST N3NE06 60 V < 0.13 Ω 3 A • ■ ■ ■ TYPICAL RDS(on) = 0.09 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED


    Original     		stn3ne06n3ne06p008bsgs-thomson+3e4 sot223sgs-thomson mosfetk 2638 PDF

    N3NE06

    Abstract: P008B DIODE STN3NE06 c 1181
    Contextual Info: N3NE06  N - CHANNEL 60V - 0.08Ω - 3A - SOT-223 STripFET POWER MOSFET TYPE V DSS R DS on ID ST N3NE06 60 V < 0.100 Ω 3 A • ■ ■ ■ ■ TYPICAL RDS(on) = 0.08 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100 % AVALANCHE TESTED


    Original     		stn3ne06ot-223n3ne06p008b diode+1c 1181 PDF