STRIPFET Search Results

D150*h02l

Abstract: D150N d150nh02 STD150 STD150NH02L-1 DPAK 0181G D150Nh02l
Contextual Info: STD150NH02L-1 STD150NH02L N-channel 24V - 0.003Ω - 150A - ClipPAK - IPAK STripFET™ IlI Power MOSFET General features Type VDSSS RDS on ID STD150NH02L STD150NH02L-1 24V 24V <0.0035Ω <0.0035Ω 150A 150A ) s ( t 3 3 1 • RDS(on) * Qg industry’s benchmark

STD6NF10

Contextual Info: STD6NF10 N-CHANNEL 100V - 0.22 Ω - 6A IPAK/DPAK LOW GATE CHARGE STripFET POWER MOSFET TYPE STD6NF10 • ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.250 Ω 6A TYPICAL RDS(on) = 0.22 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE

STS6NF20V

Contextual Info: STS6NF20V N-CHANNEL 20V - 0.030 Ω - 6A SO-8 2.7V-DRIVE STripFET II POWER MOSFET • ■ ■ ■ TYPE VDSS RDS on ID STS6NF20V 20 V < 0.040 Ω ( @ 4.5 V ) < 0.045 Ω ( @ 2.7 V ) 6A TYPICAL RDS(on) = 0.030 Ω @ 4.5 V TYPICAL RDS(on) = 0.037 Ω @ 2.7 V

STB40NF03L

Contextual Info: STB40NF03L N-CHANNEL 30V - 0.020Ω - 40A D2PAK STripFET POWER MOSFET TYPE STB40NF03L • ■ VDSS RDS on ID 30 V <0.022 Ω 40 A TYPICAL RDS(on) = 0.020 Ω LOW THRESHOLD DRIVE 3 DESCRIPTION This Power Mosfet is the latest development of STMicroelectronics unique “Single Feature

STL28NF3LL

Contextual Info: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A • ■ ■ TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE

Contextual Info: STI17NF25 - STD17NF25 STF17NF25 - STP17NF25 N-channel 250V - 0.14Ω - 17A - TO-220/FP - DPAK - I2PAK Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID PTOT STD17NF25 250V < 0.165Ω 17A 90W STI17NF25 250V < 0.165Ω 17A 90W

Contextual Info: STD100N3LF3 STU100N3LF3 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features RDS on ID Type VDSSS STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W STU100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W Pw 3 3 2 1 1 1. Current limited by package

STB85NF55

Abstract: STP85NF55 40AVDD
Contextual Info: STB85NF55 STP85NF55 N-CHANNEL 55V - 0.0062 Ω - 80A D2PAK/TO-220 STripFET II POWER MOSFET • ■ TYPE VDSS RDS on ID STB85NF55 STP85NF55 55 V 55 V <0.008 Ω <0.008 Ω 80 A 80 A TYPICAL RDS(on) = 0.0062 Ω FOR THROUGH-HOLE VERSION CONTACT SALES OFFICE

STV60NE06-16

Contextual Info: STV60NE06-16 N - CHANNEL 60V - 0.013Ω - 60A PowerSO-10 STripFET POWER MOSFET PRELIMINARY DATA TYPE STV60NE06-16 • ■ ■ ■ ■ V DSS R DS on ID 60 V < 0.016 Ω 60 A TYPICAL RDS(on) = 0.013 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED

STD5NE10

Contextual Info: STD5NE10 N - CHANNEL 100V - 0.32 Ω - 5A TO-251/TO-252 STripFET POWER MOSFET TYPE STD5NE10 • ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.4 Ω 5A TYPICAL RDS(on) = 0.32 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE TESTED 100% AVALANCHE TESTED APPLICATION ORIENTED

STD5NE10L

Contextual Info: STD5NE10L  N - CHANNEL 100V - 0.3 Ω - 5A - DPAK/IPAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STD5NE10L • ■ ■ ■ ■ ■ V DSS R DS on ID 100 V < 0.4 Ω 5 A TYPICAL RDS(on) = 0.3 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY

STB45NF06

Contextual Info: STB45NF06 N-CHANNEL 60V - 0.022Ω - 38A D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB45NF06 • ■ VDSS RDS on ID 60V <0.028Ω 38A TYPICAL RDS(on) = 0.022Ω EXCEPTIONAL dv/dt CAPABILITY DESCRIPTION This Power Mosfet is the latest development of

STB60NE06L-16

Contextual Info: STB60NE06L-16 N-CHANNEL 60V - 0.014 Ω - 60A D2PAK STripFET II POWER MOSFET TYPE STB60NE06L-16 • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 60 V <0.016 Ω 60 A TYPICAL RDS(on) = 0.014 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY

STB80PF55

Contextual Info: STB80PF55 P-CHANNEL 55V - 0.016 Ω - 80A D2PAK STripFET II POWER MOSFET PRELIMINARY DATA • ■ ■ ■ TYPE VDSS RDS on ID STB80PF55 55 V < 0.018 Ω 80 A TYPICAL RDS(on) = 0.016 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED APPLICATION ORIENTED

STD40NF03L

Contextual Info: STD40NF03L N-CHANNEL 30V - 0.0095 Ω - 40A DPAK LOW GATE CHARGE STripFET II POWER MOSFET PRELIMINARY DATA TYPE STD40NF03L • ■ ■ ■ ■ VDSS RDS on ID 30 V <0.012Ω 40 A TYPICAL RDS(on) = 0.0095 Ω TYPICAL Qg = 35 nC @ 10V OPTIMAL RDS(on) x Qg TRADE-OFF

STB22NE03L

Contextual Info: STB22NE03L N-CHANNEL 30V - 0.034 Ω - 22A D2PAK STripFET POWER MOSFET PRELIMINARY DATA TYPE STB22NE03L • ■ ■ ■ ■ ■ VDSS RDS on ID 30 V <0.05 Ω 24 A TYPICAL RDS(on) = 0.034 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE AT 100 oC

STD16NE10L

Contextual Info: STD16NE10L N-CHANNEL 100V - 0.07 Ω - 16A DPAK STripFET POWER MOSFET TYPE STD16NE10L • ■ ■ ■ ■ ■ ■ VDSS RDS on ID 100 V <0.10 Ω 16 A TYPICAL RDS(on) = 0.07 Ω AVALANCHE RUGGED TECHNOLOGY LOW GATE CHARGE HIGH CURRENT CAPABILITY 175 oC OPERATING TEMPERATURE

STW80NF55-06

Contextual Info: STW80NF55-06 N-CHANNEL 55V - 0.005Ω - 80A TO-247 STripFET II POWER MOSFET PRELIMINARY DATA TYPE STW80NF55-06 • ■ ■ VDSS RDS on ID 55 V < 0.0065 Ω 80 A TYPICAL RDS(on) = 0.005Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED 3 2 1 DESCRIPTION

STP14NF10FP

Abstract: STB14NF10 STP14NF10
Contextual Info: STB14NF10 STP14NF10 STP14NF10FP N-CHANNEL 100V - 0.115 Ω - 15A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET II POWER MOSFET TYPE STB14NF10 STP14NF10 STP14NF10FP • ■ ■ ■ ■ VDSS RDS on ID 100 V 100 V 100 V <0.13 Ω <0.13 Ω <0.13 Ω 15 A

P008B DIODE

Abstract: STN3NF06L
Contextual Info: STN3NF06L N-CHANNEL 60V - 0.07Ω - 4A SOT-223 STripFET II POWER MOSFET • ■ ■ ■ ■ TYPE VDSS RDS on ID STN3NF06L 60 V < 0.1 Ω 4A TYPICAL RDS(on) = 0.07 Ω EXCEPTIONAL dv/dt CAPABILITY AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE

p20n20

Abstract: F20N20 D20N20 STD20N20T4 STD20N20 STF20N20 STP20N20 STripFET P20-N F20N
Contextual Info: STP20N20 STF20N20 - STD20N20 N-CHANNEL 200V - 0.10Ω - 18A TO-220/TO-220FP/DPAK LOW GATE CHARGE STripFET II MOSFET DATA BRIEF Figure 1: Package Table 1: General Features TYPE STD20N20 STF20N20 STP20N20 • ■ ■ ■ VDSS RDS on Id PW 200 V 200 V 200 V

Contextual Info: STP90N6F6 N-channel 60 V, 0.0059 Ω typ., 84 A STripFET VI DeepGATE™ Power MOSFET in a TO-220 package Datasheet - production data Features Order code VDS RDS on max. ID PTOT STP90N6F6 60 V 0.0068 Ω 84 A 136 W •     Figure 1: Internal schematic diagram

Contextual Info: STT5N2VH5 N-channel 20 V, 0.025 Ω typ., 5 A STripFET V Power MOSFET in a SOT23-6L package Datasheet — production data Features Order code VDS RDS on max ID PTOT STT5N2VH5 20 V 0.04 Ω (VGS=2.5 V) 5 A 4 5 6 1.6 W • Very low profile package 3 2 • Conduction losses reduced

Contextual Info: STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production data Features 1 4 1 Order code VDS RDS on max. ID STL13DP10F6 100 V 0.18 Ω 3.3 A • RDS(on) * Qg industry benchmark