BUZ11 Search Results

BUZ11A

Abstract: BUZ11
Contextual Info: H BUZ11A SiSconix in c o r p o r a te d N-Channel Enhancement Mode Transistor TO -220A B TOP VIEW o PRODUCT SUMMARY V BR DSS r DS(ON) •d (V) <«) (A) 50 0.060 25 1 GATE 2 DRAIN (Connected to TAB) 3 SO URCE , 2 3 ABSOLUTE MAXIMUM RATINGS (Tc = 25°C Unless Otherwise Noted)

P50N05

Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Contextual Info: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2

BUZ11

Contextual Info: Standard Power MOSFETs BUZ11 F ile N u m b e r 2253 N-Channel Enhancement-Mode Power Field-Effect Transistors 30 A, 50 V rosiom = 0.04 n N-CHANNEL ENHANCEMENT MODE Features: • SO-A is pow er-clissipation lim ite d m N anosecond sw itching speeds Linear transter characteristics

Contextual Info: ¿57 B U Z11 B U Z 1 1 FI S G S -T H O M S O N ¡U È T O « N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYP E V dss BUZ11 BUZ11FI 50 V 50 V RDS on < 0.04 < 0.04 a a Id A 21 A 36 • TYPICAL RDS(on) = 0.03 Q . . AVALANCHE RUGGED TECHNOLOGY ■ 100% AVALANCHE TESTED

Contextual Info: BUZ11 N - CHANNEL 50V - 0.03ft - 30A -TO-220 STripFET POWER MOSFET TYPE BUZ11 V R dss 50 V d Id S o ii < 0 .0 4 Q. 30 A . • TYPICAL RDS(on) = 0.03 AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . HIGH CURRENT CAPABILITY . 175°C OPERATING TEMPERATURE

BUZ11A

Contextual Info: BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V < 0.055 Ω 27 A TYPICAL RDS(on) = 0.048 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW GATE CHARGE

BUZ11 motorola

Abstract: BUZ11 buz11a
Contextual Info: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA BUZ11 BUZ11A P o w er Field E ffe c t T ran sisto r N -C h ann el Enh an cem en t-M ode S ilic o n G ate T M O S These TM O S III Pow er FETs are designed fo r lo w voltage, high speed, lo w loss p o w e r s w itc h in g a pp licatio n s such as

BUZ111SL

Abstract: Q67040-S4003-A2 SPP80N05
Contextual Info: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

BUZ11

Abstract: TB334
Contextual Info: BUZ11 Data Sheet June 1999 30A, 50V, 0.040 Ohm, N-Channel Power MOSFET Features This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high power bipolar switching

buz11 application note

Abstract: Z11B BUZ11F
Contextual Info: SGS-THOMSON B U Z 11 B U Z 1 1 FI * 7 # l* IE » [ i( g T O [ * § N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS • • • • TYPE V DSS ^DS(on BUZ11 BUZ11FI 50 V 50 V 0.04 Q 0.04 Q •d • 30 A 20 A HIGH SPEED SWITCHING VERY LOW ON-LOSSES LOW DRIVE ENERGY FOR EASY DRIVE

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

buz 11 bv

Contextual Info: BUZ11 23 HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Features Package T 0 -2 2 0 A B • 30 A , 50 V T O P V IE W • rD S on = 0 .0 4 n • S O A is P ow er-D issip atio n Lim ited DRAIN (FLANGE) • N anosecond S w itching S peeds

SPP80N05L

Abstract: BUZ111SL Q67040-S4003-A2
Contextual Info: BUZ111SL SPP80N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

buz11

Abstract: buz11 motor control BUZ11 avalanche GC35620 airbag
Contextual Info: rz 7 SCS-THOMSON Ä 7# RKMilLifg «! BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI I V dss RüS on Id 50 V 50 V 0.04 Q 0.04 n 36 A 20 A • . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

buz11 equivalent

Abstract: BUZ11FI BUZ11 BUZ11 in electronic pulse schematic
Contextual Info: BUZ11 BUZ11FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 50 V 50 V < 0.04 Ω < 0.04 Ω 36 A 21 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

BUZ11S2FI

Abstract: BUZ11S2 CT55
Contextual Info: • o o a 'ib b o ? T - Z ^ W B U Z11S2 B U Z 1 1 S 2 FI S G S -T H O M S O N IŒ g ïÎ[]« Q O (g S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS S 3QE G S-THOMSON TYPE Vqss BUZ11S2 BUZ11S2FI 60 V 60 V ^DS(on 0.04 fi 0.04 fi D 'd■ 30 A 20 A • VE R Y LOW ON-LOSSES

BUZ11 motorola

Contextual Info: M OTOROLA SEMICONDUCTOR TECHNICAL DATA BUZ11 Power Field Effect Transistor N-Channel Enhancement-Mode Silicon Gate This TMOS III Power FET is designed for low voltage, high speed, low loss power switching applications such as switching regulators, converters, solenoid and relay drivers.

Contextual Info: SGS-THOMSON œ y [ E J O T Q BUZ11 BUZ11FI * S N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11 BUZ11FI V dss 50 V 50 V R dS(oii Id 0.04 Li 0.04 LI 36 A 20 A . . . . . . AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANC HE TESTED REPETITIVE AVALANC HE DATA AT 100°C

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

BUZ11

Abstract: buz11 equivalent BUZ11 in electronic pulse schematic datecode G1
Contextual Info: BUZ11  N - CHANNEL 50V - 0.03Ω - 30A -TO-220 STripFET POWER MOSFET T YPE BUZ11 • ■ ■ ■ ■ V DSS R DS o n ID 50 V < 0.04 Ω 30 A TYPICAL RDS(on) = 0.03 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED HIGH CURRENT CAPABILITY 175oC OPERATING TEMPERATURE

irf540n irf640

Abstract: IRF630 complementary IRF840 complementary irf630 irf640 IRF730 complementary irfp460 complementary MOSFET IRF540n complementary Complementary MOSFETs buz11 IRF9540 complementary Irfp250 irfp460
Contextual Info: MOSFET Selection Trees Power MOSFET Products N-CHANNEL MOSFETs N-CHANNEL STANDARD GATE MOSFETs BUZ11 BUZ71 BUZ71A BUZ72A HRF3205 HRF3205S HRFZ44N HUF75307D3 HUF75307D3S HUF75307P3 HUF75307T3ST HUF75309D3 HUF75309D3S HUF75309P3 HUF75309T3ST HUF75321D3 HUF75321D3S

BUZ11

Abstract: BUZ11FI buz11 1d BUZ11F 2M236 C3621 BUZ11 avalanche
Contextual Info: = 7 SGS-THOMSON kT # BUZ11 B U Z 1 1 FI RjlOICœiilLKB'f IBOMDei N - C HANNEL EN H A N C EM EN T MODE PO W ER MOS TR A N SISTO R S TYPE BU Z11 BU Z11FI • . . . . . . V dss R DS on Id 50 V 50 V < 0 .0 4 Q. < 0 .0 4 Q. 36 A 21 A TY P IC A L R D S (on) = 0.03

c5353

Abstract: Z11A
Contextual Info: SGS-THOMSON IDOS BUZ11A N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ11A . . . . . . V dss R dS{oi1 Id 50 V 0.055 a 27 A AVALANC HE RUG G EDNESS TECHNO LOG Y 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C LOW GATE CHARGE HIGH CURR ENT CAPABILITY

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI