IRF722 Search Results

IRF722

Abstract: IRF723
Contextual Info: [P3MÌfiì°[ ffiQ)§> FUT IRF722,723 2.5 AMPERES 400, 350 VOLTS Rd S ON) = 2.5 n FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged­

IRF7220

Contextual Info: PD- 91850C IRF7220 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -14V RDS on = 0.012Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier

IRF7220

Contextual Info: PD- 91850B IRF7220 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D 1 8 S 2 7 D S 3 6 D 4 5 D S G VDSS = -14V RDS on = 0.012W T o p V ie w Description These P-Channel MOSFETs from International Rectifier

IRF722

Abstract: IRF720 IRF7221
Contextual Info: iH A R R is IRF720, IRF721, IRF722, IRF723 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8 A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF7220GPBF

Abstract: ns 4150 da
Contextual Info: PD -96258 IRF7220GPbF HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free Halogen-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -14V RDS on = 0.012Ω Top View Description These P-Channel MOSFETs from International

IRF722P

Abstract: IRF732P SGSP3055 IRF730P 1rfp450 IRF510 SGSP312 IRF540FI irf522p MTP20N10
Contextual Info: CROSS REFERENCE SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI 2SK312 2SK313

Contextual Info: PD- 91850C IRF7220 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -14V RDS on = 0.012Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier

Contextual Info: IRF720, IRF721, IRF722, IRF723 h a r r is SEMIC0NDUCT0R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 2.8A and 3.3A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

TP8N10

Abstract: th15n20 TH7N50 TP4N10 TP10N05 IRFP350FI TP5N35 tp5n40 TP4N45 TP3N40
Contextual Info: CROSS REFERENCE INDUSTRY STANDARD SGS-THOMSON NEAREST PAGE INDUSTRY STANDARD SGS-THOMSON 2SK295 2SK296 2SK308 2SK310 2SK311 SGSP351 IRF723 IRF142 IRF722 IRF833 499 307 261 307 331 BUZ11A BUZ11FI BUZ11P BUZ11S2 BUZ11S2FI BUZ11A BUZ11FI BUZ11FI BUZ11S2 BUZ11S2FI

P3N40

Abstract: irf720
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Power Field Effect Transistor IRF720 IRF722 N-Channel Enhancement-Mode Silicon Gate TMOS These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid

IRF540

Abstract: T0-220
Contextual Info: SEMELAB pic SELECTOR GUIDE MOS PRODUCTS June 1998 T ype N o Technology Polarity Package VDSS RDSS on 10 Pd IRF452 IRF453 IRF460 IRF520 IRF521 IRF522 IRF523 IRF530 IRF531 IRF532 IRF533 IRF540 IRF541 IRF542 IRF543 IRF620 IRF621 IRF622 IRF623 IRF720 IRF721 IRF722

IRF7220

Contextual Info: PD- 91850C IRF7220 HEXFET Power MOSFET l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -14V RDS on = 0.012Ω T op V ie w Description These P-Channel MOSFETs from International Rectifier

Contextual Info: PD-91850C International IOR Rectifier IRF7220 HEXFET Power MOSFET • • • • Ultra Low O n-R esistance P-Channel M O SFET Surface Mount A vailable in Tape & Reel V dss = -14V R ü S o n = 0.0120 . Description T h e s e P -C h a n n e l M O S F E T s from International Rectifier

IRF720

Abstract: 1RF721 IRF723 t11g IRF721 IRF722
Contextual Info: 01 3875081 G E SOLID STATE D E ^ 3fl7SGûl ' 0 1E 18364 D D i a3bM 3 ~ T D\ T-39-11 Standard Power M O SFET s IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors

EIA-541

Abstract: IRF7101
Contextual Info: IRF7220PbF Electrical Characteristics @ TJ = 25°C unless otherwise specified ∆V(BR)DSS/∆TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) gfs Gate Threshold Voltage

Contextual Info: PD - 95172 IRF7220PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free S S S G A D 1 8 2 7 D 3 6 D 4 5 D VDSS = -14V RDS on = 0.012Ω Top View Description These P-Channel MOSFETs from International Rectifier

irf630 irf640

Abstract: MTP8N18 MTP4N18 MTP4N20 MOTOROLA IRF630 MTP5n18 MTP8N20 IRF710 IRF712 IRF720
Contextual Info: POWER TRANSISTORS — TMOS PLASTIC continued Plastic TMOS Power MOSFETs — TO-220AB (continued) CASE 221A-02 (Ohms) Max (Amp) 400 5 0.8 1 Device IRF712 1.3 20 2 50 1.5 20 MTP2N40 3.6 0.8 IRF710 3.3 1.5 MTP3N40 2.5 1.8 1.5 75 IRF722 2.5 40 IRF720 3 MTP4N40

IRF720

Abstract: IRF722 BRF721 IRF721 IRF723
Contextual Info: -Standard Power MOSFETs IRF720, IRF721, IRF722, IRF723 File Number 1579 Power MOS Field-Effect Transistors N-CHANNEL ENHANCEMENT MODE N-Channel Enhancement-Mode Power Field-Effect Transistors 2.5A and 3.0A, 350V-400V rDs on = 1.8 0 and 2.5 O F e a tu re s:

IRF720R

Abstract: IRF722R IRF723R IRF721R
Contextual Info: Rugged Power MOSFETs File N u m b er IRF720R, IRF721R IRF722R, IRF723R 1991 Avalanche Energy Rated N-Channel Power MOSFETs 2.5A and 3.0A, 350V-400V rDs on = 1.80 and 2.5fi Features: • Single pulse avalanche energy rated

IRF720

Abstract: IRF722
Contextual Info: IRF720, IRF721, IRF722, IRF723 S E M I C O N D U C T O R 2.8A and 3.3A, 350V and 400V, 1.8 and 2.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 2.8A and 3.3A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IR P-Channel mosfet

Abstract: EIA-541 IRF7101
Contextual Info: PD - 95172 IRF7220PbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D S 1 8 S 2 7 D S 3 6 D G 4 5 D VDSS = -14V RDS on = 0.012Ω Top View Description These P-Channel MOSFETs from International Rectifier

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

1RF321

Abstract: IRF322 IRF420 IRF422 IRF430 IRF432 IRF440 IRF442 IRF450 IRF452
Contextual Info: !R Selector Guide ] MOSPOWER Selector Guide B Siliconix N-Channel MOSPOWER Device u TO-3 Breakdown Voltage Volts 500 500 500 500 500 500 500 500 500 500 500 450 450 450 450 450 450 450 450 450 450 450 400 400 400 400 400 400 400 400 400 400 400 350 350 350

IRF740 smd

Abstract: tsd4m350v TSD4M250V SGSP363 irf740 mosfet IRF540 SGSP461 tsd4m250 IRF823 SGS100MA010D1
Contextual Info: ^ 7# SGS-THOMSON AUTOMOTIVE POWER TRANSISTORS MOSFET TRANSISTORS FOR AUTOMOTIVE APPLICATIONS Continued V(BR) DSS (V) r DS (on) max (Q]l 80 80 80 80 80 80 80 80 80 80 80 80 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 0.36