D86DL2
Abstract: IRF130 CPD75
Contextual Info: IRF130,131 P86DL2,K2 [jSSMlMiCS FEF RELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. 14.0 AMPERES
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SV160
Contextual Info: Philips Semiconductors Product specification TrenchMOS transistor Logic level FET GENERAL DESCRIPTION N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ‘trench’ technology
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buk9618-55gat140-id/100sv160 |
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transistor t04 76
Abstract: GV 475 diode transistor T04 NDB6060 004027S
Contextual Info: Na t io n a I Sem iconductor~ M arch 19 96 N DP6060/ NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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ndp6060/ndb6060025ftb50113g0dmq27h+6bs01130004027stransistor t04 76gv 475 diodetransistor t04ndb6060
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IRFP252
Abstract: IRFP253
Contextual Info: P@«Wn^=lMiS@ FIT IRFP252,253 25 AMPERES 200,150 VOLTS r d s ( o n = 0.12 n FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged
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d80an2
Abstract: D80AM2
Contextual Info: D80AM2.N2 FIELD EFFECT POWER TRANSISTOR This series of N-Channel Enhancement-mode Power MOSFETs utilizes GE’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. 0.32 AMPERES 150, 200 VOLTS RDS i ON = 5.0 n
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IRFP150
Abstract: D88FL2 DM160
Contextual Info: [ F € M I ^ ° [ M Ì S F U IRFP150,151 D88FL2.K2 F FIELD EFFECT POWER TRANSISTOR 40 AMPERES 100, 60 VOLTS ROSIEN - 0-055 n This series of N -C h a n n e l E n h a n c e m e n t-m o d e P ow er MOSFETs utilizes G E ’s advanced Power D M O S technology
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LD 1106 BS
Abstract: NDS8426
Contextual Info: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.
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