NDS8426 Search Results

NDS8426A

Abstract: DS1015
Contextual Info: January 1998 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

1A98

Abstract: NDS8426 ISS 99 diode
Contextual Info: N July 1996 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

Contextual Info: FAIRCHILD SEM IC ONDUCTO R J a n u a ry1998 tm NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

CBVK741B019

Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8426
Contextual Info: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

CBVK741B019

Abstract: F011 F63TNR F852 FDS9953A L86Z NDS8426A
Contextual Info: January 1998 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: July 1996 N NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

NDS8426A

Contextual Info: January 1998 FAIRCHILD iM IC G N D U C T O R 1 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

SD6000

Abstract: NDS8426
Contextual Info: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDS8426

Contextual Info: September 1997 NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

LD 1106 BS

Abstract: NDS8426
Contextual Info: National Semiconductor July 1996 ” NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel e nhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's p ro p rie ta ry, h ig h cell density, DMOS tech no lo g y.

8426a

Abstract: S8426A
Contextual Info: F /M M R l C O C N H D U January 1998 I I - D C T O R tm NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor Features General Description SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high

Contextual Info: September 1997 F A I R C H I L D SEM ICONDUCTO R tm NDS8426 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect • 9.9 A, 20 V. Rds^n, = 0.015 & @ VGS= 4.5 V. transistors are produced using Fairchild's proprietary, high cell

NDS8426A

Contextual Info: January 1998 NDS8426A Single N-Channel Enhancement Mode Field Effect Transistor General Description Features SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

560Uf 2.5v

Abstract: Q10284-2 MV-GX MAX668 MBRD835LT4 NDS8426A
Contextual Info: 7/20/99 - LHS +11V to 14.3V Input to 16V at 70 Watts 4.4A 11V to 14.3V IN L1 BH Q10284-2 3.9uH, 9A C1 Sanyo MV-GX 560uF 25V D1 MBRD835LT4 R7 4.7 Vout 16V 4.4A (70 Watts) Q1 NDS8426A 8 EXT 9 10 1 C7 4.7uF C8 0.22 4 VCC CS+ SHDN LDO U1 MAX668 PGND REF FREQ

MAX5904USA

Abstract: IRF 543 MOSFET MAX5904 MAX5904ESA MAX5905ESA MAX5905USA MAX5906 MAX5909
Contextual Info: 19-2238; Rev 2; 11/03 KIT ATION EVALU E L B A IL AVA Low-Voltage, Dual Hot-Swap Controllers/Power Sequencers The discharged filter capacitors of the circuit card provide low impedance to the live backplane. High inrush currents from the backplane to the circuit card can burn

Contextual Info: KIT ATION EVALU LE B A IL A AV 19-1694; Rev 1a; 4/01 3V to 12V Current-Limiting Hot Swap Controllers with Autoretry, DualSpeed/BiLevel Fault Protection Features ♦ Provide Safe Hot Swap for +3V to +12V Power Supplies with Few External Components ♦ Unique Current Regulation Architecture

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

E16-1

Abstract: MAX4271 MAX4271ESA MAX4272 MAX4272ESA MAX4273 MAX4273EEE MAX4273ESE INS290 fast comparator
Contextual Info: 19-1694; Rev 2; 12/07 KIT ATION EVALU E L B A IL AVA 3V to 12V Current-Limiting Hot-Swap Controllers with Autoretry, DualSpeed/BiLevel Fault Protection Features The MAX4271/MAX4272/MAX4273 comprise a complete family of integrated 3V to 12V hot-swap controllers. They allow the safe insertion and removal of

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

TG5-10

Abstract: MAX5918 MAX5918AEEE MAX5918LEEE MAX5919 MAX5919AEEE
Contextual Info: 19-2496; Rev 0; 7/02 KIT ATION EVALU E L B A AVAIL Low-Voltage, Dual Hot-Swap Controllers with Independent ON/OFF Control Features ♦ Safe Hot Swap for +1V to +13.2V Power Supplies with VIN1 or VIN2 ≥ 2.7V The discharged filter capacitors of the circuit card provide low impedance to the live backplane. High inrush

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

FQPF*7N65C APPLICATIONS

Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
Contextual Info: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A