L86Z Search Results

Si4450DY

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

CBVK741B019

Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
Contextual Info: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide

SI9955DY

Abstract: fairchild NDS 1182
Contextual Info: Si9955DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.

Contextual Info: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V

Contextual Info: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: Si4412DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

2539a

Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
Contextual Info: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • These MOSFETs feature faster switching and lower gate

Contextual Info: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching

AA MARKING CODE SO8

Contextual Info: FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

CBVK741B019

Abstract: F011 F63TNR F852 FDS2570 FDS9953A L86Z
Contextual Info: FDS2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4A, 150 V.

FDS9953A

Abstract: 9953A CBVK741B019 F011 F63TNR F852 L86Z
Contextual Info: FDS9953A Dual 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive

FDP2670

Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
Contextual Info: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and

CBVK741B019

Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
Contextual Info: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

D 1437 transistor

Abstract: CBVK741B019 F63TNR L86Z NDM3000 NDM3001 SOIC-16
Contextual Info: SOIC-16 Tape and Reel Data SOIC 16ld s Packaging Configuration: Figure 1.0 N Packaging Description: ELECTROSTATIC SENSITIVE DEVICES DO NOT SHIP O R STORE NEAR STRONG ELECTROSTATIC ELECTROM AGNETIC, MAGNETIC OR RADIOACTIVE FIELDS T NR DATE PT NUM BER PEEL STRENGTH M IN _gms

F63TNR

Abstract: FDFS2P102A soic-8 33a
Contextual Info: FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description Features The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package.

FDS6688

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z rca tube 56
Contextual Info: FDS6688 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

FDS9945

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z 86 diode
Contextual Info: FDS9945 60V N-Channel PowerTrench MOSFET General Description Features • 3.5 A, 60 V. These N Channel Logic Level MOSFET have been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

CBVK741B019

Abstract: F011 F63TNR F852 FDS3812 FDS9953A L86Z
Contextual Info: FDS3812 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. 3.4 A, 80 V.

FDS*6609A

Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
Contextual Info: FDS6609A P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain

CBVK741B019

Abstract: F011 F63TNR F852 FDS9412 FDS9953A L86Z
Contextual Info: FDS9412 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain