FDP2670
Abstract: D2Pak Package dimensions CBVK741B019 EO70 F63TNR FDB2670 FDP7060 NDP4060L
Contextual Info: FDP2670/FDB2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 200V MOSFETs with low on-resistance and
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CBVK741B019
Abstract: EO70 F63TNR FDB6644 FDP6644 FDP7060 NDP4060L
Contextual Info: FDP6644/FDB6644 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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high voltage mosfet, to-220 case
Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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Contextual Info: FDP6690S/FDB6690S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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Contextual Info: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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T0-263
Abstract: CBVK741B019 FDB4020P FDP4020P FDP7060 low threshold mosfet p-channel TO-220
Contextual Info: FDP4020P/FDB4020P P-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This P-Channel low threshold MOSFET has been designed for use as a linear pass element for low voltage outputs. In addition, the part may be used as a low voltage
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FDB7045L
Abstract: CBVK741B019 EO70 F63TNR FDP7045L FDP7060 NDP4060L
Contextual Info: FDP7045L/FDB7045L N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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TO220 Semiconductor Packaging
Abstract: CBVK741B019 EO70 F63TNR FDB6676 FDP6676 FDP7060 NDP4060L marking code ng Fairchild
Contextual Info: FDP6676/FDB6676 30V N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
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fdp6676/fdb6676to220 semiconductor packagingcbvk741b019eo70+6f63tnrfdb6676fdp6676fdp7060ndp4060lmarking code ng fairchild
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zener diode 3.0 b2
Abstract: m 9835 zener diodes color coded CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7050 NDP4060L
Contextual Info: March 1996 NDP7050 / NDB7050 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
Contextual Info: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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Contextual Info: FDP5645/FDB5645 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 83 A, 60 V.
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FDP5680
Contextual Info: FDP5680/FDB5680 60V N-Channel PowerTrenchTM MOSFET General Description Features 40 A, 60 V. RDS ON = 0.020 Ω @ VGS = 10 V RDS(ON) = 0.023 Ω @ VGS = 6 V. This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters
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Contextual Info: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This
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MOSFET and parallel Schottky diode
Abstract: CBVK741B019 EO70 FDB6644S FDP6644 FDP6644S FDP7060
Contextual Info: FDP6644S/FDB6644S 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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zener diode 3.0 b2
Abstract: m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Contextual Info: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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m 9835
Abstract: CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB7060 NDP4060L NDP7060
Contextual Info: May 1996 NDP7060 / NDB7060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L NDP7051 Polycarbonate
Contextual Info: August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is
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CBVK741B019
Abstract: EO70 F63TNR FDP7060 L86Z NDB7061L NDP4060L NDP7061L
Contextual Info: June 1996 NDP7061L / NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density
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50s MARKING CODE
Abstract: FDP7030BL FDP7030BLS MOSFET and parallel Schottky diode CBVK741B019 EO70 FDB7030BLS FDP7060 NDP4060L
Contextual Info: FDP7030BLS / FDB7030BLS 30V N-Channel PowerTrench SyncFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low
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FDP6030BL
Abstract: m 9835 ZENER SINGLE COLOR CODE CBVK741B019 EO70 F63TNR FDB6030BL FDP7060 NDP4060L
Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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CBVK741B019
Abstract: EO70 F63TNR FDB2570 FDP2570 FDP7060 NDP4060L D2Pak Package dimensions
Contextual Info: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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corrugated box spec
Abstract: TO220 Semiconductor Packaging FDP7060 NDP4060L CBVK741B019 EO70 corrugated packaging F9852
Contextual Info: TO-220 Tube Packing Data TO-220 Tube Packing Configuration: Figure 1.0 Packaging Description: TO-220 parts are shipped normally in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in standard option are placed inside a dissipative
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CBVK741B019
Abstract: EO70 F63TNR FDB6030BL FDP6030BL FDP7060 NDP4060L
Contextual Info: FDP6030BL/FDB6030BL N-Channel Logic Level PowerTrench MOSFET General Description Features This N-Channel Logic Level MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
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2539a
Contextual Info: FDP2570/FDB2570 150V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC/DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and
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