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    NDP6060 Search Results

    NDP6060 Datasheets (10)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NDP6060
    Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF 364.92KB 12
    NDP6060
    National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF 76.57KB 6
    NDP6060
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    NDP6060
    National Semiconductor N-Channel Enhancement Mode Field Effect Transistor Scan PDF 325.24KB 6
    NDP6060L
    Fairchild Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF 364.75KB 12
    NDP6060L
    National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF 76.68KB 6
    NDP6060L
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    NDP6060L
    National Semiconductor N-Channel Logic Level Enhancement Mode Field Effect Transistor Scan PDF 391.11KB 7
    NDP6060L_NL
    Fairchild Semiconductor 60V N-Channel Logic Level Enhancement Mode Field Effect Transistor Original PDF 364.73KB 12
    NDP6060_NL
    Fairchild Semiconductor N-Channel Enhancement Mode Field Effect Transistor Original PDF 364.92KB 12
    SF Impression Pixel

    NDP6060 Price and Stock

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    onsemi NDP6060L

    MOSFET N-CH 60V 48A TO220-3
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    Verical () NDP6060L 1,600 50
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    IBS Electronics NDP6060L 3,200 50
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    Master Electronics NDP6060L 1,600
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    onsemi NDP6060

    MOSFET N-CH 60V 48A TO220-3
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    DigiKey NDP6060 Tube 1
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    Avnet Americas NDP6060 Tube 16 Weeks 800
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    Mouser Electronics NDP6060 780
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    Verical () NDP6060 550 50
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    NDP6060 15 8
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    Arrow Electronics () NDP6060 596 16 Weeks 50
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    NDP6060 15 1
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    Newark NDP6060 Bulk 341 1
    • 1 $3.95
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    • 100 $2.10
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    Future Electronics () NDP6060 Tube 16 Weeks 800
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    NDP6060 Tube 9 Weeks 800
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    Onlinecomponents.com NDP6060
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    TME NDP6060 800
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    Richardson RFPD NDP6060 800
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    Avnet Silica NDP6060 17 Weeks 50
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    New Advantage Corporation NDP6060 1,600 1
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    National Semiconductor Corporation NDP6060L

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    Bristol Electronics NDP6060L 2,231
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    Quest Components NDP6060L 1,784
    • 1 $4.00
    • 10 $4.00
    • 100 $4.00
    • 1000 $1.50
    • 10000 $1.50
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    National Semiconductor Corporation NDP6060

    TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,48A I(D),TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NDP6060 36
    • 1 $3.81
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    Others NDP6060L

    AVAILABLE EU
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    ComSIT USA NDP6060L 300
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    NDP6060 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    NDP6060 NDB6060 PDF

    CBVK741B019

    Abstract: EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L NDP6060L
    Contextual Info: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original
    NDP6060L NDB6060L CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060L NDP4060L PDF

    Contextual Info: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original
    NDP6060L NDB6060L PDF

    NDB6060

    Abstract: NDP6060
    Contextual Info: M a rc h 1 9 9 6 N NDP6060 / NDB6060 N-Channel Enhancement M ode Field Effect Transistor General Description Features T hese N -C hannel en h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan
    NDP6060 NDB6060 NDB6060 PDF

    Contextual Info: A p r il 1 9 9 6 N ational Semiconductor~ NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese lo g ic level N -C hannel e n h a n ce m e n t m o d e p o w e r fie ld e ffect tra n s isto rs are p ro d u ce d using


    OCR Scan
    NDP6060L NDB6060L PDF

    Contextual Info: April 1996 N NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese logic level N -C hannel e n h a n c e m e n t m o d e p o w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS


    OCR Scan
    NDP6060L NDB6060L 34bTb74 PDF

    zener diode 3.0 b2

    Abstract: F63TNR m 9835 tnr 220 zener diodes color coded CBVK741B019 EO70 FDP7060 L86Z NDB6060L
    Contextual Info: April 1996 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original
    NDP6060L NDB6060L zener diode 3.0 b2 F63TNR m 9835 tnr 220 zener diodes color coded CBVK741B019 EO70 FDP7060 L86Z NDB6060L PDF

    NDB6060

    Abstract: NDP6060 zener diode 11 b1
    Contextual Info: N March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially


    Original
    NDP6060 NDB6060 NDB6060 zener diode 11 b1 PDF

    Contextual Info: March 1996 N NDP6060 / NDB6060 N-Channel Enhancement M ode Field Effect Transistor General Description Features These N -C hannel e n h a n c e m e n t m o d e p o w e r fie ld e ffect tra n s is to rs are p ro d u c e d using N a tio n a l's p ro p rie ta ry , hig h cell d e n s ity , D M O S te c h n o lo g y .


    OCR Scan
    NDP6060 NDB6060 PDF

    Contextual Info: M M a rc h 1996 National Semiconductorm NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor G eneral D escriptio n Features These N -C hannel e n h a n ce m e n t m o d e p o w e r fie ld • 4 8A , 60V. RDSI0N = 0 .0 2 5Q @ VGS= 10V. e ffect tra n s is to rs are p ro d u c e d u sing N a tio n a l's


    OCR Scan
    NDP6060 NDB6060 PDF

    A24100

    Abstract: CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L NDP6060
    Contextual Info: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    NDP6060 NDB6060 A24100 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L PDF

    NDP6060L

    Abstract: NDB6060L
    Contextual Info: gC M National Semiconductor A p ril 19 96 NDP6060L / NDB6060L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National s proprietary, high cell density, DMOS


    OCR Scan
    NDP6060L/ NDB6060L bS0ii30 0040EÃ NDP6060L NDB6060L PDF

    zener diode 3.0 b2

    Abstract: 6.8 B2 zener m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L
    Contextual Info: March 1996 NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original
    NDP6060 NDB6060 zener diode 3.0 b2 6.8 B2 zener m 9835 CBVK741B019 EO70 F63TNR FDP7060 L86Z NDB6060 NDP4060L PDF

    Contextual Info: March 1996 N NDP6060 / NDB6060 N-Channel Enhancement Mode Field Effect Transistor General Description Features T hese N -C hannel en h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan
    NDP6060 NDB6060 NDB6060 PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original
    STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640 PDF

    N55C

    Abstract: NDB6060 NDB6060L NDP6060L
    Contextual Info: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T h e se logic le v e l N -C h a n n e l e n h a n c e m e n t m o d e p o w e r field effe c t tra n s is to rs are p ro d u c e d u sin g


    OCR Scan
    NDP6060L NDB6060L NDP6060LRev. NDB6060LRev. 34bTb74 N55C NDB6060 NDB6060L PDF

    IRFZ44N complementary

    Abstract: IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 BUZ110S HRF3205 harris 4365
    Contextual Info: 39460.3 - UltraFET Cross LC 1/22/98 10:42 AM Page 1 55V UltraFET MOSFETs Competitive Cross Reference HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER HARRIS RECOMMENDED PART NUMBER PART NUMBER PACKAGE COMPETITOR FILE NUMBER BUK7508-55


    Original
    BUK7508-55 BUK7514-55A BUK7524-55A BUK7530-55A BUK7570-55A BUZ100S BUZ102S BUZ110S BUZ111S IRF1010N IRFZ44N complementary IRF3205 COMPLEMENTARY IRF3205 application a/surface mount IRFZ44N NBP6060 IRF3205 TO-220 philips 435-2 HRF3205 harris 4365 PDF

    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


    Original
    P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS PDF

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original
    element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor PDF

    12SnOFC

    Abstract: BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent
    Contextual Info: Date Created: 1/9/2004 Date Issued: 2/13/2004 PCN # 20040204 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original
    HUF75343P3 HUF75542P3 HUF75631P3 HUF75645P3 HUF75939P3 HUF76107P3 HUF76132P3 HUF76143P3 HUF76419P3 HUF76432P3 12SnOFC BQ37 PMC-90 PMC-90 leadframe material MKT-TO220B03 FDP3672 HRF3205 equivalent mosfet number Tamac4 a105 transistor HRF3205 equivalent PDF

    mosfet cross reference

    Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
    Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P


    Original
    2N7000 IRF7203 FDS9435A 2N7002 OT-23, IRF7204 NDS8434A BS170 mosfet cross reference SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L PDF

    sith

    Abstract: NDP6060L
    Contextual Info: April 1996 N N D P6060L / N D B 6060L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan
    P6060L 6060L NDP6060L NDB6060L sith PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original
    5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


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    AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 PDF