NDP7051 Search Results

NDB7051

Contextual Info: S e p te m b e r 1 9 9 6 N NDP7051 L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features T hese lo g ic level N -C hannel e n h a n c e m e n t m o d e p o w e r fie ld effect tra n s is to rs are p ro d u c e d using

CBVK741B019

Abstract: EO70 F63TNR FDP7060 L86Z NDB7051 NDP4060L NDP7051 Polycarbonate
Contextual Info: August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

NDB-Series

Abstract: NDB7051L NDP7051L
Contextual Info: N a ti on a l Semiconductor May 1996 " ADVANCE INFORMATION NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode pow er fie ld effect tran sisto rs are produced using

Contextual Info: Septem ber 1996 N NDP7051 L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode pow er field effect transistors are produced using National's proprietary, high cell density, DMOS

NDB7051

Abstract: NDB7051L NDP7051 NDP7051L
Contextual Info: Septem ber 1996 N NDP7051 L / N D B 7051L N-Channel Logic Level Enhancement M ode Field Effect Transistor General Description Features T hese logic level N -C hannel e n h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS

CBVK741B019

Abstract: EO70 F63TNR FDP7060 NDB7051L NDP4060L NDP7051L DS1015
Contextual Info: September 1996 NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features 67 A, 50 V. RDS ON = 0.0145 Ω @ VGS= 5 V RDS(ON) = 0.0115 Ω @ VGS= 10 V. These logic level N-Channel enhancement mode power field

Contextual Info: August 1 99 6 N NDP7051 / NDB7051 N-Channel Enhancement M ode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDB7051

Abstract: NDP7051
Contextual Info: N August 1996 NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored

NDB7051

Abstract: NDP7051
Contextual Info: M ay 1996 National Semiconductor " NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

20301-D

Abstract: NDB7051 NDP7051 ACAA TRANSISTOR
Contextual Info: August 1996 N NDP7051 / NDB7051 N-Channel Enhancement M ode Field Effect Transistor General Description Features T hese N -C hannel e n h a n c e m e n t m o d e po w er field effect transistors are p roduced using N ational's proprietary, high cell density, DMOS technology.

Contextual Info: August 1996 N NDP7051 / NDB7051 N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m ode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.

NDB7051L

Abstract: NDP7051L
Contextual Info: N September 1996 NDP7051L / NDB7051L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS

mosfet cross reference

Abstract: SMP40N06 SMP75N06-08 SI9952DY SMP60N03-10L IRFZ44 TO-263 Si9948DY irf1010e equivalent IRLL014N NDT3055L
Contextual Info: Discrete POWER & Signal Technologies MOSFET Cross Reference Guide Industry Recommended Part Number Fairchild Device Package Industry Recommended Part Number Fairchild Device 2N7000 2N7000 TO-92, N IRF7203 FDS9435A 2N7002 2N7002 SOT-23, N IRF7204 NDS8434A SO-8, P

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

ss8050 d 331

Abstract: tip122 tip127 mosfet audio amp KSD180 KA1M0880 application note SS8550 D 331 dual cc BAW62 KA2S0680 ss8550 sot-23 MPSA92(KSP92) equivalent DIODE 1N4148 LL-34
Contextual Info: Power Products S e l e c t i o n G u i d e September, 1999 Power Products Table of Contents Alphanumeric Listing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2