SI4450DY Search Results
SI4450DY Datasheets (7)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| SI4450DY | Fairchild Semiconductor | 60V N-Channel PowerTrench MOSFET | Original | 94.85KB | 5 | ||
| Si4450DY | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| Si4450DY | Vishay Intertechnology | N-Channel Enhancement-Mode MOSFET | Original | 28.94KB | 3 | ||
| SI4450DY | Vishay Siliconix | N-Channel 60-V (D-S) Rated MOSFET | Original | 61.98KB | 4 | ||
| SI4450DY_NL | Fairchild Semiconductor | 60V N-Channel PowerTrench MOSFET | Original | 94.86KB | 5 | ||
| Si4450DY SPICE Device Model | Vishay | N-Channel Enhancement-Mode MOSFET | Original | 206.22KB | 3 | ||
| SI4450DY-T1 | Vishay Intertechnology | N-Channel Enhancement-Mode MOSFET | Original | 28.94KB | 3 |
SI4450DY Price and Stock
Vishay Siliconix SI4450DY-T1Trans MOSFET N-CH 60V 7.5A 8-Pin SOIC N T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4450DY-T1 | 2,209 |
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SI4450DY-T1 | 2,175 |
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| SI4450DY-T1 | 396 |
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| SI4450DY-T1 | 287 |
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| SI4450DY-T1 | 103 |
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Vishay Siliconix SI4450DYTrans MOSFET N-CH 60V 8A 8-Pin SOIC T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4450DY | 1,651 |
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| SI4450DY | 248 | 1 |
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SI4450DY | 198 |
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| SI4450DY | 198 |
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| SI4450DY | 71 |
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| SI4450DY | 25 |
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| SI4450DY | 23 |
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SI4450DY | 940 |
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SI4450DY | 39 |
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Others SI4450DY-TI |
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SI4450DY-TI | 9 |
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Vishay Intertechnologies SI4450DY-T1TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,7.5A I(D),SO |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4450DY-T1 | 1,812 |
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| SI4450DY-T1 | 632 |
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Need SI4450DYPOWER, FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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SI4450DY | 232 |
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SI4450DY Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Si4450DY
Abstract: CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
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si4450dycbvk741b019f011f63tnr+3 | |
Si4450DYContextual Info: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) |
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si4450dys-49534--rev06-oct-97 | |
Si4450DY-T1
Abstract: Si4450DY
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si4450dysi4450dy-t108-apr-05 | |
Si4450DYContextual Info: Si4450DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4450dy | |
Si4450DYContextual Info: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4450dys-47958--rev15-apr-96 | |
Si4450DYContextual Info: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4450dys-47958--rev15-apr-96 | |
Si4450DYContextual Info: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching |
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si4450dy | |
Si4450DYContextual Info: SPICE Device Model Si4450DY Vishay Siliconix N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4450dy17-apr-01 | |
Si4450DY
Abstract: S-49534 vishaysiliconix
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si4450dys-49534--rev06-oct-97s-49534+1 | |
Si4450DY
Abstract: Si4450DY-T1
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si4450dysi4450dy-t1s-03951--rev26-may-03 | |
Si4450DY
Abstract: Si4450DY-T1-E3
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si4450dysi4450dy-t1-e3si4450dy-t1-ge311-mar-11 | |
SI4450DYT1E3Contextual Info: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D |
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si4450dysi4450dy-t1-e3si4450dy-t1-ge311-mar-11+1 | |
SI4450DY-T1
Abstract: SI4450DY
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si4450dysi4450dy-t118-jul-08 | |
Si4450DYContextual Info: SPICE Device Model Si4450DY Vishay Siliconix N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range |
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si4450dy18-jul-08 | |
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Si4450DYContextual Info: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D |
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si4450dysi4450dy-t1-e3si4450dy-t1-ge32011/65/eu+2 | |
Si4450DYContextual Info: Si4450DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.024 @ VGS = 10 V "7.5 0.03 @ VGS = 6.0 V "6.5 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) |
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si4450dys-47958--rev15-apr-96 | |
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Contextual Info: Si4450DY Vishay Siliconix N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.024 at VGS = 10 V 7.5 0.03 at VGS = 6.0 V 6.5 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFET D SO-8 S 1 8 D |
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si4450dysi4450dy-t1-e3si4450dy-t1-ge32002/95/ec+3 | |
Si4450DY
Abstract: sv31
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si4450dysv31 | |
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Contextual Info: Si4450DY 60V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching |
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si4450dy | |
S-49534
Abstract: Si4450DY
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si4450dys-49534--rev06-oct-97s-49534 | |
SI4450DY-T1-E3
Abstract: Si4450DY SI4450DYT1E3 SI4450DY-T1-GE3
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si4450dysi4450dy-t1-e3si4450dy-t1-ge318-jul-08+1 | |
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Contextual Info: SI4450DY Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V)20 I(D) Max. (A)7.5 I(DM) Max. (A) Pulsed I(D)5.5 @Temp (øC)70’ IDM Max (@25øC Amb)50 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)2.5 Minimum Operating Temp (øC)-55 |
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si4450dy | |
S-49534
Abstract: Si4450DY
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si4450dys-49534--rev06-oct-97s-49534 | |
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Contextual Info: LT1738 Slew Rate Controlled Ultralow Noise DC/DC Controller U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ The LT 1738 is a switching regulator controller designed to lower conducted and radiated electromagnetic interference EMI . Ultralow noise and EMI are achieved by |
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lt1738lt176x150maot-23+4 | |