| BUK9618-55 |
|
Philips Semiconductors
|
TrenchMOS Transistor Logic Level FET |
Original |
PDF
|
53.85KB |
8 |
| BUK9618-55 |
|
Toshiba
|
Power MOSFETs Cross Reference Guide |
Original |
PDF
|
165.78KB |
67 |
| BUK9618-55A |
|
NXP Semiconductors
|
BUK9618-55A - TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 61 A; Qgd (typ): 14 nC; RDS(on): 16@10V18@5V19@4.5V mOhm; Thermal Resistance: 1.1 K/W; VDSmax: 55 V |
Original |
PDF
|
180.91KB |
13 |
| BUK9618-55A |
|
Philips Semiconductors
|
TrenchMOS Logic Level FET |
Original |
PDF
|
139.12KB |
14 |
| BUK9618-55A,118 |
|
NXP Semiconductors
|
BUK9618 - TRANSISTOR 61 A, 55 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3, FET General Purpose Power |
Original |
PDF
|
180.89KB |
13 |
| BUK9618-55A,118 |
|
NXP Semiconductors
|
TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 61 A; Qgd (typ): 14 nC; RDS(on): 16@10V18@5V19@4.5V mOhm; Thermal Resistance: 1.1 K/W; VDSmax: 55 V; Package: SOT404 (D2PAK); Container: Tape reel smd |
Original |
PDF
|
139.1KB |
14 |
| BUK9618-55A/T3 |
|
NXP Semiconductors
|
TrenchMOS logic level FET - Configuration: Single N-channel ; ID DC: 61 A; Qgd (typ): 14 nC; RDS(on): 16@10V18@5V19@4.5V mOhm; Thermal Resistance: 1.1 K/W; VDSmax: 55 V |
Original |
PDF
|
139.1KB |
14 |
| BUK961855T3 |
|
Philips Semiconductors
|
TrenchMOS transistor Logic level FET |
Original |
PDF
|
53.85KB |
8 |
