IRFP150 Search Results

035H

Abstract: IRFPE30 50V 10A ultra fast diode
Contextual Info: PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

IRFP150N

Contextual Info: IRFP150N Data Sheet March 2000 File Number 4844 44A, 100V, 0.030 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50N /Subject (44A, 100V, 0.030 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (Intersil, semiconductor, 44A, 100V, 0.030 Ohm, NChannel Power MOSFET,

IRFP150

Abstract: C4023 GC527 IRFP150FI c2814 TC08 Tc03s
Contextual Info: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: un TYPE IRFP150 IRFP150FI 7 ^ 5 3 7 00457E7 235 • SGTH SGS-THOMSON IRFP150 IRFP150FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS V d ss RüS on Id 100 V 100 V < 0.055 Q < 0.055 n 40 A 23 A . Q . . TYPICAL RDS(on) = 0.035 AVALANCHE RUGGED TECHNOLOGY

Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E » • TTbHma N-CHANNEL POWER MOSFETS IRFP150/1511152/153 FEATURES • • • • • • • D Q 1 2 3 Ü 4 l b 1* ■ SMGK TO-3P Lower R d s <o n Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure

IRFP150

Abstract: ir 740p 740p 441D irfp150 ir
Contextual Info: P D -9 .4 4 1 D International Ii^r Rectifier IRFP150 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements

IRFP150A

Contextual Info: IRFP150A Advanced Power MOSFET FEATURES BVDSS = 100 V Avalanche Rugged Technology RDS on = 0.04 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 43 A Improved Gate Charge Extended Safe Operating Area TO-3P Ο 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.) @ VDS = 100V

4311 mosfet transistor

Abstract: tl 4311 transistor tl 4311 IRFP150 TB334 T2T-2
Contextual Info: IRFP150 Data Sheet July 1999 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of

Contextual Info: PD - 91503D IRFP150N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V Ω RDS on = 0.036W G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier

irfp150npbf

Abstract: 035H IRFPE30
Contextual Info: PD - 95002 IRFP150NPbF • Lead-Free 1 IRFP150NPbF 2 IRFP150NPbF TO-247AC Package Outline Dimensions are shown in millimeters inches -D- 3.65 (.143) 3.55 (.140) 15.90 (.626) 15.30 (.602) -B- -A- 0.25 (.010) M D B M 2.50 (.089) 1.50 (.059) 4 5.50 (.217) 20.30 (.800)

IRFP RE 40

Abstract: IRFP P CHANNEL IRFP150 SGS Transistor
Contextual Info: r= Z SGS-THOM SON ^ 7#» HDfgMilLlKgirMDlgi IRFP 150/F I-151/FI IRFP 152/F I-153/FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE V DSS ^D S on IRFP150 IRFP150FI 100 V 100 V 0.055 fi 0.055 Q IRFP151 IRFP151 FI 60 V 60 V 0.055 0.055 IRFP152 IRFP152FI

035H

Abstract: IRFPE30 IRFP150PBF
Contextual Info: PD - 95003 IRFP150PbF • Lead-Free www.irf.com 1 2/11/04 IRFP150PbF 2 www.irf.com IRFP150PbF www.irf.com 3 IRFP150PbF 4 www.irf.com IRFP150PbF www.irf.com 5 IRFP150PbF 6 www.irf.com IRFP150PbF TO-247AC Package Outline Dimensions are shown in millimeters inches

irfp150

Contextual Info: IRFP150, SiHFP150 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.055 Qg (Max.) (nC) 140 Qgs (nC) 29 Qgd (nC) 68 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated

TsE 151

Abstract: transistor irfp IRFP152 IRFP150 IRFP 150fi IRFP P CHANNEL IRFP150FI IRFP151 IRFP transistors
Contextual Info: _ 30E D m 7CJ2C1537 GQS^ÖSS 2 • ^ T 7'3 0 |-|3 7 SCS-THOMSON Mmi[LEg¥[E«P g§ L 1 _ S" TH0MS0N TYPE IRFP150 IRFP150FI IRFP151 IRFP151FI IRFP152 IRFP152FI IRFP153 IRFP153FI Vpss 100 V 100 V 60 V 60 V 100 V 100 V 60 V 60 V IRFP 150/FI-151/FI IRFP 152/FI-153/FI

Contextual Info: PD - 95003 IRFP150PbF • Lead-Free 2/11/04 Document Number: 91203 www.vishay.com 1 IRFP150PbF Document Number: 91203 www.vishay.com 2 IRFP150PbF Document Number: 91203 www.vishay.com 3 IRFP150PbF Document Number: 91203 www.vishay.com 4 IRFP150PbF Document Number: 91203

mosfet IRF 3306

Abstract: IRFPI50 IRPF IRFP151 ocr31 transistor irfp 100-C IRFP150 IRFP152 IRFP153
Contextual Info: Standard Power M O S FE T s • IRFP150, IRFP151, IRFP152, IRFP153 File Number Power MOS Field-Effect Transistore N-Channel Enhancement-Mode Power Field-Effect Transistors 34 A and 40 A, 60 V - 100 V rDsioni = 0.055 Q and 0.08 fi N-CHANNEL ENHANCEMENT MODE

ST hexfet to 247

Abstract: TO-247AC Package igbt lead assignments 035H IRFPE30 irfp150npbf
Contextual Info: PD - 95002 IRFP150NPbF • Lead-Free www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 www.irf.com IRFP150NPbF www.irf.com 7 IRFP150NPbF TO-247AC Package Outline Dimensions are shown in millimeters inches

irfp150

Abstract: mosfet ir 250p
Contextual Info: International ioR Rectifier HEXFET Power MOSFET “ l,8SS,S5 0D1SMtb D3T PD-9.441D IIN R IRFP150 INTERNATIONAL R E C T I F I E R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling

Contextual Info: PD - 95515 IRFP150VPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description

sil 5102

Abstract: IRFP150 TB334
Contextual Info: IRFP150 Data Sheet May 2000 40A, 100V, 0.055 Ohm, N-Channel Power MOSFET [ /Title IRFP1 50 /Subject (40A, 100V, 0.055 Ohm, NChannel Power MOSFET) /Autho r () /Keywords (40A, 100V, 0.055 Ohm, NChannel Power MOSFET, Intersil Corporation, TO247) /Creator ()

Contextual Info: PD - 94459A IRFP150V HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 24mΩ G ID = 47A S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize

035H

Abstract: IRFPE30
Contextual Info: PD - 95002 IRFP150NPbF • Lead-Free www.irf.com 1 2/11/04 IRFP150NPbF 2 www.irf.com IRFP150NPbF www.irf.com 3 IRFP150NPbF 4 www.irf.com IRFP150NPbF www.irf.com 5 IRFP150NPbF 6 www.irf.com IRFP150NPbF www.irf.com 7 IRFP150NPbF TO-247AC Package Outline Dimensions are shown in millimeters inches

IRF1310N

Abstract: IRFP150N IRFP150N International Rectifier 4.5v to 100v input regulator
Contextual Info: PD - 9.1503B IRFP150N PRELIMINARY HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.036Ω G Description ID = 42A S Fifth Generation HEXFETs from International Rectifier