IRFP140 Search Results

IRFP140R

Contextual Info: IRFP140_RC, SiHFP140_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

IRFP140P

Contextual Info: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated

9442

Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Contextual Info: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243

Contextual Info: IRFP140N Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Title FP1 N bt A, 0V, 40 m, Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Simulation Models - Temperature Compensated PSPICE and SABER Electrical Models

IRFP140R

Abstract: IRFP142R IRFP143R CI 6264 IRFP142 IRFP141R f 6267 9l 15a
Contextual Info: Rugged Power M _ IRFP140R, IRFP141R, IRFP142R, IRFP143R File Num ber 2086 Avalanche Energy Rated N-Channel Power MOSFETs 27A and 24A, 60V-100V rDs on = 0 .0 8 5 0 and 0.110 N-CHANNEL ENHANCEMENT MODE

Contextual Info: International IG R Rectifier PD - 9.1343A IRFP140N PRELIMINARY HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = "100 V RüS on = 0.052Î2 lD = 33A

IRF540N

Abstract: IRFP140N
Contextual Info: PD - 91343B IRFP140N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.052Ω G ID = 33A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: 4305271 D o s m a s STB • H a r r is HAS IRFP140R, IRFP141R IRFP142R, IRFP143R N -C hannel Power MOSFETs Avalanche Energy Rated August 1991 Features Package TO -247 TOP VIEW • 27A and 31 A, 80V - 100V • ros on = 0.0770 and 0.099ÎÎ DRAIN (TAB) • Single Pulse Avalanche Energy Rated

TO-247AC Package

Abstract: 035H IRFPE30 PE30
Contextual Info: PD- 95711 IRFP140NPbF • Lead-Free 1 IRFP140NPbF 2 IRFP140NPbF TO-247AC Package Outline Dimensions are shown in millimeters inches TO-247AC Part Marking Information EXAMPLE: T HIS IS AN IRF PE30 WIT H ASSEMBLY LOT CODE 5657 ASS EMBLED ON WW 35, 2000 IN T HE ASSEMBLY LINE "H"

Contextual Info: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated

95a640

Contextual Info: PD - 95509 AUTOMOTIVE MOSFET IRFP1405PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 5.3mΩ

DI 944

Abstract: 942 rectifier diode
Contextual Info: Mi 4ÛS54S2 0 0 1 5 MbO b l l M I N R Rectifier IRFP140 HEXFET Power MOSFET • • • • • • • PD-9.442C INTERNATIO N AL R E C T IF IE R Dynamic dv/dt Rating Repetitive Avalanche Rated Isolated Central Mounting Hole 175°C Operating Temperature

Contextual Info: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: PD- 95424 IRFP140PbF • Lead-Free Document Number: 91202 06/17/04 www.vishay.com 1 IRFP140PbF Document Number: 91202 www.vishay.com 2 IRFP140PbF Document Number: 91202 www.vishay.com 3 IRFP140PbF Document Number: 91202 www.vishay.com 4 IRFP140PbF Document Number: 91202

Contextual Info: IRFP140 S em iconductor D ata S h eet Ju ly 1999 31 A, 100V, 0.077 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRFP140

Contextual Info: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 rDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

IRFP140

Contextual Info: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 rDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247 Dynamic dV/dt Rating Repetitive Avalanche Rated

Contextual Info: PD- 95424 IRFP140PbF • Lead-Free Document Number: 91202 06/17/04 www.vishay.com 1 IRFP140PbF Document Number: 91202 www.vishay.com 2 IRFP140PbF Document Number: 91202 www.vishay.com 3 IRFP140PbF Document Number: 91202 www.vishay.com 4 IRFP140PbF Document Number: 91202

Contextual Info: i H A R R IRFP140, IRFP141, IRFP142, IRFP143 i s s e m i c o n d u c t o r 27 A and 31 A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31 A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

irfp140

Abstract: IRFP141 IRFP142 IRFP143
Contextual Info: i h a ” r r IRFP140, IRFP141, IRFP142, IRFP143 i s " I O O N ° “ C T ° " 27A and 31 A, 80V and 100V, 0.077 and 0.099 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 27A and 31 A, 80V and 100V These are N-Channel enhancement mode silicon gate

Contextual Info: IRFP140, SiHFP140 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • • • • • • • • 100 RDS(on) (Ω) VGS = 10 V 0.077 Qg (Max.) (nC) 72 Qgs (nC) 11 Qgd (nC) 32 Configuration Single D TO-247AC Dynamic dV/dt Rating Repetitive Avalanche Rated

AN7254

Abstract: AN7260 AN9321 AN9322 IRFP140N TB334
Contextual Info: IRFP140N TM Data Sheet March 2000 File Number 4841 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

IRF 640 mosfet

Abstract: SEC IRF 640 AN-1005
Contextual Info: PD - 95509A IRFP1405PbF HEXFET Power MOSFET Features l l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free D VDSS = 55V RDS on = 5.3mΩ G Description

IRFP140

Abstract: IRFP141 IRFP143 IRFP142 IRFp1401
Contextual Info: HE D I MäSS4Sa 000Ö7E0 4 | Data Sheet No. PD-9.442B INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I O R T-39-15 REPETITIVE AVALANCHE AND dv/dt RATED' HEXFET TRANSISTORS IRFP140 IRFP141 IRFP142 :r N-CHANNEL IRFP143 100 Volt, 0.077 Ohm HEXFET TO-247AC TO-3P) Plastic Package