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OMRON Corporation A22NL-BNM-TOA-P100-OC Pushbutton Switches - Industrial Assm,flt,pla bez, Oran,1NO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	A22NL-BNM-TOA-P100-OC					1 $34.59 10 $33.74 100 $28.54 1000 $27.38 10000 $27.38	Get Quote
OMRON Industrial Automation A22NLMMMTOAG100OC ASMBY, LGT, MSHRM, BM, ORG,1NO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	A22NLMMMTOAG100OC	Bulk		14 Weeks	1	1 $29.63 10 $29.63 100 $29.63 1000 $29.63 10000 $29.63	Get Quote
Master Electronics	A22NLMMMTOAG100OC					1 $25.56 10 $22.81 100 $20.31 1000 $19.47 10000 $19.47	Buy Now
OMRON Industrial Automation A22NLMGMTOAG100OC ASMBY, LGT, FULGRD, BM, ORG,1NO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	A22NLMGMTOAG100OC	Bulk		14 Weeks	1	1 $29.63 10 $29.63 100 $29.63 1000 $29.63 10000 $29.63	Get Quote
Master Electronics	A22NLMGMTOAG100OC					1 $25.56 10 $22.81 100 $20.31 1000 $19.47 10000 $19.47	Buy Now
OMRON Industrial Automation A22NLBNMTOAP100OC ASSM, FLT, PLA BEZ, ORAN,1NO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	A22NLBNMTOAP100OC	Bulk		14 Weeks	1	1 $39.42 10 $34.69 100 $34.69 1000 $34.69 10000 $34.69	Get Quote
Master Electronics	A22NLBNMTOAP100OC					1 $34.00 10 $31.81 100 $27.01 1000 $25.90 10000 $25.90	Buy Now
OMRON Industrial Automation A22NL-MGM-TOA-G100-OC PUSHBUTTON, LGT, FULGRD, BM, ORG,1NO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	A22NL-MGM-TOA-G100-OC	Bulk		14 Weeks	1	1 $21.02 10 $21.02 100 $21.02 1000 $21.02 10000 $21.02	Get Quote

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100OC Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
TB-285 Contextual Info: Ceramic High Pass Filter 50Ω HFCN-4400+ 5000 to 10100 MHz Maximum Ratings Operating Temperature -55oC to 100oC Storage Temperature -55 C to 100 C o • • • • • • • o RF Power Input derate linearly to 3W at 100°C ambient 7W Pin Connections	Original	-55oc 100oc hfcn-4400 fv1206-1 +5hfcn-4400d 2002/95/ec tb-285 pl-158 m106185	PDF
STW6NA90 Abstract: sd 50 diode Contextual Info: STW6NA90 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR PRELIMINARY DATA TYPE STW6NA90 • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 900 V < 1.9 Ω 6A TYPICAL RDS(on) = 1.45 Ω ± 30V GATE TO SOURCE VOLTAGE RANTING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	stw6na90 100oc o-247 sd 50 diode	PDF
STD15N06 Contextual Info: STD15N06 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE VDSS R DS on ID STD15N06 60 V < 0.1 Ω 15 A • ■ ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.075 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	std15n06 100oc 175oc o-251 +1o-252	PDF
STP6N60FI Contextual Info: STP6N60FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP6N60FI • ■ ■ ■ ■ VDSS R DS on ID 600 V < 1.2 Ω 3.8 A TYPICAL RDS(on) = 1 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED	Original	stp6n60fi 100oc isowatt220	PDF
STB18N20 Abstract: isd 2100 Contextual Info: STB18N20 N-CHANNEL 200V - 0.145Ω - 18A I2PAK/D2PAK POWER MOSFET TRANSISTOR TYPE STB18N20 • ■ ■ ■ ■ ■ ■ ■ ■ VDSS RDS on ID 200 V <0.18 Ω 18 A TYPICAL RDS(on) = 0.145 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	stb18n20 100oc o-262 o-263 +1isd 2100	PDF
STD6N10 Contextual Info: STD6N10 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD6N10 • ■ ■ ■ ■ ■ ■ ■ ■ ■ VDSS R DS on ID 100 V < 0.45 Ω 6A TYPICAL RDS(on) = 0.35 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	std6n10 100oc 175oc o-251 +1o-252	PDF
BA232 Abstract: Edal Series BA232 Silicon Bridge Rectifier BRIDGE-RECTIFIER BA232-10 Bridge rectifier piv bridge rectifier BA232-5 ba2322 ba2325 Contextual Info: Edal SERIES BA232 Silicon Bridge Rectifier ELECTRICAL RATINGS FOR SINGLE PHASE BRIDGE CIRCUIT MAXIMUM ALLOWABLE DC OUTPUT CURRENT: AT 55o C AMBIENT TEMPERATURE AT 100oC AMBIENT TEMPERATURE 2.0 AMPS 1.2 AMPS MAXIMUM SINGLE CYCLE SURGE CURRENT IFSM 60 AMPS	Original	ba232 100oc ba232-5 ba232-10 +12ba232-20 ba232-30 ba232-40 ba232-50 ba232-60 ba232-70 edal series ba232 silicon bridge rectifier bridge-rectifier bridge rectifier piv bridge rectifier ba2322 ba2325	PDF
9407a Abstract: BPF-A1340 PL-227 048002 Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A1340+ 1000 to 1800 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 1W at 25oC • • • • Good VSWR, 1.4:1 Typ @ Passband High Rejection Shielded case	Original	bpf-a1340 -55oc 100oc 2002/95/ec +6hq1157 m121478 edr-9407auf1 9407a pl-227 048002	PDF
BPF-A127 Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A127+ 118 to 137 MHz Features Maximum Ratings o Operating Temperature Storage Temperature RF Power Input o -40 C to 85 C -55oC to 100oC 0.5W at 25oC Passband rating, derate linearly to 0.25W at 100oC ambient. • •	Original	bpf-a127 -55oc 100oc 2002/95/ec +3hq1157 m117937 edr-9028au	PDF
TB 6064 Abstract: BPF-A122 Contextual Info: Surface Mount Bandpass Filter 50Ω BPF-A122+ 119 to 125 MHz Maximum Ratings Features o Operating Temperature Storage Temperature RF Power Input • Good VSWR, 1.3:1 Typ @ Pass Band • High Stop Band Rejection o -40 C to 85 C -55oC to 100oC 0.5*W at 25oC Application	Original	bpf-a122 -55oc 100oc m102075 +2edr-7824u tb 6064	PDF
BUZ80 Abstract: BUZ80FI transistor BUZ80 Contextual Info: BUZ80 BUZ80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80 BUZ80FI • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 800 V 800 V <4Ω <4Ω 3.4 A 2.1 A TYPICAL RDS(on) = 3.3 Ω AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	buz80 buz80fi 100oc o-220 +2isowatt220 transistor buz80	PDF
STD2N50 Contextual Info: STD2N50 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STD2N50 • ■ ■ ■ ■ ■ ■ VDSS R DS on ID 500 V < 5.5 Ω 2A TYPICAL RDS(on) = 4.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC APPLICATION ORIENTED	Original	std2n50 100oc o-251 o-252	PDF
STP5N30 Abstract: STP5N30FI Contextual Info: STP5N30 STP5N30FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30 STP5N30FI • ■ ■ ■ ■ VDSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.2 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	stp5n30 stp5n30fi 100oc o-220 +1isowatt220	PDF
STB6NA80 Contextual Info: STB6NA80 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V DSS R DS on ID STB6NA80 800 V < 1.9 Ω 5.7 A • ■ ■ ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 1.68 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	stb6na80 100oc o-262 o-263	PDF

IRF740 Abstract: IRF740FI transistor equivalent irf740 irf740 DATA SHEET Contextual Info: IRF740 IRF740FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF740 IRF740FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 0.55 Ω < 0.55 Ω 10 A 5.5 A TYPICAL RDS(on) = 0.42 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	irf740 irf740fi 100oc o-220 +3isowatt220 transistor equivalent irf740 irf740 data sheet	PDF
STP5N30L Abstract: STP5N30LFI Contextual Info: STP5N30L STP5N30LFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE STP5N30L STP5N30LFI • ■ ■ ■ ■ V DSS R DS on ID 300 V 300 V < 1.4 Ω < 1.4 Ω 5A 3.5 A TYPICAL RDS(on) = 1.25 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	stp5n30l stp5n30lfi 100oc o-220 +1isowatt220	PDF
IRF730FI Abstract: IRF730 OC470 irf730f Contextual Info: IRF730 IRF730FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE IRF730 IRF730FI • ■ ■ ■ V DSS R DS on ID 400 V 400 V < 1Ω < 1Ω 5.5 A 3.5 A TYPICAL RDS(on) = 0.82 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC	Original	irf730 irf730fi 100oc o-220 +3isowatt220 oc470 irf730f	PDF
TO-252 MOSFET p channel Contextual Info: STD30NE06L  N - CHANNEL 60V - 0.025 Ω - 30A TO-252 STripFET POWER MOSFET TYPE V DSS R DS o n ID STD30NE06L 60 V < 0.03 Ω 30 A • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.025 Ω EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW GATE CHARGE 100oC	Original	std30ne06l o-252 100oc to-252 mosfet p channel	PDF
10858 Abstract: M9703 Contextual Info: Surface Mount NEW! Band Pass Filter RBP-275 268 to 282 MHz Maximum Ratings Operating Temperature Storage Temperature RF Power Input Features • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35" -40 C to 85 C -55oC to 100oC 0.5W at 25oC	Original	-55oc 100oc rbp-275 gp731 +5tb-332 pl-176 m97032 10858 m9703	PDF
TO-247ad Abstract: SBL4030PT SBL4035PT SBL4040PT SBL4045PT Contextual Info: SBL4030PT thru SBL4045PT Low VF Schottky Barrier Rectifiers A C A Dimensions TO-247AD A C A C TAB A=Anode, C=Cathode, TAB=Cathode SBL4030PT SBL4035PT SBL4040PT SBL4045PT Symbol VRRM V 30 35 40 45 VRMS V 21 24.5 28 31.5 VDC V 30 35 40 45 Characteristics @TC=100oC	Original	sbl4030pt sbl4045pt o-247ad sbl4035pt +2sbl4040pt to-247ad	PDF
s3pdb85n18 Abstract: S3PDB85N16 S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85 pwm INVERTER S3PDB Contextual Info: S3PDB85 Three Phase Rectifier Modules Dimensions in mm 1mm=0.0394" Type S3PDB85N08 S3PDB85N12 S3PDB85N14 S3PDB85N16 S3PDB85N18 – + VRSM V 900 1300 1500 1700 1900 VRRM V 800 1200 1400 1600 1800 ~~~ Symbol Idav Test Conditions TC=100oC, module o Maximum Ratings	Original	s3pdb85 s3pdb85n08 s3pdb85n12 s3pdb85n14 +6s3pdb85n16 s3pdb85n18 100oc 50/60hz pwm inverter s3pdb	PDF
M5 DIODE 22-35 L Abstract: DIODE 22-35 L M5 DIODE 22-35 SDD36 SDD36N08 SDD36N12 SDD36N14 pwm 50hz Contextual Info: SDD36 Diode-Diode Modules Dimensions in mm 1mm=0.0394" Type SDD36N08 SDD36N12 SDD36N14 SDD36N16 SDD36N18 Symbol IFRMS IFAVM VRSM V 900 1300 1500 1700 1900 Test Conditions TVJ=TVJM TC=100oC; 180o sine VRRM V 800 1200 1400 1600 1800 Maximum Ratings Unit 60	Original	sdd36 sdd36n08 sdd36n12 sdd36n14 +9sdd36n16 sdd36n18 100oc 50/60hz 180oc m5 diode 22-35 l diode 22-35 l m5 diode 22-35 pwm 50hz	PDF
RBP-400 Abstract: GP731 Contextual Info: Surface Mount Band Pass Filter RBP-400+ 292 to 490 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good VSWR, 1.5:1 Typ @ Pass Band • Small Size 0.35" X 0.35" • •	Original	rbp-400 -55oc 100oc gp731 +32002/95/ec m104389 edr-7836au	PDF
gp731 Abstract: RF band pass filter RBP-275 Contextual Info: RBP-275+ RBP-275 Surface Mount Band Pass Filter 268 to 282 MHz Features Maximum Ratings Operating Temperature Storage Temperature RF Power Input -40 C to 85 C -55oC to 100oC 0.5W at 25oC o o • Good Return Loss, 20 dB Typ @ Pass Band • Small Size 0.35" X 0.35"	Original	rbp-275 -55oc 100oc 2002/95/ec +4gp731 tb-332 pl-176 rf band pass filter	PDF

100OC Search Results

100OC Price and Stock

OMRON Corporation A22NL-BNM-TOA-P100-OC

OMRON Industrial Automation A22NLMMMTOAG100OC

OMRON Industrial Automation A22NLMGMTOAG100OC

OMRON Industrial Automation A22NLBNMTOAP100OC

OMRON Industrial Automation A22NL-MGM-TOA-G100-OC

100OC Datasheets Context Search

TB-285

STW6NA90

STD15N06

STP6N60FI

STB18N20

STD6N10

BA232

9407a

BPF-A127

TB 6064

BUZ80

STD2N50

STP5N30

STB6NA80

IRF740

STP5N30L

IRF730FI

TO-252 MOSFET p channel

10858

TO-247ad

s3pdb85n18

M5 DIODE 22-35 L

RBP-400

gp731