Z11B Search Results

Z11B Datasheets (7)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
Z11B	Shenzhen Yongerjia Electronic	Zener Diode	Original	PDF	196.11KB	4
Z11B1FS	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF	40.96KB	1
Z11B1X	Unknown	Shortform Electronic Component Datasheets	Short Form	PDF	40.95KB	1
GDZ11B	SUNMATE electronic Co., LTD	Surface mount silicon Zener diodes in SOD-323 package, 2.0 to 36V voltage range, 200mW power dissipation, low leakage current, and dynamic resistance from 30 to 1000 ohms, designed for compact electronic applications.Surface mount silicon Zener diodes in SOD-323 package, 2.0 to 36V voltage range, 200mW power dissipation, low leakage current, and dynamic resistance from 30 to 1000 ohms, suitable for compact electronic designs.Surface mount silicon Zener diodes in SOD-323 package, 2.0 to 36V voltage range, 200mW power dissipation, low leakage current, and dynamic resistance from 30 to 1000 ohms, designed for compact electronic applications.Surface mount silicon Zener diodes in SOD-323 package, 2.0 to 36V voltage range, 200mW power dissipation, low leakage current, and dynamic resistance from 30 to 1000 ohms, designed for compact electronic applications.Surface mount silicon Zener diodes in SOD-323 package, 2.0 to 36V voltage range, 200mW power dissipation, low leakage current, and dynamic resistance up to 1000 ohms.Surface mount silicon Zener diodes in SOD-323 package, 2.0 to 36V voltage range, 0.2W power dissipation, low Zener impedance, suitable for surface mounting with reverse current and dynamic resistance specifications provided for various part numbers.Surface mount silicon Zener diodes in SOD-323 package, 2.0 to 36V voltage range, 200mW power dissipation, low leakage current, and dynamic resistance from 30 to 1000 ohms, designed for compact electronic applications.Surface mount silicon Zener diodes in SOD-323 package, 2.0 to 36V voltage range, 200mW power dissipation, low dynamic resistance, designed for high-density circuits with reverse current and leakage optimized for stable regulation.Surface mount silicon Zener diodes in SOD-323 package with voltage range 2.0 to 36V, power dissipation 200mW, low Zener impedance, and reverse current up to 120μA depending on型号.Surface mount silicon Zener diodes in SOD-323 package, 2.0 to 36V voltage range, 200mW power dissipation, low dynamic resistance, and reverse current up to 1000μA, suitable for compact electronic applications.	Original	PDF
EDZ11B	SUNMATE electronic Co., LTD	Surface mount silicon Zener diode in SOD-523 package, 3.3 to 36V voltage range, 0.2W power dissipation, ±5% Zener voltage tolerance, low leakage current, and high reliability for general-purpose regulation.Surface mount silicon Zener diode in SOD-523 package, 3.3 to 36V voltage range, 0.2W power dissipation, ±5% tolerance, low leakage current, high reliability, with reverse power dissipation and surge current ratings specified across various Zener voltages.	Original	PDF
PTZ11B	SUNMATE electronic Co., LTD	Surface mount silicon zener diode in SMA package, 3.3 to 36V zener voltage range, 1.0W power dissipation, low leakage current, high reliability, suitable for voltage regulation applications.Surface mount silicon zener diode in SMA package, 3.3 to 36V zener voltage range, 1.0W power dissipation, low leakage current, high reliability, suitable for voltage regulation applications.Surface mount silicon zener diode in SMA (DO-214AC) package, 3.3 to 36V voltage range, 1.0W power dissipation, low leakage current, high reliability, ±5% zener voltage tolerance, suitable for surface mount applications.Surface mount silicon zener diode in SMA (DO-214AC) package, 3.3 to 36V voltage range, 1.0W power dissipation, ±5% zener voltage tolerance, low leakage current, suitable for high reliability applications.Surface mount silicon zener diode in SMA (DO-214AC) package, 3.3 to 36V voltage range, 1.0W power dissipation, low leakage current, high reliability, ±5% zener voltage tolerance, suitable for surface mount applications.Surface mount silicon zener diode in SMA (DO-214AC) package, 3.3 to 36V voltage range, 1.0W power dissipation, ±5% zener voltage tolerance, low leakage current, available in multiple breakdown voltages.Surface mount silicon zener diode in SMA (DO-214AC) package, 3.3 to 36V voltage range, 1.0W power dissipation, ±5% zener voltage tolerance, low leakage current, suitable for high reliability applications.Surface mount silicon zener diode in SMA package, 3.3 to 36V zener voltage range, 1.0W power dissipation, low leakage current, high reliability, suitable for voltage regulation applications.Surface mount silicon zener diode in SMA (DO-214AC) package, 3.3 to 36V voltage range, 1.0W power dissipation, low leakage current, high reliability, ±5% zener voltage tolerance, suitable for surface mount applications.	Original	PDF
UDZ11B	SUNMATE electronic Co., LTD	Surface mount silicon Zener diode in SOD-323 package with 2.0 to 56V voltage range, 200mW power dissipation, and very sharp breakdown characteristics suitable for automated assembly processes.Surface mount silicon Zener diode in SOD-323 package with voltage range 2.0 to 56V, power dissipation 200mW, and tight tolerance on breakdown voltage for automated assembly applications.Surface mount silicon Zener diode in SOD-323 package with 2.0 to 56V voltage range, 200mW power dissipation, tight tolerance breakdown voltage, and operating temperature from -65 to +150°C.Surface mount silicon Zener diode in SOD-323 package with voltage range 2.0 to 56V, power dissipation up to 200mW, and tight tolerance on breakdown voltage for automated assembly applications.Surface mount silicon Zener diode in SOD-323 package with 2.0 to 56V voltage range, 200mW power dissipation, and tight tolerance on breakdown voltage for automated assembly applications.Surface mount silicon Zener diode in SOD-323 package with 2.0 to 56V breakdown voltage range, 200mW power dissipation, and tight voltage tolerance for automated assembly applications.	Original	PDF

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Same Sky ACZ11BR1E-20FD1-12C ENCODER INCREM QUAD VERT PC PIN
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DigiKey	ACZ11BR1E-20FD1-12C	Box	10,590		1	1 $3.22 10 $2.52 100 $1.97 1000 $1.54 10000 $1.54	Buy Now
Newark	ACZ11BR1E-20FD1-12C	Bulk			1	1 $2.44 10 $2.44 100 $2.44 1000 $2.44 10000 $2.44	Buy Now
IBS Electronics	ACZ11BR1E-20FD1-12C		880		100	1 - 10 - 100 $2.07 1000 $1.93 10000 $1.83	Buy Now
Master Electronics	ACZ11BR1E-20FD1-12C		880			1 - 10 - 100 $1.48 1000 $1.38 10000 $1.31	Buy Now
Nexperia PDZ11BF DIODE ZENER 11V 400MW SOD323
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DigiKey	PDZ11BF	Cut Tape	9,545		1	1 $0.20 10 $0.12 100 $0.08 1000 $0.08 10000 $0.08	Buy Now
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Panasonic Electronic Components ALZ11B05W RELAY GEN PURPOSE SPDT 16A 5V
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DigiKey	ALZ11B05W	Bulk	7,630		1	1 $2.48 10 $2.21 100 $1.97 1000 $1.75 10000 $1.61	Buy Now
Avnet Americas	ALZ11B05W	Bulk		21 Weeks	100	1 - 10 - 100 $1.60 1000 $1.49 10000 $1.42	Buy Now
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RS	ALZ11B05W	Bulk		12 Weeks	100	1 - 10 - 100 $2.46 1000 $2.46 10000 $2.46	Get Quote
Bristol Electronics	ALZ11B05W		98		2	1 - 10 $2.67 100 $1.25 1000 $1.25 10000 $1.25	Buy Now

TTI	ALZ11B05W	Tube			100	1 - 10 - 100 $1.70 1000 $1.57 10000 $1.52	Buy Now
IBS Electronics	ALZ11B05W		1,900		100	1 - 10 - 100 $2.74 1000 $2.39 10000 $2.20	Buy Now
Master Electronics	ALZ11B05W		1,900			1 - 10 - 100 $1.96 1000 $1.71 10000 $1.57	Buy Now
Sager	ALZ11B05W				100	1 - 10 - 100 $1.89 1000 $1.71 10000 $1.64	Buy Now
Panasonic Electronic Components ALZ11B24W RELAY GEN PURPOSE SPDT 16A 24V
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TME	ALZ11B24W				500	1 - 10 - 100 - 1000 $2.46 10000 $2.46	Get Quote
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Master Electronics	ALZ11B24W		605			1 - 10 - 100 $1.74 1000 $1.52 10000 $1.39	Buy Now
Sager	ALZ11B24W				100	1 - 10 - 100 $2.02 1000 $1.82 10000 $1.75	Buy Now
PanJit Group PDZ11B_R1_00001 DIODE ZENER 11V 400MW SOD323
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DigiKey	PDZ11B_R1_00001	Cut Tape	4,900		1	1 $0.21 10 $0.13 100 $0.08 1000 $0.05 10000 $0.05	Buy Now

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Z11B Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
magnetic sensor circuit diagram Abstract: Magnetic Field Sensor linear displacement sensor specification MAGNETIC PROXIMITY SENSOR application note hx 36 KMZ11B1 MLC716 strong magnetic field sensor hx 002 Contextual Info: Philips Semiconductors Preliminary specification Magnetic field sensor Z11B1 DESCRIPTION The KM Z11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field	OCR Scan	KMZ11B1 KMZ11B1 Z11B1 magnetic sensor circuit diagram Magnetic Field Sensor linear displacement sensor specification MAGNETIC PROXIMITY SENSOR application note hx 36 MLC716 strong magnetic field sensor hx 002	PDF
Z14b Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.	Original	MRF374/D MRF374 Z14b Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B	PDF
M80062 Abstract: kmz110b Sm2CO17 scale sensor lte in philips philips hybrid "Angle Sensor" KMZ10B KMZ11B1 HYBRID SEMICONDUCTORS Contextual Info: N AMER P H I L I P S / D I S C R E T E b^E T> bbS3T31 0 0 3 2 7 0 M TÔT H A P X Philips Semiconductors Preliminary specification A n g le s e n s o r hybrid circu it K M 110B H /22 70 P IN N IN G F EA TU R E S • Angle measuring range 70° PIN • Contactless, therefore wear-free and no micro-linearity	OCR Scan	003270M KM110BH/2270 KMZ10B KMZ110BH/2270 M80062 kmz110b Sm2CO17 scale sensor lte in philips philips hybrid "Angle Sensor" KMZ11B1 HYBRID SEMICONDUCTORS	PDF
z18a Abstract: Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A Contextual Info: WILLAS DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6)	Original	GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 300K/W z18a Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A	PDF
Z18B Abstract: z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B Contextual Info: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.	Original	GLZJ56 MINI-MELF/LL-34 500mW MIL-STD-202E, 500mW 300K/W Z18B z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B	PDF
Z18B Abstract: Z33B Z36B Z15B Z30B Z5.1B zener diode z39b Z4.7B Z24B Z5.6B Contextual Info: MCC TM Micro Commercial Components PTZ3.6B THRU PTZ36B omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • Small surface mounting type. Voltage regulation and voltage limiting	Original	PTZ36B DO-214AC Z18B Z33B Z36B Z15B Z30B Z5.1B zener diode z39b Z4.7B Z24B Z5.6B	PDF
Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374/D MRF374 28rola,	PDF
z14b Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374/D MRF374 z14b RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A	PDF
RO3010 Abstract: C14A z14b Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374/D MRF374 MRF374/D RO3010 C14A z14b	PDF
zener gdzj marking Abstract: zener gdzj Contextual Info: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives	Original	GDZJ56 500mW 2011/65/EU DO-34 MIL-STD-750, DO-34 2014-REV zener gdzj marking zener gdzj	PDF
IR TK 2836 Abstract: zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2 Contextual Info: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER DO-35 Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes	Original	GDZJ56 DO-35 500mW MIL-STD-202G, DO-35 500mW 300K/W IR TK 2836 zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2	PDF
z6c8 Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b Contextual Info: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)	Original	GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 2012-REV RB500V-40 z6c8 Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b	PDF
marking 6a2 smd Abstract: zener Z11B Contextual Info: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C	Original	500mW 94Leakage marking 6a2 smd zener Z11B	PDF
RO3010 Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374 31JUL04 31JAN05 RO3010 Z14B C14A thermistor r5t 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b	PDF

z9b1 Abstract: Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D Contextual Info: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes	Original	GDZJ56 DO-35 500mW MIL-STD-202, DO-35 z9b1 Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D	PDF
Vj3640Y Abstract: transistor L1A Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device	Original	MRF374/D MRF374 Vj3640Y transistor L1A	PDF
6 pin hx Abstract: KMZ11B1 hx 36 Contextual Info: N AUER P H I L I P S / D I S C R E T E bbS3R31 b^ E » Philips Semiconductors 003277a bfl5 * A P X Preliminary specification Magnetic field sensor Z11B1 DESCRIPTION PIN CONFIGURATION The Z11B1 is a sensitive magnetic field sensor, employing the magneto	OCR Scan	bbS3R31 G03277fl KMZ11B1 KMZ11B1 MAM073-1 6 pin hx hx 36	PDF
Z18B Abstract: z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2 Contextual Info: WILLAS DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes	Original	GDZJ56 DO-35 500mW MIL-STD-202, DO-35 Z18B z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2	PDF
zener diode z15c Abstract: diode z6A2 Z18B Z5B6 z6c8 Contextual Info: GDZJ2.0~GDZJ56 PB FREE PRODUCT AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes	Original	GDZJ56 DO-35 500mW MIL-STD-202, DO-35 MAXIM00mW 300K/W zener diode z15c diode z6A2 Z18B Z5B6 z6c8	PDF
C13B Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this	Original	MRF374/D MRF374 C13B z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w	PDF
Z22A Abstract: Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b Contextual Info: DAT SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives	Original	GDZJ56 500mW 2002/95/EC DO-34 MIL-STD-750, DO-34 Z22A Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b	PDF
IR TK 2836 Abstract: z9b1 tk 2836 Z18A Z18B Z10C z15c Z30C Z33B z15b Contextual Info: GDZJ - SERIES 500mW EPITAXIAL ZENER DIODE FEATURES DO-34 • Planar die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability	Original	500mW DO-34 2002/95/EC MIL-STD-202G, 500mW 300K/W IR TK 2836 z9b1 tk 2836 Z18A Z18B Z10C z15c Z30C Z33B z15b	PDF
3TE445 Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159 Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group	OCR Scan	FJJ141/A 2305D FJJ181/A 2305E/848 FJJ191/A FJL101/A CD2306D FJY101/A 2306E/832 CD2307/944 3TE445 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159	PDF
z18a Abstract: Z22C Z15C Z22A Z30C Z27D Z10C z6c8 z15a Z15B Contextual Info: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.	Original	GLZJ56 MINI-MELF/LL-34 500mW 2002/95/EC MIL-STD-750, z18a Z22C Z15C Z22A Z30C Z27D Z10C z6c8 z15a Z15B	PDF

Z11B Search Results

Z11B Datasheets (7)

Z11B Price and Stock

Same Sky ACZ11BR1E-20FD1-12C

Nexperia PDZ11BF

Panasonic Electronic Components ALZ11B05W

Panasonic Electronic Components ALZ11B24W

PanJit Group PDZ11B_R1_00001

Z11B Datasheets Context Search

magnetic sensor circuit diagram

Z14b

M80062

z18a

Z18B

Z18B

z14b

RO3010

zener gdzj marking

IR TK 2836

z6c8

marking 6a2 smd

RO3010

z9b1

Vj3640Y

6 pin hx

Z18B

zener diode z15c

C13B

Z22A

IR TK 2836

3TE445

z18a