magnetic sensor circuit diagram
Abstract: Magnetic Field Sensor linear displacement sensor specification MAGNETIC PROXIMITY SENSOR application note hx 36 KMZ11B1 MLC716 strong magnetic field sensor hx 002
Contextual Info: Philips Semiconductors Preliminary specification Magnetic field sensor Z11B1 DESCRIPTION The KM Z11B1 is a sensitive magnetic field sensor, employing the magnetoresistive effect of thin-film permalloy. Its properties enable this sensor to be used in a wide range of applications for current and field
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kmz11b1z11b1magnetic sensor circuit diagrammagnetic field sensor+6linear displacement sensor specificationmagnetic proximity sensor application notehx 36mlc716strong magnetic field sensorhx 002
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Z14b
Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.
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mrf374/dmrf374z14bz10a+8z12bz10bz11br1a transistorc14aro3010c12ac12b
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M80062
Abstract: kmz110b Sm2CO17 scale sensor lte in philips philips hybrid "Angle Sensor" KMZ10B KMZ11B1 HYBRID SEMICONDUCTORS
Contextual Info: N AMER P H I L I P S / D I S C R E T E b^E T> bbS3T31 0 0 3 2 7 0 M TÔT H A P X Philips Semiconductors Preliminary specification A n g le s e n s o r hybrid circu it K M 110B H /22 70 P IN N IN G F EA TU R E S • Angle measuring range 70° PIN • Contactless, therefore wear-free and no micro-linearity
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003270mkm110bh/2270kmz10bkmz110bh/2270+9m80062kmz110bsm2co17scale sensorlte in philipsphilips hybridangle sensorkmz11b1hybrid semiconductors
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z18a
Abstract: Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A
Contextual Info: WILLAS DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6)
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glzj56mini-melf/ll-34500mwmil-std-202e+11300k/wz18az18bz12bz13cz51 zener diodez13az6c8z15az36cz22a
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Z18B
Abstract: z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B
Contextual Info: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.
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glzj56mini-melf/ll-34500mwmil-std-202e+11300k/wz18bz9b1z10cz10dz6c2z51 zener diodez30cz6b8z10az10b
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Z18B
Abstract: Z33B Z36B Z15B Z30B Z5.1B zener diode z39b Z4.7B Z24B Z5.6B
Contextual Info: MCC TM Micro Commercial Components PTZ3.6B THRU PTZ36B omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • Small surface mounting type. Voltage regulation and voltage limiting
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ptz36bdo-214acz18bz33b+8z36bz15bz30bz5.1bzener diode z39bz4.7bz24bz5.6b
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Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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mrf374/dmrf37428rola |
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z14b
Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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mrf374/dmrf374z14bro3010+7c14ac12ac12bc13br1a transistorvj2225yz14a
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RO3010
Abstract: C14A z14b
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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mrf374/dmrf374ro3010c14a+1z14b
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zener gdzj marking
Abstract: zener gdzj
Contextual Info: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives
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gdzj56500mw2011/65/eudo-34+4mil-std-7502014-revzener gdzj markingzener gdzj
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IR TK 2836
Abstract: zener diode z39b Z10A Z10C Z33B z6c2 Z15C Z18A Z16B diode z6A2
Contextual Info: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER DO-35 Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes
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gdzj56do-35500mwmil-std-202g+11300k/wir tk 2836zener diode z39bz10az10cz33bz6c2z15cz18az16bdiode z6a2
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z6c8
Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
Contextual Info: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)
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gdzj56500mw2002/95/ecdo-34+13mil-std-7502012-revrb500v-40z6c8z11az22dz9b1zener z27bz20bz13ctype marking code 30c 500mwz12cz10b
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marking 6a2 smd
Abstract: zener Z11B
Contextual Info: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C
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500mw94leakagemarking 6a2 smdzener z11b |
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RO3010
Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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mrf37431jul0431jan05ro3010+8z14bc14athermistor r5t470 860 mhz pcbtransistor r1ac14br1a transistortransistor z2b
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z9b1
Abstract: Z18B Z13C z3B0 Z33B Z22A Z22D Z24B z33a Z11D
Contextual Info: DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes
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gdzj56do-35500mwmil-std-202+10z9b1z18bz13cz3b0z33bz22az22dz24bz33az11d
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Vj3640Y
Abstract: transistor L1A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device
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mrf374/dmrf374vj3640ytransistor l1a |
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6 pin hx
Abstract: KMZ11B1 hx 36
Contextual Info: N AUER P H I L I P S / D I S C R E T E bbS3R31 b^ E » Philips Semiconductors 003277a bfl5 * A P X Preliminary specification Magnetic field sensor Z11B1 DESCRIPTION PIN CONFIGURATION The Z11B1 is a sensitive magnetic field sensor, employing the magneto
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bbs3r31g03277flkmz11b1mam073-1+26 pin hxhx 36
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Z18B
Abstract: z9b1 z18a Z15B Z33B Z27B z3b0 Z18C Z15C z6c2
Contextual Info: WILLAS DATA SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes
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gdzj56do-35500mwmil-std-202+10z18bz9b1z18az15bz33bz27bz3b0z18cz15cz6c2
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zener diode z15c
Abstract: diode z6A2 Z18B Z5B6 z6c8
Contextual Info: GDZJ2.0~GDZJ56 PB FREE PRODUCT AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE DO-35 500 mWatts POWER Unit: inch mm FEATURES .020(0.52)TYP. 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes
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gdzj56do-35500mwmil-std-202+7maxim00mw300k/wzener diode z15cdiode z6a2z18bz5b6z6c8
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C13B
Abstract: z14b c18a C14A C12A C12B MRF374 RO3010 Z10A RF POWER VERTICAL MOSFET 1000 w
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this
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mrf374/dmrf374c13bz14b+7c18ac14ac12ac12bro3010z10arf power vertical mosfet 1000 w
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Z22A
Abstract: Z18B Z30C GDZJ12B Z12B Z18A Z15B DAT 1018 P Z10C zener z27b
Contextual Info: DAT SHEET GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives
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gdzj56500mw2002/95/ecdo-34+11mil-std-750z22az18bz30cgdzj12bz12bz18az15bdat 1018 pz10czener z27b
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IR TK 2836
Abstract: z9b1 tk 2836 Z18A Z18B Z10C z15c Z30C Z33B z15b
Contextual Info: GDZJ - SERIES 500mW EPITAXIAL ZENER DIODE FEATURES DO-34 • Planar die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • High temperature soldering : 260°C /10 seconds at terminals • Glass package has Underwriters Laboratory Flammability
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500mwdo-342002/95/ecmil-std-202g+11300k/wir tk 2836z9b1tk 2836z18az18bz10cz15cz30cz33bz15b
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3TE445
Abstract: 2N3303 ECC88 TAA*310 B9D TRANSISTOR BYY32 GEX36/7 Ferranti zs70 6ej7 3n159
Contextual Info: Radio Valve and Transistor Data Characteristics of 3,000 Valves and Cathode Ray Tubes, 4, 500 Transistors, Diodes, Rectifiers and Integrated Circuits Compiled by A.M.Ball First published February 1949 Ninth Edition published in 1970 by Iliffe Books, an imprint of the Butterworth Group
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fjj141/a2305dfjj181/a2305e/848+16fjj191/afjl101/acd2306dfjy101/a2306e/832cd2307/9443te4452n3303ecc88taa*310b9d transistorbyy32gex36/7ferranti zs706ej73n159
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z18a
Abstract: Z22C Z15C Z22A Z30C Z27D Z10C z6c8 z15a Z15B
Contextual Info: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.
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glzj56mini-melf/ll-34500mw2002/95/ec+11mil-std-750z18az22cz15cz22az30cz27dz10cz6c8z15az15b
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