31JAN05 Search Results

MRF186

Contextual Info: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

MRF186

Abstract: C10B4 motorola MOSFET 935 Z11-Z16 RF power amplifier MHz MRF186 equivalent
Contextual Info: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

gps transmitter circuit diagram

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

Contextual Info: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device

MRF185

Abstract: transistor motorola 246
Contextual Info: MOTOROLA Order this document by MRF185/D The RF MOSFET Line LAST SHIP 31JAN05 MRF185 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET • High Gain, Rugged Device • Broadband Performance from HF to 1 GHz • Bottom Side Source Eliminates DC Isolators, Reducing Common Mode

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device

2.4 ghz 2 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM

Abstract: 2.4 ghz 5 WATTS POWER AMPLIFIER SCHEMATIC DIAGRAM MRF186 9601 mosfet
Contextual Info: MOTOROLA Order this document by MRF186/D The RF MOSFET Line LAST SHIP 31JAN05 MRF186 RF Power Field-Effect Transistor N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 800 MHz to 1.0 GHz. The high gain and broadband performance of this

MRF185

Contextual Info: MOTOROLA Order this document by MRF185/D The RF MOSFET Line N–Channel Enhancement–Mode Lateral MOSFET LAST SHIP 31JAN05 MRF185 RF POWER Field-Effect Transistor 85 WATTS, 1.0 GHz 28 VOLTS LATERAL N–CHANNEL BROADBAND RF POWER MOSFET • High Gain, Rugged Device

TSAL6200

Abstract: TSOP322 TSOP32230 TSOP32233 TSOP32236 TSOP32237 TSOP32238
Contextual Info: TSOP322. Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP322. - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

TSAL6200

Abstract: TSOP2230SA1 TSOP2233SA1 TSOP2236SA1
Contextual Info: TSOP22.SA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.SA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

ARLON-GX-0300-55-22

Abstract: Motorola MRF183 MRF183R1 MRF183S MRF183SR1
Contextual Info: MOTOROLA Order this document by MRF183/D SEMICONDUCTOR TECHNICAL DATA MRF183R1 MRF183SR1 N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: TSOP22.UH1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.UH1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

TSOP2256Y

Contextual Info: TSOP22.YA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.YA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

Contextual Info: TSOP22.SA1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.SA1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

Contextual Info: TSOP22.AY1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.AY1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

Contextual Info: TSOP341.LL1 Vishay Semiconductors Photo Modules for PCM Remote Control Systems Description The TSOP341.LL1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

TSAL6200

Abstract: TSOP2230NN1 TSOP2233NN1 TSOP2236NN1 TSOP2237NN1 TSOP2238NN1 TSOP2240NN1 TSOP2256NN1
Contextual Info: TSOP22.NN1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.NN1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

TSAL6200

Abstract: TSOP2230ZC1 TSOP2233ZC1 TSOP2236ZC1 TSOP2237ZC1 TSOP2238ZC1 TSOP2240ZC1 TSOP2256ZC1
Contextual Info: TSOP22.ZC1 Vishay Semiconductors IR Receiver Modules for Remote Control Systems Description The TSOP22.ZC1 - series are miniaturized receivers for infrared remote control systems. PIN diode and preamplifier are assembled on lead frame, the epoxy package is designed as IR filter.

c19a

Abstract: motorola rf power chip resistor 1206 BUY13 C14A LDMOS push pull MRF373 MRF373 PUSH PULL MRF373R1 MRF373SR1
Contextual Info: MOTOROLA RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of these devices make them ideal for large–signal, common source amplifier applications in 28 volt transmitter equipment.

MRF6522-5

Abstract: MOSFET J132 mosfet j142 J132 mosfet 5r1 mosfet transistor transistor zo 607 ZO 607 MA MRF6522-5R1 smd transistor 2x 4 581 transistor motorola
Contextual Info: MOTOROLA RF Power Field Effect Transistor MRF6522-5R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A and Class AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–5R1 has been specifically designed for use in Communications Network GSM base stations. The

Contextual Info: MOTOROLA The RF MOSFET Line MRF183 MRF183S MRF183SR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to 1.0 GHz. The high gain and broadband performance of these devices

Contextual Info: MOTOROLA Order this document by MRF6522–10/D SEMICONDUCTOR TECHNICAL DATA MRF6522-10R1 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for Class A–AB common source, linear power amplifiers in the 960 MHz range. The MRF6522–10R1 has been specifically designed for use

SI8407DB

Abstract: 8902E Si8902EDB
Contextual Info: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB Si8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 Si8902EDB T2 Device on Tape Orientation 8902E

292D

Abstract: 40KHZ ULTRASONIC Power 60 watts dimensions IEC-384-3 292D3
Contextual Info: 292D Vishay Sprague Solid Tantalum Chip Capacitors, Tantamount Lead Frameless Molded FEATURES • 0805 Footprint • Wraparound lead Pb -free terminations: P and R Cases • 8mm tape and reel packaging available per EIA-481-1 and reeling per IEC 286-3. 7” [178mm] standard.