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    8902E Search Results

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    Vishay Intertechnologies SI8902EDB-T2-E1

    - Tape and Reel (Alt: SI8902EDB-T2-E1)
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    Avnet Americas SI8902EDB-T2-E1 Tape & Reel 3,000
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    Bristol Electronics SI8902EDB-T2-E1 1,999 1
    • 1 $1.84
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    • 100 $1.14
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    Component Electronics, Inc SI8902EDB-T2-E1 50
    • 1 $1.15
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    Analog Devices Inc MAX38902EVKIT#

    Eval Board, Ldo Voltage Regulator; |Analog Devices, Inc. MAX38902EVKIT#
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    Newark MAX38902EVKIT# Bulk 1 1
    • 1 $90.36
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    Analog Devices Inc MAX38902EEVKIT#

    Eval Kit, Low Noise Linear Regulator; |Analog Devices, Inc. MAX38902EEVKIT#
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    Newark MAX38902EEVKIT# Bulk 1 1
    • 1 $93.72
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    Vishay Intertechnologies 781-SI8902EDB-T2-E1

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    Bristol Electronics 781-SI8902EDB-T2-E1 85
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    Analog Devices Inc 5962-8778902EA

    DAC 1-CH R-2R/Current Steering 8-bit 16-Pin SBCDIP Tube
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    Bristol Electronics 5962-8778902EA 3 1
    • 1 $136.98
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    Vyrian 5962-8778902EA 7,840
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    8902E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI8407DB

    Abstract: 8902E Si8902EDB
    Contextual Info: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB 8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 8902EDB T2 Device on Tape Orientation 8902E


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    si8407dbsi8902edb275-mm8902e PDF

    Si8902EDB-T2-E1

    Abstract: Si8902EDB t2 955 e S8304
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    si8902edb18-jul-08si8902edb-t2-e1t2 955 e+1s8304 PDF

    8902E

    Abstract: J-STD-020A Si8902EDB
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    si8902edb8902e08-apr-05j-std-020a PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    si8902edb8902e2011/65/eu2002/95/ec+112-mar-12 PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    si8902edb8902e63sn/37pbs-40861--rev+103-may-04 PDF

    Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    si8902edb8902e63sn/37pbs-20616--rev+113-may-02 PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original
    si8902edb2002/95/ec2011/65/eujs709a+102-oct-12 PDF

    J-STD-020A

    Abstract: Si8902EDB
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    si8902edb8902es-50066--rev17-jan-05+1j-std-020a PDF

    Si8902EDB

    Abstract: J-STD-020A
    Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    si8902edb8902e63sn/37pbs-20802--rev+201-jul-02j-std-020a PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original
    si8902edb2011/65/eu2002/95/ec12-mar-12 PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    si8902edb8902e11-mar-11 PDF

    Si8407DB

    Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
    Contextual Info: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3


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    si8401dbdg3000dbsi8405dbdg3001db+8si8407dbdg3408dbsi8900edbdg3409dbsi8902edbs-31635--revvishay siliconixof 8407 PDF

    J-STD-020A

    Abstract: Si8902EDB
    Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original
    si8902edb8902e63sn/37pbs-21337--rev+205-aug-02j-std-020a PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • TrenchFET Power MOSFET


    Original
    si8902edb8902e18-jul-08 PDF

    Contextual Info: 8902EDB Vishay Siliconix New Product Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


    Original
    si8902edb8902e63sn/37pbs-31863--rev+115-sep-03 PDF

    Si8902EDB

    Abstract: Si8902EDB-T2-E1
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


    Original
    si8902edb11-mar-11si8902edb-t2-e1 PDF