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    8902E Search Results

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    Vishay Intertechnologies SI8902EDB-T2-E1

    - Tape and Reel (Alt: SI8902EDB-T2-E1)
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    Avnet Americas SI8902EDB-T2-E1 Tape & Reel 3,000
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    Mouser Electronics SI8902EDB-T2-E1
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    Bristol Electronics SI8902EDB-T2-E1 1,999 1
    • 1 $1.84
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    • 100 $1.14
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    Component Electronics, Inc SI8902EDB-T2-E1 50
    • 1 $1.15
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    Analog Devices Inc MAX38902EVKIT#

    EVAL BOARD, LDO VOLTAGE REGULATOR;
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    Newark MAX38902EVKIT# Bulk 1 1
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    Analog Devices Inc MAX38902EVKIT# 10
    • 1 $113.08
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    Analog Devices Inc MAX38902EEVKIT#

    EVAL KIT, LOW NOISE LINEAR REGULATOR;
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    Newark MAX38902EEVKIT# Bulk 1 1
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    Analog Devices Inc MAX38902EEVKIT# 34
    • 1 $113.08
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    Analog Devices Inc MAX38902EATA+

    LDO, ADJ, 0.8-5V, 0.5A, -40 TO 125DEG C; Output Type:Adjustable; Input Voltage Min:1.7V; Input Voltage Max:5.5V; No. of Outputs:1Outputs; Output Voltage - Nom:-; Output Voltage Min:800mV; Output Voltage Max:5V; IC Case / Package:TDFNRoHS Compliant: Yes
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    Newark MAX38902EATA+ Cut Tape 1
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    Analog Devices Inc MAX38902EATA+ 12,988
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    Vyrian MAX38902EATA+ 7,173
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    Analog Devices Inc MAX8902EVKIT+

    Eval Kit MAX8902A and MAX8902B
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    Analog Devices Inc MAX8902EVKIT+ 9
    • 1 $98.60
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    8902E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    SI8407DB

    Abstract: 8902E Si8902EDB
    Contextual Info: Device Orientation—MICRO FOOTr Packages Vishay Siliconix Device Orientation Options for MOSFETs Part Numbers: Si8407DB 8902EDB MICRO FOOTr 2X3: 0.8-mm PITCH, 0.275-mm BUMP HEIGHT Part Number Method Si8407DB T2 8902EDB T2 Device on Tape Orientation 8902E


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    Si8407DB Si8902EDB 275-mm 8902E 8902E PDF

    Si8902EDB-T2-E1

    Abstract: Si8902EDB t2 955 e S8304
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 18-Jul-08 Si8902EDB-T2-E1 t2 955 e S8304 PDF

    8902E

    Abstract: J-STD-020A Si8902EDB
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 08-Apr-05 8902E J-STD-020A PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 8902E 63Sn/37Pb S-40861--Rev. 03-May-04 PDF

    Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 8902E 63Sn/37Pb S-20616--Rev. 13-May-02 PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 PDF

    J-STD-020A

    Abstract: Si8902EDB
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E S-50066--Rev. 17-Jan-05 J-STD-020A PDF

    Si8902EDB

    Abstract: J-STD-020A
    Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 63Sn/37Pb S-20802--Rev. 01-Jul-02 J-STD-020A PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 8902E 8902E 11-Mar-11 PDF

    Si8407DB

    Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
    Contextual Info: Device Orientation—MICRO FOOTrPackages Vishay Siliconix Part Number Index APPENDIX AĊMOSFETS Part Number APPENDIX BĊANALOG ICS Appendix Part Number Appendix Si8401DB A -1 DG3000DB B -1 Si8405DB A -1 DG3001DB B -2 Si8407DB A -2 DG3408DB B -3 Si8900EDB A -3


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    Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB PDF

    J-STD-020A

    Abstract: Si8902EDB
    Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 63Sn/37Pb S-21337--Rev. 05-Aug-02 J-STD-020A PDF

    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • TrenchFET Power MOSFET


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    Si8902EDB 8902E 8902E 18-Jul-08 PDF

    Contextual Info: 8902EDB Vishay Siliconix New Product Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET


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    Si8902EDB 8902E 8902E 63Sn/37Pb S-31863--Rev. 15-Sep-03 PDF

    Si8902EDB

    Abstract: Si8902EDB-T2-E1
    Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21


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    Si8902EDB 11-Mar-11 Si8902EDB-T2-E1 PDF