8902E Search Results
8902E Price and Stock
Vishay Intertechnologies SI8902EDB-T2-E1- Tape and Reel (Alt: SI8902EDB-T2-E1) |
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SI8902EDB-T2-E1 | Tape & Reel | 3,000 |
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SI8902EDB-T2-E1 |
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SI8902EDB-T2-E1 | 1,999 | 1 |
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SI8902EDB-T2-E1 | 50 |
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Analog Devices Inc MAX38902EVKIT#EVAL BOARD, LDO VOLTAGE REGULATOR; |
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MAX38902EVKIT# | Bulk | 1 | 1 |
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MAX38902EVKIT# | 10 |
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Analog Devices Inc MAX38902EEVKIT#EVAL KIT, LOW NOISE LINEAR REGULATOR; |
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MAX38902EEVKIT# | Bulk | 1 | 1 |
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MAX38902EEVKIT# | 34 |
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Analog Devices Inc MAX38902EATA+LDO, ADJ, 0.8-5V, 0.5A, -40 TO 125DEG C; Output Type:Adjustable; Input Voltage Min:1.7V; Input Voltage Max:5.5V; No. of Outputs:1Outputs; Output Voltage - Nom:-; Output Voltage Min:800mV; Output Voltage Max:5V; IC Case / Package:TDFNRoHS Compliant: Yes |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MAX38902EATA+ | Cut Tape | 1 |
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MAX38902EATA+ | 12,988 |
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MAX38902EATA+ | 7,173 |
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Analog Devices Inc MAX8902EVKIT+Eval Kit MAX8902A and MAX8902B |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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MAX8902EVKIT+ | 9 |
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8902E Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SI8407DB
Abstract: 8902E Si8902EDB
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Si8407DB Si8902EDB 275-mm 8902E 8902E | |
Si8902EDB-T2-E1
Abstract: Si8902EDB t2 955 e S8304
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Si8902EDB 18-Jul-08 Si8902EDB-T2-E1 t2 955 e S8304 | |
8902E
Abstract: J-STD-020A Si8902EDB
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Si8902EDB 8902E 08-Apr-05 8902E J-STD-020A | |
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Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21 |
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Si8902EDB 8902E 8902E 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET |
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Si8902EDB 8902E 8902E 63Sn/37Pb S-40861--Rev. 03-May-04 | |
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Contextual Info: 8902EDB New Product Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VSS (V) 20 rSS(on) (W) ISS (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET |
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Si8902EDB 8902E 8902E 63Sn/37Pb S-20616--Rev. 13-May-02 | |
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Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21 |
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Si8902EDB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12 | |
J-STD-020A
Abstract: Si8902EDB
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Si8902EDB 8902E S-50066--Rev. 17-Jan-05 J-STD-020A | |
Si8902EDB
Abstract: J-STD-020A
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Si8902EDB 8902E 63Sn/37Pb S-20802--Rev. 01-Jul-02 J-STD-020A | |
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Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21 |
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Si8902EDB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • • Halogen-free According to IEC 61249-2-21 |
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Si8902EDB 8902E 8902E 11-Mar-11 | |
Si8407DB
Abstract: Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB Si8401DB Si8405DB Si8900EDB
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Si8401DB DG3000DB Si8405DB DG3001DB Si8407DB DG3408DB Si8900EDB DG3409DB Si8902EDB S-31635--Rev. Vishay Siliconix of 8407 DG3000DB DG3001DB DG3408DB DG3409DB | |
J-STD-020A
Abstract: Si8902EDB
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Si8902EDB 8902E 63Sn/37Pb S-21337--Rev. 05-Aug-02 J-STD-020A | |
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Contextual Info: 8902EDB Vishay Siliconix Bi-Directional N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VS1S2 (V) 20 RS1S2(on) (Ω) IS1S2 (A) 0.045 at VGS = 4.5 V 5.0 0.048 at VGS = 3.7 V 4.8 0.057 at VGS = 2.5 V 4.4 0.072 at VGS = 1.8 V 3.9 • • • • TrenchFET Power MOSFET |
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Si8902EDB 8902E 8902E 18-Jul-08 | |
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Contextual Info: 8902EDB Vishay Siliconix New Product Bi-Directional N-Channel 20-V D-S MOSFET FEATURES D D D D PRODUCT SUMMARY VS1S2 (V) 20 rS1S2(on) (W) IS1S2 (A) 0.045 @ VGS = 4.5 V 5.0 0.048 @ VGS = 3.7 V 4.8 0.057 @ VGS = 2.5 V 4.4 0.072 @ VGS = 1.8 V 3.9 TrenchFETr Power MOSFET |
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Si8902EDB 8902E 8902E 63Sn/37Pb S-31863--Rev. 15-Sep-03 | |
Si8902EDB
Abstract: Si8902EDB-T2-E1
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Si8902EDB 11-Mar-11 Si8902EDB-T2-E1 | |