Z10D Search Results

Z15D121

Abstract: Z10D391 Z15D361 Z15D331 V36AT Z15D391
Contextual Info: Z10D Series Specifications Part No. Z10D180 Z10D220 Z10D270 Z10D330 Z10D390 Z10D470 Z10D560 Z10D680 * Z10D820 * Z10D101 * Z10D121 * Z10D151 * Z10D201 * Z10D221 * Z10D241 * Z10D271 * Z10D331 * Z10D361 * Z10D391 * Z10D431 * Z10D471 * Z10D511 * Z10D561 * Z10D681

Z10D471

Abstract: Z10D201 Z10D330 Z10D331 Z10D820 Z10D821 Z10D221 Z10D470 Z10D361 Z10D561
Contextual Info: ゼナミック98/1 98.2.20 3:28 AM ページ 12 定 格 Z10D 定 格 Z10D180~680 最大許容回路電圧 AC DC Vrms V 11 14 14 18 17 22 20 26 25 31 30 38 35 45 40 56 最大制限電圧 V5A V 36 43 53 65 77 93 110 135 最大平均 パルス電力 W

VCR-10D241K

Abstract: VCR10D431K VCR-10D471K VCR-10D391K VCR10D241K VCR10D391K VCR-10D201K vcr10d201k VCR-10D431K vcr10d471k
Contextual Info: METAL OXIDE VARISTORS Transient voltage surge suppressors z10D Series Maximum Allowable Voltage Part Number Varistor Voltage Clamping Maximum Voltage Peak current MAX. (8/20µs) Maximum Energy (10/1000µs) High High Standard Surge Surge (A) (JOULE) Typical

208H

Contextual Info: Schematic: E IG H T PORT r' 1:1 CT 10 - MODULAR RJ45 JACK 9 o- 5 o8 o- 7 o6 o4 o- 3 o2 o- 1 o- L. .J E lectrica l S p ecifica tio n s: @25*0 ISOLATION; 15(10 Vrms TURN5 RATIO: (PRI/5EC) 1:1 CT ± 2 X OCL: 350uH MIN <9100KHz lOOmV SmADC DCR: P 5 - J 7 and P 5 - J 8 mismatch, 3% Max

op03

Contextual Info: S c h e m a t ic : E le c t r ic a l S p e c if ic a t io n s : 25°C TURNS RATIO: TX 1CT:1±3%, RX 1CT:1±3% Isolation V oltage: 1500 Vrm s INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz 100m V 8mADC Insertion Loss (1 MHz—100MHz): —1.1 dB Max Return Loss: - 1 8 d B

Contextual Info: 1. Mechanical Dimensions: 1 . 0 4 5 3. Electrical Specifications: 25DC -0 .3 0 5 M ax ISOLATION: 1500Vrm s TURNS RATIO: PR I/SEC Max 1 DOmV, BmAdc Rise Time: 5ns Max. 2 O 1CT:1CT ±2% SEC OCL: 3 5 0 uH Min @ 100KH z X Ö 004 Min lO S 0' O n INSERTION LOSS: -1.1 dB MAX @1 M H z-10DM H z

Contextual Info: S c h e m a t ic : E le c t r ic a l S p e c if ic a t io n s : 25°C TURNS RATIO: TX 1CT:1±3%, RX 1CT:1±3% Isolation V oltage: 1500 Vrm s INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz 100m V 8mADC Insertion Loss (1 MHz—100MHz): —1.1 dB Max Return Loss: - 1 8 d B

NTC 10D-9

Abstract: smd zener diode color band Varistor 4D-22 ntc 5D-11 5d-11 power thermistor ntc 8D-13 varistor 5D-11 TRANSISTOR SMD MARKING CODE 1P NTC 16D-13 NTC 8D-11
Contextual Info: PRODUCT CATALOG CAT. No.129E SURGE ABSORBERS SENSORS AND MODULES THERMISTORS NON-CONTACT SENSOR 4 THERMOPILE NC SENSOR THERMISTOR 6 HIGH PRECISION SERIES SMD SERIES HIGH HEAT-RESISTANCE SERIES DISK SERIES SENSORS POWER THERMISTOR 21 D-TYPE SERIES MARK SERIES

z18a

Abstract: Z18B Z12B Z13C Z51 zener diode Z13A z6c8 z15A Z36C Z22A
Contextual Info: WILLAS DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6)

ZENAMIC VARISTOR

Abstract: zenamic Z15D121 zenamic 220 Z15D151 Z10D471 Z7D431 Z10D391 Z7D221 Z15D431
Contextual Info: ZENAMIC METAL OXIDE VARISTOR ZENAMIC is the product name of a metal oxide varistor. ZENAMIC Transient/Surge Absorber, Series D is newly released through our continued research in ceramic material composition of ZnO varistor and manufacturing process, featuring large surge current handling

Z18B

Abstract: z9b1 Z10C Z10D z6c2 Z51 zener diode Z30C Z6b8 Z10A Z10B
Contextual Info: DATA SHEET GLZJ2.0~GLZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts MINI-MELF/LL-34 500 mWatts POWER Unit : inch mm FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes .063(1.6) .055(1.4)DIA.

Contextual Info: METAL OXIDE VARISTOR SERIES"D" ZENAMIC ZENAMIC is the product name of a metal oxide varistor. ZENAMIC Transient / Surge Absorber, Series D is newly released through our continued research in ceramic material composition of ZnO varistor and manufacturing process,

Contextual Info: S ch e m atic: F o u r P o r t T ' 1CT: 1CT 1 .J ISOLATION; 1 5 0 0 V rm s ( s e e TURNS RATIO! (P R I/S E C ) N otes) 1CT:1CT ± 3 % OCL: 350uH MIN 1 0 0 K H z 10DmV BmADC Rise Timer 1.75ns Max, INSERTION LOSS: -1 .0 d B MAX @ 1M H z-10D M H z —1.5dB MAX @ 1 0 0 —125MHz

208H

Contextual Info: S ch e m a tic : SING LE PORT r ' 1:1 CT MODULAR RJ45 JACK 10 - 9 o- 5 o8 o- 7 o- 6 o4 o3 o2 o- 1 o- .j L. E le c t r ic a l S p e c if ic a t io n s : @ 25*0 ISOLATION; 15(10 V rm s TURN5 RATIO: (P R I/5E C ) 1:1 CT ±2X OCL: 350uH MIN <9100KHz lOOmV SmADC

zener gdzj marking

Abstract: zener gdzj
Contextual Info: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2 to 56 Volt VOLTAGE POWER 500 mWatt FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Lead free in compliance with EU RoHS 2011/65/EU directives

SNP-Z101

Abstract: SNP-Z103 SNP-Z109 Z109 snp-z107 Z107 SNP-Z10T Z103 SNP-Z10 SNPZ10
Contextual Info: General Purpose Universal PFC + 100W SNP-Z10 Series Description: Open frame size of 3" X 5" has become an industrial standard for more than 10 years. The power density is around 2.0 watts/ cu.in. at very beginning and then stays at 3.0 watts/cu.in. for a

Contextual Info: 3 E Z 3.9D 5 thru 3EZ200D5 Microsemi Corp. $ The û«xa» experts SCOTTSDALE, AZ For more information call: m m s m im s m 602 941-6300 SILICON 3 WATT ZENER DIODE FEATURES • ZENER VOLTAGE 3 .9V to 200 V • HIGH SURGE CURRENT RATING • 3 W ATTS DISSIPATION IN A N O RM ALLY 1 W ATT PACKAGE

7D680

Abstract: 5d471 5D680 ZENAMIC VARISTOR 20S100
Contextual Info: ZENAMIC Reliability Characteristics Test Methods/Descriptions Criterion Standard Test Condition Unless other wise specified, electrical measurements initial/aftertests shall be conducted at temperature of 5 to 35ЊC,relative humidity of 45 to 85% and atmospheric pressure of 860 to 1060 hPa.

z6c8

Abstract: Z11A Z22D z9b1 zener z27b Z20B Z13C type marking code 30C 500mw Z12C z10b
Contextual Info: GDZJ2.0~GDZJ56 AXIAL LEAD ZENER DIODES 2.0 to 56 Volts VOLTAGE POWER 500 mWatts FEATURES 0.018 0.45 0.014(0.35) 1.02(26.0)MIN. • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes 0.116(2.9) 0.092(2.3)

marking 6a2 smd

Abstract: zener Z11B
Contextual Info: SMD Zener Diodes Leadless - 500mW 500mW Marking Code Part No. TLZJ2.0A TLZJ2.0B TLZJ2.2A TLZJ2.2B TLZJ2.4A TLZJ2.4B TLZJ2.7A TLZJ2.7B TLZJ3.0A TLZJ3.0B TLZJ3.3A TLZJ3.3B TLZJ3.6A TLZJ3.6B TLZJ3.9A TLZJ3.9B TLZJ4.3A TLZJ4.3B TLZJ4.3C TLZJ4.7A TLZJ4.7B TLZJ4.7C

Varistor 4D-22

Abstract: 6D-22 Varistor 103AT-11 varistor 5D-11 metal oxide varistor 4d-22 5d-11 power thermistor NTC 8D-11 varistor 5D-13 NTC 16D-13 MELF DIODE color band brown
Contextual Info: PRODUCT CATALOG CAT. No.129A SURGE ABSORBERS SENSORS AND MODULES THERMISTORS THERMISTOR 4 HIGH PRECISION SERIES SMD SERIES HIGH HEAT-RESISTANCE SERIES DISK SERIES SENSORS POWER THERMISTOR 20 POWER THERMISTOR SERIES MARK SERIES VRD TRANSIENT VOLTAGE SUPPRESSOR

3DDB

Contextual Info: S c h e m a tic : S in g le P o r t IC T 1IC T T ' 1 .J B O L A T ID N : 1500 V r m 3 <5 = = N o t e s ) TURNS RATIO! (P R I/S E C ) 1CT:1CT ± 3 % OCL: 350uH MIN O lOOKHz 100m V SmADC Rise Timer 1.75ns Max, INSERTION LOSS: -1 .0 d B MAX @ 1M H z-10D M H z

1112-T

Abstract: XFATM13B-STACK4-4
Contextual Info: S c h e m a t ic : E le c t r ic a l S p e c if ic a t io n s : 25°C TURNS RATIO: TX 1CT:1±3%, RX 1CT:1±3% Isolation Voltage: 1500 Vrm s INPUT to OUTPUT UTP SIDE OCL: 350uH Min @100KHz 100m V 8mADC Insertion Loss (1 MHz— 100MHz): — 1.1 dB Max Return Loss: - 1 8 d B

1N23 diode

Abstract: SINGLE ENDED MIXER 1N23 ALPHA 1N23 Diode Holder surface mount zero-bias detector diode silicon di for microwave diode mixer x-band motion detector metal diode Silicon Point Contact Mixer Diodes zero bias diode
Contextual Info: Application Note 80800: Mixer and Detector Diodes 2. BONDED CONTACT This construction features a gold wire bonded from the rim of the package to a bonding pad on the chip and then to the rim opposite the first bond. A cap is then soldered to this rim thus completing the assembly and