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    1N23 diode

    Abstract: 1N23 1N53AR 1n3747 1N1132 1N53R 1N415C 1n415 1N26 1N23 ALPHA
    Text: – 0SflSMM3 OOOllbM 3fi3 WkkLVT^-cQ Silicon Point Contact Mixer Diodes S-Band Type Number NP dB Max , SEMICONDUCTOR MAE D ■0565443 DDDllb5 2IT ■ALPT~£>7-t>7 Silicon Point Contact Mixer Diodes S-X Band , mM?T'07'l>7 Silicon Point Contact Mixer Diodes Ku- Band Type Number NP dB Max. Package Outline , ODDllbfi TBT ■ALP Silicon Point Contact Mixer Diodes K-Band Type Number NP dB Max. Package , ^ TbS ■A L P 7*37-^7 Silicon Point Contact Mixer Diodes Typical X-Band Mixer Diode Forward Voltage


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    1N23 diode

    Abstract: 1N78 diode 1N23WGMR 1N26A diode 1n21we 1N26B ka2to 1N415 DMA4148-042 1n23 jan
    Text: Silicon Point Contact Mixer Diodes Features High Burnout Resistance Low Noise Figure, even in , 2-75 Silicon Point Contact Mixer Diodes S-B and Type Number Polarity Matched Pairs Two , Silicon Point Contact Mixer Diodes S-X Band Type Number Polarity Matched Pairs Two ForwardPolarity , 12 9.4 16.0 24.0 35.0 mW 0.5 1.0 1.0 1.0 1.0 1.0 2-77 Silicon Point Contact Mixer Diodes X , 2-78 Silicon Point Contact Mixer Diodes Ku- Band Type Number Polarity Matched Pairs Two


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    1N23 diode

    Abstract: 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR
    Text: EBAlpha Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series , : (617) 935-5150 · FAX: (617) 935-4939 Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX , Silicon Point Contact Mixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series K u -B an d Part , Sealed Description Alpha's point contact mixer diodes are designed for applications through Ka-band , Silicon Point Contact M ixer Diodes 1N2XX, 1N3205,1N25XX, 1N78X, DMA649X-XXX Series Typical


    OCR Scan     		PDF 1N3205 1N25XX, 1N78X, DMA649X-XXX 1N23 diode 1N53AR 1N26A diode Silicon Point Contact Mixer Diodes 1N415 1N832A N178 kaba 1N23WG 1N26BR

    1N23C

    Abstract: 1N23C diode 1N23 Diode Holder 1N23 diode CI 3060 Silicon Point Contact Mixer Diodes 1n23we 1N21E 1N23CR 1N1132
    Text: Silicon Point Contact Mixer Diodes Features · High Burnout Resistance · Low Noise Figure, even in the Starved L.O. Mode · Hermetically Sealed Description Alpha's point contact mixer diodes are designed , | 05flS443 00003fl7 4 | ~ Silicon Point Contact Mixer Diodes Typical X-Band Mixer Diode Figure 1 , Silicon Point Contact Mixer Diodes « 0 M « .»» C D O- ql| jo £ e s Si £ s E«l°~ co o ^ 2 « , the point contact diode's low turn-on as seen in Figure 1, it can operate efficiently as a mixer at


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    1N21* Diode Detector Holder

    Abstract: MA492C 1N23C diode MA41513 1N493C 1N23G Silicon Point Contact Mixer Diodes 1n415g jan-1n21we 1N23C
    Text: Detector Diodes Coaxial Point Contact Mixer Diodes Description This series of coaxial silicon point , Point Contact Mixer and Detector Diodes Features PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES COAXIAL POINT CONTACT MIXER DIODES AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Description This series of point contact mixer and detector , Contact Mixer and Detector Diodes Packaged Cartridge Point Contact Mixer Diodes Description These


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    JAN1N23WG

    Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
    Text: Description This series of coaxial silicon point contact mixer diodes is especially designed for low noise , Contact Mixer and Detector Diodes Features PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES COAXIAL POINT CONTACT MIXER DIODES AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES AXIAL LEAD GLASS PACKAGED POINT CONTACT DETECTOR DIODES Applications This series of point contact mixer and detector diodes , N Point Contact Mixer and Detector Diodes 11 SbMEEm DOGIBST 0 « M I C T-07-07 Packaged


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    radar detector 10.5 ghz local oscillator

    Abstract: Silicon Point Contact Mixer Diodes dmc5910
    Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Features Bonded Junctions for , : 80800 Mixer and Detector Diodes 80850 Handling Precautions for Schottky Barrier and Point Contact Mixer , flattened heads. 2-60 Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes Type Number , Uniform Characteristics Description Alpha's silicon Schottky barrier mixer diodes are de signed for , Contact Schottky Barrier Mixer Diodes line. The double balanced mixer shown in Figure 3c is recommended


    OCR Scan     		PDF 40GHz MF5078-024 DMF5078-025 DMF4039-024 DMF4039-025 DMF5078-018 DMF5078-019 DMF4039-018 DMF4039-019 DMF5078-012 radar detector 10.5 ghz local oscillator Silicon Point Contact Mixer Diodes dmc5910

    Not Available

    Abstract: No abstract text available
    Text: Detector Diodes 80850 Handling Precautions for Schottky Barrier and Point Contact Mixer and Detector , – ALP . Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes T-0 7 7-0 Type , Pressure Contact Schottky Barrier Mixer Diodes -v-o-7-0-1 Features ■■■■■Bonded , – 0 5 0 5 4 4 3 0 0 D 0 7 5 4 5 ■ALP Silicon Bonded and Pressure Contact Schottky Barrier Mixer , barrier mixer diodes are de­ signed for appications through 40 GHz and are made by deposition of a


    OCR Scan     		PDF 0S65H43 P-041 P-076

    1997 - gold metal detectors

    Abstract: IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes
    Text: diode is similar to point contact diodes and p-n junction diodes . The Schottky diode is more rugged than the point contact diode because the contact is not subject to change under vibration. The , SILICON MESH PASSIVATED DIODE Figure 1. Three Types of Schottky Barrier Diodes . 3-2 SiO2 , . Contact is made by pressing a sharp metal point against one of the metal contacts on the diode. The , surface for the thermocompression bond in plastic packaged diodes or for the pressure contact in glass


    Original     		PDF AN988, 26/IB gold metal detectors IN5711 in5711 equivalent diode ring mixer PN Junction Diode oscillator Metal Detector doppler radar p-n junction diode digital metal detector Silicon Point Contact Mixer Diodes

    radar detector 10.5 ghz local oscillator

    Abstract: DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes
    Text: Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ALPHA IND/ S E M I C O N D U C T , .8 mW/°C 2-58 Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes - ALPHA , Handling Precautions for Schottky Barrier and Point Contact Mixer and Detector Diodes 80000 Bonding Methods , Silicon Bonded and Pressure Contact Schottky Barrier Mixer Diodes ~ ALPHA IN»/ SEMICONDUCTOR , mixer diodes are de signed for applications through 40GHz and are made by deposition of a suitable metal


    OCR Scan     		PDF 40GHz in018 DMF4039-019 DMF5078-012 DMF5078-013 DMF4039-012 DMF4039-013 DMF5078-006 DMF5078-007 DMF4039-006 radar detector 10.5 ghz local oscillator DMC5501 DMF-6106 DMF4039 dmf6106 005801 DMF6130-013 Silicon Point Contact Mixer Diodes

    HSMS0001

    Abstract: Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode
    Text: is similar to point contact diodes and p-n junction diodes . The Schottky diode is more rugged than the point contact diode because the contact is not subject to change under vibration. The advantage , thermocompression bond in ceramic packaged diodes (outlines 44 or 49) or for the pressure contact in glass packaged , medium barrier mixer diodes such as the 5082-2702. How ever, this barrier height corresponds to a zero , important property of mixer diodes is the noise figure - a measure of how small a signal can be received


    OCR Scan     		PDF 26/Ig HSMS0001 Silicon Point Contact Mixer Diodes hsch 3486 zero bias schottky diode

    IN5711

    Abstract: Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes
    Text: semiconductor. The resulting non-linear diode is similar to point contact diodes and p-n junction diodes . The Schottky diode is more rugged than the point contact diode because the contact is not subject to change , bonding. Contact is made by pressing a sharp metal point against one of the metal contacts on the diode , or for the pressure contact in glass packaged diodes (outline 15). Passivated diodes include the , guaranteed performances of these diodes to 2 GHz. the treatment of the silicon surface layer. The term


    OCR Scan     		PDF AN988, 26/Th IN5711 Silicon Point Contact Mixer Diodes Microwave zero bias detector diodes

    1N23 diode

    Abstract: SINGLE ENDED MIXER 1N23 ALPHA 1N23 Diode Holder surface mount zero-bias detector diode silicon di for microwave diode mixer x-band motion detector metal diode Silicon Point Contact Mixer Diodes zero bias diode
    Text: ( silicon or gallium arsenide). The barrier of the point contact diode is formed by bringing the pointed end , . Much of this applies to point contact diodes as well. 2. BONDED CONTACT This construction features a , classifications are: 1. PRESSURE CONTACT (This is also used for point contact diodes .) The Schottky chip has a , ) where A = area of Schottky contact in cm2 p, = substrate resistivity in ohm-cm MIXER DIODES COMPARED TO , Application Note 80800: Mixer and Detector Diodes I. Introduction: Surface Barrier Diodes Most


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    2002 - 1N23 diode

    Abstract: 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100
    Text: Point Contact Diodes Point Contact Diodes : 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from , : serv@micrometrics.com Point Contact Diodes Point Contact Diodes : 1N Series Electrical Characteristics Noise , noise figure performance. These diodes employ epitaxial silicon optimized for low noise figure and , series of Point Contact Mixers is suitable for use in waveguide, coaxial and stripline applications


    Original     		PDF CS100 CS101 1N23 diode 1N23C 1N23B 1N21C 1N23A case cs101 1N415C diode 1N23WG 1N415H CS100

    CS100

    Abstract: cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C
    Text: Point Contact Diodes : 1N Series S - X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through XBand , Performance 10.0 FORWARD CURRENT (mA) 1.0 .1 Point Contact Diodes .01 56 .001 0 , , E-mail: serv@micrometrics.com Point Contact Diodes : 1N Series Electrical Characteristics VSWR , Point Contact Diodes Noise Figure 3.060 GHz LO = 1.0 mW RI = 100 Ohms MAX (dB) Notes: For


    Original     		PDF CS100 CS101 CS100 cs-100 1N415C 1N23 diode 1N23B 1N23 1N21E 1N416C cs-101 1N21C

    in23c

    Abstract: IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416
    Text:  SILICON POINT CONTACT MIXER OlOOES ASI Point Contact Mixer Diodes are designed for applications , 500 1.5 6.0 6750 1.0 1N150 00-22 1.0 200 500 6.5 6750 1.0 1N160 DO-22 J POINT CONTACT MIXER DIODES , €” 9375 1.0 1N415H 00-23 -SSS- ta- -523- 3331 -E35— sac POINT CONTACT MIXER DIODES TYPE , use in Coaxial, Waveguide and Stripline applications. These mixer diodes are categorized by noise , matching criteria for these mixer diodes is: 1. Conversion Loss—ALc = 0.3dB maximum 2. IF


    OCR Scan     		PDF DO-22, DO-23 DO-37 26GHz. 1N26B DO-37 1N26C 30MHz, 1000Hz in23c IN415C IN23CR in23we 1N23F 1N3747 IN26 1N21C HP-432A 1n416

    1n415c

    Abstract: 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C
    Text:  Point Contact Diodes : 1N Series S - X Band Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications from S-Band through X-Band , performance. These diodes employ epitaxial silicon optimized for low noise figure and wide bandwidth and are used in single or multiple device mixer applications. Applications This IN series of Point Contact , : serv@micrometrics.com m TD5L014 0000051 ST1 m Point Contact Diodes : 1N Series Electrical Characteristics Noise


    OCR Scan     		PDF CS100 1N23F 1N23G 1N23WG 1N23H CS101 1N415C 1n415c 1N23G 1N21C 1N21D 1N21E 1N21F 1N21G 1N21WE 1N416G 1N416C

    backward diode

    Abstract: tunnel diode General Electric "backward diode"
    Text: in mixer applications requiring a better noise figure than can be achieved with silicon diodes and , operating point . Thus, similar considerations apply to detector and mixer diodes , i.e. for high efficiency , P j p i GE C P L E S S E Y CT3508-1.2 MIXER & DETECTOR DIODES - INTRODUCTION M ETAL S E M IC O , with a single diode or more commonly, with multiple diodes in balanced or double balanced mixer , the local oscillator frequency. Semiconductor mixer and detector diodes for microwave applications


    OCR Scan     		PDF CT3508-1 backward diode tunnel diode General Electric "backward diode"

    Silicon Point Contact Mixer Diodes

    Abstract: No abstract text available
    Text: Notes: 80800 Mixer and Detector Diodes 80850 Handling Precautions for Schottky Barrier and Point Contact , lower than silicon Schottky diodes at frequencies above 12 GHz. Matched pairs of mixer diodes are used , GaAs Schottky Barrier Mixer Diodes Features Low Noise Figure Excellent Cutoff Ideal for Image , bond them directly into a customer circuit. These diodes are categorized by noise figure for mixer , for balanced modulators and discriminators. The matching criteria for packaged mixer diodes are as


    OCR Scan     		PDF DMK6571-000 DMK3318-000 DMK6583-000 DMK3379-000 DMK3167-000 DMK3353-000 DMK3354-000 DMK3386-000 DMK4712-000 DMK3308-000 Silicon Point Contact Mixer Diodes

    378016

    Abstract: Ka Band Mixer dmk6600 "frequency mixer" ku DMK6583 Silicon Point Contact Mixer Diodes DMK2784-000
    Text: Notes: 80800 Mixer and Detector Diodes 80850 Handling Precautions for Schottky Barrier and Point Contact Mixer and Detector Diodes 80000 Bonding Methods: Diode Chips, Beam-Lead Diodes and Capacitors 2-13 , lower than silicon Schottky diodes at frequencies above 12 GHz. Matched pairs of mixer diodes are used , bond them directly into a customer circuit. These diodes are categorized by noise figure for mixer , for balanced modulators and discriminators. The matching criteria for packaged mixer diodes are as


    OCR Scan     		PDF DMK6571-000 DMK3318-000 DMK6583-000 DMK3379-000 DMK3167-000 DMK3353-000 DMK3354-000 DMK3386-000 DMK4712-000 DMK3308-000 378016 Ka Band Mixer dmk6600 "frequency mixer" ku DMK6583 Silicon Point Contact Mixer Diodes DMK2784-000

    2000 - diode detector x band

    Abstract: s band doppler mixer noise source diode Diode Schottky Switch frequency 10 GHz 5082-2565 microwave detector diode detector diode DOPPLER circuit ED-15 noise diode
    Text: than those of either pn junctions or point contact diodes . Schottky Diode Types There are four types , . Silicon dioxide passivated diodes with n-doped epitaxial layers have the highest corner frequencies among Schottky diodes . This type 30 NOISE TEMPERATURE RATIO (dB) PASSIVATED MIXER (n-TYPE , . References 1. A.M. Cowley and R.A. Zettler, "Shot Noise in Silicon Schottky Barrier Diodes ", IEEE , Flicker Noise in Schottky Diodes Application Note 956-3 At lower frequencies, diode noise


    Original     		PDF ED-15, ED-16, 5980-3000EN diode detector x band s band doppler mixer noise source diode Diode Schottky Switch frequency 10 GHz 5082-2565 microwave detector diode detector diode DOPPLER circuit ED-15 noise diode

    2003 - variable power divider

    Abstract: circuit and working lcr meter 282P diode ring mixer phase detector HSMS-282K small signal low leakage fast epitaxial diode 282R SOT143 C9 sot-23 DIODE marking code D3 NN SOT-143
    Text: p-type silicon . Such diodes suffer from higher values of RS than do the n-type. Thus, p-type diodes , ) and n-type diodes such as the HSMS-282x are used for mixer applications (where high L.O. drive , drive is increased, up to the point where the Schottky diodes are driven into saturation. Above this , the single-balanced mixer . Figure 24 shows such a mixer , with two diodes in each spot normally , Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features · Low


    Original     		PDF HSMS-282x OT-363 HSMS-282K 5968-8014E 5989-0279EN variable power divider circuit and working lcr meter 282P diode ring mixer phase detector small signal low leakage fast epitaxial diode 282R SOT143 C9 sot-23 DIODE marking code D3 NN SOT-143

    2000 - 282P

    Abstract: variable power divider HSMS-282K HSMS-282x Series 2-82K NN SOT-143 hsms2822 schottky diode limiter application note sot-23 DIODE marking code D3 marking code c2 diode
    Text: p-type silicon . Such diodes suffer from higher values of RS than do the n-type. Thus, p-type diodes , ) and n-type diodes such as the HSMS-282x are used for mixer applications (where high L.O. drive , drive is increased, up to the point where the Schottky diodes are driven into saturation. Above this , the single-balanced mixer . Figure 24 shows such a mixer , with two diodes in each spot normally , Surface Mount RF Schottky Barrier Diodes Technical Data HSMS-282x Series Features · Low


    Original     		PDF HSMS-282x OT-363 HSMS-282K OT-23/SOT-143 5968-2356E, 5968-5934E 5968-8014E 282P variable power divider HSMS-282x Series 2-82K NN SOT-143 hsms2822 schottky diode limiter application note sot-23 DIODE marking code D3 marking code c2 diode

    1N23C diode

    Abstract: DIODE ku 1490 1N25 diode 1N26A diode DO-37 DO-23 1N415C 1N4294 1N4603R 1N26BR
    Text: SILICON POINT CON TACT MIXER DIODES ASI Point Contact M ixer Diodes are designed for , the point contact mixer diodes meet or exceed the m ilitary environm ental specifications of M IL-S , POINT CONTACT MIXER DIODES X BAND (CONTINUED) _ TYPE NUMBER POLARITY FREQUENCY BAND , . , POINT CONTACT MIXER DIODES _ L,S,C-BAND _ _ TYPE NUMBER POLARITY FREQUENCY BAND , Coaxial, W aveguide and S tripline applications. These diodes are available as m atched pairs and are


    OCR Scan     		PDF DO-22, DO-23 DO-37 ardN21H 1N21HR 1N150 1N160 1N150R 1N160R 1N23C 1N23C diode DIODE ku 1490 1N25 diode 1N26A diode 1N415C 1N4294 1N4603R 1N26BR

    pulse metal detector

    Abstract: x band diode detector waveguide diode detector x band Silicon Point Contact Mixer Diodes Schottky Barrier Diodes for detectors Silicon Detector Diodes Silicon Detector Silicon Point Contact Diode
    Text: the laboratory. See Sections 2 and 7 for Application Notes: 80800 Mixer and Detector Diodes 80850 Handling Precautions for Schottky Barrier and Point Contact Mixer and Detector Diodes 80000 Bonding Methods , Silicon Schottky Barrier Detector Diodes Features Low 1/f Noise Bonded Junctions for , the voltage outputs at a point in the square law region. 2-62 Silicon Schottky Barrier Detector , Detector Diode Admittance Characteristics 2-63 Silicon Schottky Barrier Detector Diodes Test


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