MRF374 Search Results

Z14b

Abstract: Z10A Z12B Z10B z11b r1a transistor C14A RO3010 C12A C12B
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.

RO30

Abstract: mrf374
Contextual Info: Freescale Semiconductor Technical Data MRF374A Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

C14A

Abstract: MRF374A C12A C12B C13B MRF374 RO3010 j310 vishay J352 100WPEP
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

Contextual Info: ARCH I V ED BY FREESCALE SEM I CON DU CT OR, I N C. 2 0 0 5 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

marking c14a

Abstract: ATC - Semiconductor Devices transistor j239 04 6274 045 000 800
Contextual Info: MRF374A Rev. 4, 12/2004 Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

z14b

Abstract: RO3010 C14A C12A C12B C13B MRF374 r1a transistor VJ2225Y Z14A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: C14A z14b
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

J352

Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: Z14B C14A thermistor r5t MRF374 470 860 mhz PCB transistor R1A C14B r1a transistor transistor z2b
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

transistor L1A

Abstract: 1206 capacitor chip pads layout rogers capacitor bc17a 470 860 mhz PCB
Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

transistor j352

Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this

Vj3640Y

Abstract: transistor L1A
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA MRF374 N–Channel Enhancement–Mode Lateral MOSFET LIFETIME BUY Designed for broadband commercial and industrial applications at frequencies from 470 – 860 MHz. The high gain and broadband performance of this device

RO3010

Abstract: motorola balun variable capacitor rogers capacitor 1606 mosfet C14A MRF374 MRF374A C12A C12B
Contextual Info: MOTOROLA Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

J239 mosfet transistor

Abstract: L1AB
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRF374A Rev. 5, 5/2006 RF Power Field-Effect Transistor MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of

MRF374A

Abstract: marking c14a l1a marking
Contextual Info: Freescale Semiconductor Technical Data Rev. 4, 12/2004 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: RF POWER VERTICAL MOSFET
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

Z14b

Abstract: Z10A RO3010 Z11A VJ2225Y C14A thermistor C11 Z11B C12A C12B
Contextual Info: MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA Product Is Not Recommended for New Design. The next generation of higher performance products are in development. Visit our online Selector Guides http://mot–sps.com/rf/sg/sg.html for scheduled introduction dates.

MRF374

Abstract: transistor D 863
Contextual Info: MRF374 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MRF374 is Designed for broadband commercial and industrial applications in 470 to 860 MHz band. PACKAGE STYLE .230 BAL FLG. FEATURES: • PG = 13.5 dB typ. at 100 W/875 MHz • ηD = 36 % Typical

Contextual Info: Document Number: MRF374A Rev. 5, 5/2006 Freescale Semiconductor Technical Data LAST ORDER 3 OCT 08 LAST SHIP 14 MAY 09 RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

RF MOSFET

Abstract: MRF374
Contextual Info: Una. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 - 860 MHz. The high gain and broadband performance of this

marking c14a

Abstract: C14A C13B MRF374 MRF374A RO3010 C12A C12B Vishay Dale 10 ohm resistorS J352
Contextual Info: Freescale Semiconductor Technical Data RF Power Field - Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF374A LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

balun 50 kW

Abstract: C14A C12A C12B C13B MRF374 MRF374A RO3010 Vishay Dale 800 ohm resistors
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF374A/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this

NI-650

Abstract: MRF374
Contextual Info: ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. 2005 MOTOROLA Order this document by MRF374/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374 N–Channel Enhancement–Mode Lateral MOSFET ARCHIVED 2005 Designed for broadband commercial and industrial applications with frequencies from 470 – 860 MHz. The high gain and broadband performance of this

RO3010

Abstract: j352 transistor j352 bc17a VJ2225Y
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF374A N–Channel Enhancement–Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this