BUZ80A Search Results

BUZ80A

Abstract: BUZ80a equivalent DD 127 D TRANSISTOR
Contextual Info: BUZ80A  N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V <3Ω 3.8 A TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

Contextual Info: MOTOROLA SC XSTRS/R F m E D I OQöTbMS b3b?aSM 3 I MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA BUZ80A P o w e r Field E ffe c t T ra n sisto r N-Channel Enhancem ent-Mode Silicon Gate This T M O S Power FET is designed for high voltage, high speed, low loss power switching applications, such

BUZ80AFI

Abstract: BUZ80AF BUZ80A k2800 Y125 dg45b
Contextual Info: 7 ^ 2 ^ 5 3 7 O O M SbBT G 7b • S 6TH BUZ80A BUZ80AFI SGS-THOMSON :^OT q MS N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE BUZ80A BUZ80AFI ■ . . ■ . ■ . V dss R dS(OII) Id 800 V 800 V < 3 Q < 3 Ü 3.8 A 2.4 A TYPICAL Ros(on) = 2.5 Q AVALANCHE RUGGED TECHNOLOGY

BUZ80A

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ80A CASE OUTLINE: TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

UZ80A

Contextual Info: SGS-THOMSON £j ï ULKgraMOeS BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYP E BUZ80A BUZ80AFI • . . . . . . V dss RDS on Id 800 V 800 V <3 0 < 3 0. 3.8 A 2.4 A TYPICAL RDS(on) = 2.5 £2 AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED

SSH6N80

Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L

Contextual Info: BUZ80A N - CHANNEL 800V - 2.5CI - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • . . . . . . V dss RdS oii Id 800 V < 3 Q. 3.8 A TYPICAL RDS(on) = 2.5 £1 ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

BUZ80AFI

Abstract: BUZ80A BUZ80AF
Contextual Info: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID BUZ80A BUZ80AFI 800 V 800 V < 3Ω < 3Ω 3.8 A 2.4 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

BUZ80A

Contextual Info: SIEMENS BUZ80A SIPMOS Power Transistor • N channel • Enhancement mode Type BUZ 80A Vds 800 V b 3A ^DSion Package Ordering Code 3Q TO-220 AB C67078-A1309-A3 Maximum Ratings Parameter Symbol Drain source voltage Vds v DGR Drain-gate voltage Rgs = 20 ki2

BUZ80AF

Abstract: BUZ80A BUZ80AFI
Contextual Info: BUZ80A BUZ80AFI SGS-THOMSON Z T ê N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V d ss FtDS on Id BUZ80A 800 V 3 Ü 3.8 A BUZ80AFI 800 V 3 Li 2.4 A . . . . . . AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C

BUZ80A

Contextual Info: BUZ80A BUZ80AFI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on ID BUZ80A BUZ80AFI 800 V 800 V < 3Ω < 3Ω 3.8 A 2.4 A • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 2.5 Ω AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

BUZ80A

Contextual Info: BUZ80A  N - CHANNEL 800V - 2.5Ω - 3.8A - TO-220 FAST POWER MOS TRANSISTOR TYPE BUZ80A • ■ ■ ■ ■ ■ ■ V DSS R DS on ID 800 V <3Ω 3.8 A TYPICAL RDS(on) = 2.5 Ω ± 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC

mosfet cross reference

Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
Contextual Info: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

BUZ171

Abstract: TO-236-AA buz90 BUZ80A BUZ84A BUZ10 BUZ11 buzh F133 251C
Contextual Info: - 272 - f m % *± m * Vd s or £ t V £ Vg s Vd g V (V) %i fê (Ta=25,C ) ÎD Pd * /CH * /CH (A) (W) (nA) Vg s th) Id s s ÎGSS Vg s (V) (UA) Vd s (V) min max (V) (V) % 14 (Ta=25,C ) b(on) Ciss gfs Vg s (V) (Q> Id (A) Vg s (V) *typ (A) *typ (S) 3.0 1.0 6.0

triac zd 607

Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
Contextual Info: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

MFE9200

Abstract: BUZ84A BUZ90 equivalent IRF150 MOSFET AMP circuit BUZ35S MTP40N06M IRFZ22 mosfet 1RF620 MTM12N10L MTP25N10E
Contextual Info: MOTOROLA SC XSTRS/R IM E F D | b3b?254 O O fl'ìB n 1 | Selection by Package by contacting a Motorola sale office In your area or by con­ tacting a Motorola Literature Distribution Center listed on the back cover. Order the disk by requesting DK101/D. The product listed in Tables t through 22 have been com­

BUZ901P

Abstract: BUZ900P BUZ900 buz90a d44c3 buz94 BUZ77 BUZ345 DTS107 DTS410
Contextual Info: STI Type: BUZ341 Notes: Breakdown Voltage: 200 Continuous Current: 33 RDS on Ohm: 0.07 Trans Conductance Mhos: 15 Trans Conductance A: 21 Gate Threshold min: 2.1 Gate Threshold max: 4.0 Resistance Switching ton: 60 Resistance Switching toff: 680 Resistance Switching ID: 3.0

V103 TRANSISTOR

Abstract: BUZ80A T0220AB V103 buz80
Contextual Info: PowerM OS transistor_ BU Z80A _ N AMER PHI LI PS /D I SC RE T E DtE D • ^53131 GOmSMT ~ T ■ T - - S 9 - I I May 1987 G EN ER A L DESCRIPTION N-channel enchancem ent m ode field-effect pow er transistor in a plastic envelope. T he device is intended for use in

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

k 3561 MOSFET

Abstract: TP5N05 BUZ80a equivalent p20n50 P12N08 nx 9120 TP3N40 FD1Z0 IRFZ22 mosfet th15n20
Contextual Info: 1 Selection by Package The product listed in Tables 1 through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained by contacting a Motorola sale office in your area or by con­

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

NTP3055AV

Abstract: NTP3055 irf630 irf640 MTP5P25 IRF540 MTB1306 MTB3N100ET4 MTB3N60ET4 0708B MTP6N60E equivalent
Contextual Info: PRODUCT / PROCESS CHANGE NOTIFICATION UPDATE Generic Copy 08-DEC-2000 SUBJECT: Update Notification #10395 TITLE: Modification To PCN #10344 EFFECTIVE DATE: 17-Mar-2001 AFFECTED CHANGE CATEGORY S : Subcontractor Assembly Site Subcontractor Test Site Assembly Process