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STMicroelectronics STRH40P10HYG MOSFETs Rad-Hard P-Channel 100 V - 40A MOSFET - ESCC Flight
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Mouser Electronics	STRH40P10HYG					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	STRH40P10HYG		8,673			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STRH40P10HY1 Power Field-Effect Transistor, 34A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	STRH40P10HY1		5,534			1 - 10 - 100 - 1000 - 10000 -	Get Quote
STMicroelectronics STRH40P10HYT Power Field-Effect Transistor, 34A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	STRH40P10HYT		5,124			1 - 10 - 100 - 1000 - 10000 -	Get Quote

STRH40P10 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened	Original	STRH40P10 O-254AA SC06140p	PDF
to-254aa Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 48 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened	Original	STRH40P10 O-254AA STRH40P10FSY1 STRH40P10FSY01 to-254aa	PDF
RH40P Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Exceptional dv/dt capability ■ 100% avalanche tested ■ Application oriented characterization	Original	STRH40P10FSY3 O-254AA O-254AA STRH40P10 RH40P	PDF
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened	Original	STRH40P10 O-254AA SC06140p DocID18354	PDF
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened	Original	STRH40P10 O-254AA SC06140p DocID18354	PDF
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened	Original	STRH40P10 O-254AA SC06140p DocID18354	PDF
strh40p10 Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet — production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2	Original	STRH40P10 O-254AA SC06140p strh40p10 STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H	PDF
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10Hy	PDF
Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge 3 2 1 TO-254AA ■	Original	STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA	PDF
Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA	Original	STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm O-254AA	PDF
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened	Original	STRH40P10 O-254AA SC06140p STRH40P10HY1any DocID18354	PDF
Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10HYG	PDF
Contextual Info: STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET PRELIMINARY DATA General features Type VDSS STRH40P10FSY3 100V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned ■ Low total gate charge	Original	STRH40P10FSY3 O-254AA 100kRad 34Mev/cm O-254AA	PDF
strh40p10 Abstract: STRH40P10HYG Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite	Original	STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P strh40p10 STRH40P10HYG	PDF

STRH40P10FSY3 Abstract: JESD97 STRH40P10FSY1 Contextual Info: STRH40P10FSY1 STRH40P10FSY3 P-channel 100V - 0.060Ω - TO-254AA Rad-hard low gate charge STripFET Power MOSFET Features Type VDSS STRH40P10FSY1 100 V STRH40P10FSY3 100 V • Low RDS on ■ Fast switching ■ Single event effect (SEE) hardned 3 2 1 TO-254AA	Original	STRH40P10FSY1 STRH40P10FSY3 O-254AA 34Mev/cm STRH40P10FSY3 JESD97 STRH40P10FSY1	PDF
Contextual Info: STRH40P10 P-channel 100 V, 0.060 Ω, TO-254AA rad-hard low gate charge STripFET Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened	Original	STRH40P10 O-254AA O-254AA SC06140p	PDF