STRH40P10H Search Results
STRH40P10H Price and Stock
STMicroelectronics STRH40P10HYGMOSFETs Rad-Hard P-Channel 100 V - 40A MOSFET - ESCC Flight |
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STRH40P10HYG |
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STRH40P10HYG | 8,673 |
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STMicroelectronics STRH40P10HY1Power Field-Effect Transistor, 34A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
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STRH40P10HY1 | 5,534 |
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STMicroelectronics STRH40P10HYTPower Field-Effect Transistor, 34A I(D), 100V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA |
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STRH40P10HYT | 5,124 |
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STRH40P10H Datasheets Context Search
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Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened |
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STRH40P10 O-254AA SC06140p DocID18354 | |
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Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened |
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STRH40P10 O-254AA SC06140p DocID18354 | |
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Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened |
Original |
STRH40P10 O-254AA SC06140p DocID18354 | |
strh40p10
Abstract: STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H
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STRH40P10 O-254AA SC06140p strh40p10 STRH40P10HYG MIL-STD-750E STRH40P10HY1 STRH40P10H | |
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Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite |
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STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10Hy | |
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Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Datasheet - production data Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching • 100% avalanche tested 3 1 • Hermetic package 2 • 100 krad TID TO-254AA • SEE radiation hardened |
Original |
STRH40P10 O-254AA SC06140p STRH40P10HY1any DocID18354 | |
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Contextual Info: STRH40P10 Rad-Hard P-channel 100 V, 34 A Power MOSFET Features VBDSS ID RDS on Qg 100 V 34 A 0.060 Ohm 162 nC • Fast switching ■ 100% avalanche tested ■ Hermetic package ■ 100 krad TID ■ SEE radiation hardened 3 1 2 TO-254AA Applications ■ Satellite |
Original |
STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P10HYG | |
strh40p10
Abstract: STRH40P10HYG
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STRH40P10 O-254AA SC06140p STRH40P10HY1 STRH40P strh40p10 STRH40P10HYG |