24N50 Search Results

24N50 Datasheets (3)

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HUBER+SUHNER

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size
24_N-50-2-14/133_NE	HUBER+SUHNER	24_N-50-2-14/133_NE	Original	PDF	806.43KB
24_N-50-3-14/133_NE	HUBER+SUHNER	24_N-50-3-14/133_NE	Original	PDF	809.35KB
24_N-50-3-51/19-_NE	HUBER+SUHNER	24_N-50-3-51/19-_NE	Original	PDF	803.52KB

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HUBER+SUHNER 24_N-50-3-14/133_NE Conn Type N 0Hz to 18GHz 50Ohm Solder ST Panel Mount RCP Gold Over Nickel Single
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	24_N-50-3-14/133_NE		100		2	1 - 10 $42.53 100 $42.53 1000 $42.53 10000 $42.53	Buy Now
Master Electronics	24_N-50-3-14/133_NE		104			1 $30.38 10 $25.92 100 $20.27 1000 $20.22 10000 $20.22	Buy Now
onsemi FDA24N50F Power MOSFET, N-Channel, UniFETTM, FRFET?, 500 V, 24 A, 200 mO, TO-3P - Rail/Tube (Alt: FDA24N50F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FDA24N50F	Tube	1,400		30	1 - 10 - 100 $2.18 1000 $2.13 10000 $2.13	Buy Now
Newark ()	FDA24N50F	Bulk			90	1 - 10 - 100 $3.77 1000 $3.14 10000 $3.01	Buy Now
	FDA24N50F	Cut Tape			1	1 $3.22 10 $3.22 100 $3.22 1000 $3.22 10000 $3.22	Buy Now
TME	FDA24N50F		88		1	1 $4.11 10 $3.50 100 $3.50 1000 $3.50 10000 $3.50	Buy Now
Avnet Asia	FDA24N50F			56 Weeks	450	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Silica	FDA24N50F			18 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Get Quote

EBV Elektronik	FDA24N50F		330	19 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	FDA24N50F		16,200		1	1 $5.56 10 $5.56 100 $3.55 1000 $2.69 10000 $2.69	Buy Now
Nisshinbo Micro Devices R1224N502H-TR-FE 18.5V INPUT PWM/VFM BUCK DC/DC CONTROLLER - Tape and Reel (Alt: R1224N502H-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	R1224N502H-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.71	Buy Now
onsemi FQA24N50F - Rail/Tube (Alt: FQA24N50F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	FQA24N50F	Tube		35 Weeks	450	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Nisshinbo Micro Devices R1224N502G-TR-FE 18.5V INPUT PWM/VFM BUCK DC/DC CONTROLLER - Tape and Reel (Alt: R1224N502G-TR-FE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	R1224N502G-TR-FE	Tape & Reel		12 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.71	Buy Now

Find more 24N50 price and stock on Findchips.com

24N50 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ixf26n50q Abstract: 24N50 26N50Q 125OC ixf26N50 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	24n50q 26n50q 125oc 728b1 +3ixf26n50q 24n50 ixf26n50	PDF
24N50 Abstract: 26N50 .24n50 IXFH26N50 IXFR24N50 IXFR26N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	26n50 isoplus247tm 24n50 247tm +3ixfr26n50 ixfr24n50 ixfh26n50	PDF
26N50 Abstract: IXFC 26N50 IXFH26N50 24N50 ixfc26n50 .26n50 .24n50 IXFC24N50 Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM	Original	isoplus220tm 26n50 24n50 220lvtm +6ixfc26n50 ixfc24n50 ixfh26n50 728b1 123b1 ixfc 26n50	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state	Original	24n50 qw-r502-533	PDF
24N50 Abstract: mosfet 24n50 24N50L-T47-T Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 24N50 Power MOSFET 24A, 500V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 24N50 is an N-channel mode power MOSFET using UTC’s advanced technology to provide customers with planar stripe and DMOS technology. This technology allows a minimum on-state	Original	24n50 qw-r502-533 mosfet 24n50 24n50l-t47-t	PDF
24N60 Abstract: IXGH24N50B IXGH24N60B Contextual Info: HiPerFASTTM IGBT 24N50B IXGH24N60B VCES IC 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings 24N50 24N60 TO-247 AD VCES TJ = 25°C to 150°C 500 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	ixgh24n50b ixgh24n60b 24n50 24n60 +1o-247	PDF
c2548 Abstract: IXGH24N50BU1 IXGH24N60BU1 Contextual Info: HiPerFASTTM IGBT with Diode 24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	ixgh24n50bu1 ixgh24n60bu1 24n50 24n60 +3o-247 tempera10 c2548	PDF
ixfh26n50q Abstract: 26N50 IXFC 26N50 Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 RDS on 0.20 Ω 0.23 Ω 500 V 23 A 500 V 21 A trr ≤ 250 ns N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	isoplus220tm 26n50q 24n50q 220tm +426n50 24n50 ixfh26n50q ixfc 26n50	PDF
24n50 Abstract: IXFH26N50Q A24N50 .24n50 26N50 ISOPLUS247 IXFR24N50Q IXFR26N50Q SST250 Contextual Info: □IXYS Advanced Technical Information V DSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ 26N50Q IXFR 24N50Q Electrically Isolated Back Surface D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns DS(on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Lowtrr, HDMOS™ Family	OCR Scan	isoplus247 26n50q 24n50q 26n50 +624n50 ixfr26n50q ixfh26n50q a24n50 ixfr24n50q sst250	PDF
26N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR 26N50 ISOPLUS247TM VDSS ID25 500 V 24 A 500 V 22 A trr £ 250 ns IXFR 24N50 Electrically Isolated Back Surface RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	26n50 isoplus247tm 24n50 ixfr26n50	PDF
W2515 Abstract: IXGH24N50BU1 IXGH24N60BU1 Contextual Info: HiPerFASTTM IGBT with Diode 24N50BU1 IXGH24N60BU1 Combi Pack VCES I C 25 VCE(sat) tfi 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Preliminary data Symbol Test Conditions Maximum Ratings TO-247 AD 24N50 24N60 VCES TJ = 25°C to 150°C 500 VCGR TJ = 25°C to 150°C; RGE = 1 MW	Original	ixgh24n50bu1 ixgh24n60bu1 24n50 24n60 +3o-247 tempera000 w2515	PDF
ixf26N50 Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFT 24N50Q IXFH/IXFT 26N50Q Q-Class 500 V 24 A 500 V 26 A trr ≤ 250 ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	24n50q 26n50q o-240 125oc +2728b1 ixf26n50	PDF
26n50 Abstract: .24n50 24n50 ixfc26n50 IXFC24N50 IXFH26N50 W26-1 Ixfc 26n50 Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Symbol	Original	isoplus220tm 26n50 24n50 220tm +5ixfc26n50 ixfc24n50 ixfh26n50 w26-1 ixfc 26n50	PDF
24N50 Abstract: IXGH24N50BU1 IXGH24N60BU1 Contextual Info: DIXYS HiPerFAST IGBT with Diode Symbol V,CES IXGH 24N50BU1 IXGH 24N60BU1 24N50 600 V V Continuous ±20 V VGEM T ransient ±30 V C25 Tc = 25°C 48 A ^C90 T c = 90°C 24 A ®CM T c = 25°C, 1 ms 96 A SSOA RBSOA VGE = 15 V, TVJ = 125°C, Rg = 22 Q Clamped inductive load, L = 100,uH	OCR Scan	24n50bu1 24n60bu1 24n50 24n60 +3-247a ixgh24n50bu1 ixgh24n60bu1	PDF

24N50 Abstract: 26N50 IXFC24N50 IXFC26N50 IXFH26N50 Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM Electrically Isolated Back Surface IXFC 26N50 IXFC 24N50 ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM	Original	isoplus220tm 26n50 24n50 220lvtm +5ixfc26n50 ixfc24n50 ixfh26n50 728b1 123b1	PDF
26N50 Contextual Info: Advanced Technical Information HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50 IXFR 24N50 Electrically Isolated Back Surface ID25 500 V 24 A 500 V 22 A trr £ 250 ns RDS(on) 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	isoplus247tm 26n50 24n50 ixfr26n50	PDF
26N50 Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50Q IXFC 24N50Q Electrically Isolated Back Surface ID25 500 V 23 A 500 V 21 A trr ≤ 250 ns RDS on 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family	Original	isoplus220tm 26n50q 24n50q 26n50 +224n50 ixfc26n50q	PDF
26N50Q Abstract: IXFH26N50Q 24N50Q Contextual Info: HiPerFETTM Power MOSFETs IXFR ISOPLUS247TM VDSS 26N50Q IXFR 24N50Q Electrically Isolated Back Surface ID25 RDS(on) 500 V 24 A 500 V 22 A trr £ 250 ns 0.20 W 0.23 W N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol	Original	isoplus247tm 26n50q 24n50q ixfr26n50q +1ixfh26n50q	PDF
Contextual Info: MegaMOSTMFET VDSS IXTH / IXTM 21N50 IXTH / IXTM 24N50 500 V 500 V ID25 RDS on 21 A 0.25 Ω 24 A 0.23 Ω N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous	Original	21n50 24n50 o-247 o-204	PDF
Contextual Info: ADVANCE TECHNICAL INFORMATION VDSS HiPerFETTM MOSFETs ISOPLUS220TM IXFC 26N50 IXFC 24N50 Electrically Isolated Back Surface ID25 RDS on 500 V 23 A 500 V 21 A trr ≤ 250 ns 0.20 Ω 0.23 Ω N-Channel Enhancement Mode High dV/dt, Low trr, HDMOSTM Family ISOPLUS 220LVTM	Original	isoplus220tm 26n50 24n50 220lvtm +5ixfc26n50 ixfc24n50 ixfh26n50 728b1 123b1	PDF
GEM X 365 Abstract: IXGH24N60B 24N60 IXGH24N50B zr smd Contextual Info: Prelim inary data HiPerFAST IGBT 24N50B IXGH24N60B V CES ^C 25 VCE(sat) 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns TO-247 SMD (24N*BS) Znr Symbol Test Conditions Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C 500 600 V Vcon Tj = 25°C to 150°C; RGE = 1 MQ	OCR Scan	ixgh24n50b ixgh24n60b o-247 24n50 +324n60 gem x 365 zr smd	PDF
Contextual Info: Advanced Technical Information IXTH 24N50Q IXTT 24N50Q Power MOSFETs Q-Class VDSS = 500 V = 24 A ID25 RDS on = 0.24 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR	Original	24n50q o-247 728b1 123b1 +1065b1	PDF
Contextual Info: □IXYS Advanced Technical Information VDSS HiPerFET Power MOSFETs IXFR ISOPLUS247™ D ^D25 24 A 500 V 22 A 500 V t rr < 250 ns 26N50 IXFR 24N50 Electrically Isolated Back Surface D S (on) 0.20 Q 0.23 Q N-Channel Enhancement Mode HighdV/dt, Low trr, HDM O S™ Family	OCR Scan	isoplus247 26n50 24n50 ixfr26n50	PDF
.24n50 Abstract: xgh2 IXGH24N50BU1 IXGH24N60BU1 Contextual Info: Preliminary data HiPerFAST IGBT with Diode 24N50BU1 IXGH24N60BU1 V CES C 25 VCE(sat) t. 500 V 600 V 48 A 48 A 2.3 V 2.5 V 80 ns 80 ns Combi Pack T0-247 SMD (24NBU1 S) Symbol TestConditions I C (TAB) Maximum Ratings 24N50 24N60 v CES Tj = 25°C to 150°C	OCR Scan	ixgh24n50bu1 ixgh24n60bu1 t0-247 24n50 +224n60 xgh2	PDF

24N50 Search Results

24N50 Datasheets (3)

24N50 Price and Stock

HUBER+SUHNER 24_N-50-3-14/133_NE

onsemi FDA24N50F

Nisshinbo Micro Devices R1224N502H-TR-FE

onsemi FQA24N50F

Nisshinbo Micro Devices R1224N502G-TR-FE

24N50 Datasheets Context Search

ixf26n50q

24N50

26N50

24N50

24N60

c2548

ixfh26n50q

24n50

26N50

W2515

ixf26N50

26n50

24N50

24N50

26N50

26N50

26N50Q

GEM X 365

.24n50