42N15
Abstract: 079A 42N20
Contextual Info: I X Y S CORP 10E D I D00D3b4 3 I /_ V -3 Ÿ -/S - □IXYS MegaMOS FETs IXTH42N20, 15 IXTM42N20, 15 MAXIMUM RATINGS Parameter Sym. Drain-Source Voltage 1 Vd Drain-Gate Voltage (Rq s = 1.0MÎ1) (1) Vqqr Gate-Source Voltage Continuous
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d00d3b4ixth42n20ixtm42n20ixth42n15+7ixtm42n15o-204o-24750-200v42n15079a42n20
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640
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IXTH40N25
Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
Contextual Info: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025
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ixtd67n10-7xixtd75n10-7xixtd42n20-7xixtd50n20-7x+12ixtd40n25-6xixtd40n30-7xirfc450-5xirfc460-6xixtd21n50-7xixtd24n50-7xixth40n25irfp450 equivalentixth7p50ixth12n90ixtd11n80irfp460 equivalent
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1XTH5N100
Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
Contextual Info: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out line No mm mils IXTD67N10 IXTD75N10
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ixtd67n10ixtd75n10irfc250ixtd42n20+11ixtd50n20ixtd68n20irfc254ixtd40n25ixtd35m30ixtd40n301xth5n100xth6n90irfp460 equivalentixth7p50ixth10p50
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16rfp15n05rfp50n05lrfd14n05lrfd14n05lsmrfd14n05smrfp14n05lirf540 complementaryirfz44n complementarystd2n52toshiba irfz44a datasheetstp2na60ssh6n80rfp60n06ste38na50irf630 complementaryirf3205 ir
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megamos
Abstract: f g megamos megamos 48 ID 48 Megamos megamos 13 IXTH40N25 IXTH12N95 IXTH12N100 IXTH26N50 IXTH11N95
Contextual Info: I X Y S CORP The MegaMOS family of large scale monolithic Power MOSFETs provides significantly higher power handling capability than industry standard MOSFETs. With HDMOS technology, IXYS has increased its chip sizes without a major cost penalty to the user. Unlike the popular size 3 ,4
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o-204o-247megamosf g megamos+8megamos 48id 48 megamosmegamos 13ixth40n25ixth12n95ixth12n100ixth26n50ixth11n95
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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ixfd50n20ixgd32n60bixfd75n10ixtd5n100+6ixth40n2591x0ixgh25n120aixtd5n100-5tixgd32n60b-5xixgd8n100-2l
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SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L
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buz10buz11buz11abuz71+16buz71abuz72abuz80airf520irf530irf540ssh6n80rfp60n06irf3205 irbuk417-500aesfp70n03buz91a2sk2717stmicroelectronicsbuz22ixfh13n50
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fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06ssh6n80spb32n03lsmp60n03-10lssp80n06airf540 applicationrfp60n06fsd9933a2sk790irfz30
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IRFP260 equivalent
Abstract: IXTD1N80-1T irfp450 equivalent Irfp250 irfp460 IRFP460 equivalent IXTD50N20-7X IXTD05N100-1T IXTD67N10-7X x315 IRFP254 equivalent
Contextual Info: Standard Power MOSFET and MegaMOSTMFET Chips N-Channel Enhancement-Mode Type VDSS max. TJM = 150°C RDS on @ ID max. Ciss typ. trr typ. V Ω IXTD67N10-7X IXTD75N10-7X 100 0.025 0.02 5 5 3700 3700 300 300 IXTD42N20-7X IXTD50N20-7X IFRC250-5X IFRC260-6X 200
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ixtd67n10-7xixtd75n10-7xixtd42n20-7xixtd50n20-7x+14ifrc250-5xifrc260-6xifrc254-5xifrc264-6xixtd40n30-7xirfc450-5xirfp260 equivalentixtd1n80-1tirfp450 equivalentirfp250 irfp460irfp460 equivalentixtd05n100-1tx315irfp254 equivalent
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ID 48 Megamos
Abstract: megamos megamos 48 f g megamos IXTZ35N25MB IXTH24N45 0117 megamos IXTP15N25MA ixth24n50ma IXTP22N20MA
Contextual Info: I X Y S CORP IflE D • 4bfib£5b QD00SS7 3 ■ J frrorFE Ts' and LIMOFETsw IXYS Is developing new integrated solutions that simplify the logic-topower interface while adding safe guard protection features to the power device. Because of its process compatibility with CMOS, HDMOS
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id 48 megamosmegamosmegamos 48f g megamos+6ixtz35n25mbixth24n450117 megamosixtp15n25maixth24n50maixtp22n20ma
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