IXFD75N10
Abstract: IXFD180N07-9X IXFD340N07-9Y
Contextual Info: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type VCES VCE sat @ IC Cies typ. Chip type pF tfi typ. 25°C ns V V A 2 20 1800 500 IX4X 5.65 x 4.70 222 x 185 15 mil x 1 IXSH24N60 11 High Speed Low VCE(sat) TJM = 150°C
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ixfh76n07-12ixfx180n10ixfn340n07ixfx15n8085+9ixfh67n10ixfh75n10ixfh75n10qixfh80n10qixfk170n10ixfn230n10ixfd75n10ixfd180n07-9xixfd340n07-9y
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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ixfd50n20ixgd32n60bixfd75n10ixtd5n100+6ixth40n2591x0ixgh25n120aixtd5n100-5tixgd32n60b-5xixgd8n100-2l
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IXFD14N80
Abstract: CMP 3.48 ixfh50n20 1XFH12N90 IXFN170N10 diode 348 IXFD110N20 IXFD76N07-12 IXFD21N50 IXFH21N50
Contextual Info: OIXYS HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode Type v c * D6S tN BL tn CMp max *yp * Chip elze Source 3 b e n tlw li« Equivalent device dutaahaet T * * tS O * G out line NO PF na 70 0.012 5 4400 200 IX77 8 .8 4 x 7 .1 9
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OCR Scan
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ixfd76n07-12xfd67n10ixfd75n10ixfd170n10+14ixfd42n20ixfd50n20ixfd68n201xfd90n20qixfd110n20ixfd35n30ixfd14n80cmp 3.48ixfh50n201xfh12n90ixfn170n10diode 348ixfd21n50ixfh21n50
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IXFD21N100F-8F
Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
Contextual Info: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005
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ixfd76n07-7xixfd180n07-9xixfd340n07-9yixfd180n085-9x+16ixfd280n085-9yixfd75n10-7xixfd80n10q-8xixfd170n10-9xixfd230n10-9yixfd70n15-7xixfd21n100f-8fixfd38n100q2-95diode 1581ixys ixfk21n100qixfh40n30ixfh40n50qixfk38n80q27y 6ixfb50n80q2ixfn80n50
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POWER MOSFET 4600
Abstract: MOSFET 4600 4600 mosfet IXFD80N20Q-8X IXFD40N30-7X IXFX90N20Q 1219X IXFN80N50 IXFn44N80 IXFN39N90
Contextual Info: HiPerFET Power MOSFET Chips N-Channel Enhancement-Mode with Fast Intrinsic Diode B Type " dbmm e«» m ax. m ax. m ax. Chip typ * Chip sue cHmehsfons Tm = 150°C V Q A 1XFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.012 0.006 0.004 IXFD67N10-7X XFD75N10-7X
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OCR Scan
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1xfd76n07-7xixfd180n07-9xixfd340n07-9yixfd67n10-7x+16xfd75n10-7xixfd75n10q-7xxfd80n100-8xxfd170n10-9xxfd230n10-9yixfd70n15-7xpower mosfet 4600mosfet 46004600 mosfetixfd80n20q-8xixfd40n30-7xixfx90n20q1219xixfn80n50ixfn44n80ixfn39n90
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