IXFD80N10
Abstract: mosfet 4800 SHD224514
Contextual Info: SENSITRON SEMICONDUCTOR SHD224514 TECHNICAL DATA DATA SHEET 1172, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 80A, 15 mili Ohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Very Low RDS on Low package inductance-easy to drive and protect
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shd224514ixfd80n10250mamosfet 4800 |
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IXTD08N100P-1A
Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2
Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types
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ixtd08n100p-1aixtq22n60pixfh20n80pdws20-200a+6ixfh24n80pixfk180n15pixtq22n50pdwhp16-12ixgh64n60a3ixfb50n80q2
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4800 mosfet
Contextual Info: SENSITRON SEMICONDUCTOR SHD224514 TECHNICAL DATA DATA SHEET 1172, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: 100 Volt, 80A, 15 mili Ohm Isolated Hermetic Metal Package Fast intrinsic Rectifier Very Low RDS on Low package inductance-easy to drive and protect
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shd224514ixfd80n10o-2584800 mosfet |
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IXFD75N10
Abstract: IXFD180N07-9X IXFD340N07-9Y
Contextual Info: Insulated Gate Bipolar Transistors IGBT-Chips "S" series with improved SCSOA capability Type VCES VCE sat @ IC Cies typ. Chip type pF tfi typ. 25°C ns V V A 2 20 1800 500 IX4X 5.65 x 4.70 222 x 185 15 mil x 1 IXSH24N60 11 High Speed Low VCE(sat) TJM = 150°C
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ixfh76n07-12ixfx180n10ixfn340n07ixfx15n8085+9ixfh67n10ixfh75n10ixfh75n10qixfh80n10qixfk170n10ixfn230n10ixfd75n10ixfd180n07-9xixfd340n07-9y
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IXFd50n20
Abstract: IXGD32N60B IXFD75N10 IXTD5N100 IXTH40N25 91x0 IXGH25N120A IXTD5N100-5T IXGD32N60B-5X IXGD8N100-2L
Contextual Info: Chips and DCB Ceramic Substrates Contents Page General Information for Chips IGBT Chips J-2 VCES IC VCE sat G-Series, Low VCE(sat) type G-Series, High Speed type 600 - 1200 V 600 - 1200 V 10 - 60 A 10 - 100 A 1.8 - 3.5 V 2.5 - 4.0 V J-3 S-Series, Low VCE(sat) type
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ixfd50n20ixgd32n60bixfd75n10ixtd5n100+6ixth40n2591x0ixgh25n120aixtd5n100-5tixgd32n60b-5xixgd8n100-2l
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IXFD21N100F-8F
Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50
Contextual Info: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005
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ixfd76n07-7xixfd180n07-9xixfd340n07-9yixfd180n085-9x+16ixfd280n085-9yixfd75n10-7xixfd80n10q-8xixfd170n10-9xixfd230n10-9yixfd70n15-7xixfd21n100f-8fixfd38n100q2-95diode 1581ixys ixfk21n100qixfh40n30ixfh40n50qixfk38n80q27y 6ixfb50n80q2ixfn80n50
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