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IXFH40N50Q Datasheets (3)

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IXYS

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IXFH40N50Q		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF	123.71KB	2
IXFH40N50Q2		IXYS	Discrete MOSFETs: HiPerFET Power MOSFETS	Original	PDF	566.16KB	5
IXFH40N50Q2		IXYS	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 500V 40A TO-247	Original	PDF		2

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IXYS Corporation IXFH40N50Q Transistor: N-MOSFET; unipolar; 500V; 40A; 500W; TO247-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
TME	IXFH40N50Q				1	1 $22.00 10 $17.51 100 $15.71 1000 $15.71 10000 $15.71	Get Quote
Mouser Electronics	IXFH40N50Q					1 - 10 - 100 - 1000 $15.88 10000 $15.88	Get Quote
TTI	IXFH40N50Q	Tube			300	1 - 10 - 100 - 1000 $14.90 10000 $14.90	Buy Now
Quest Components	IXFH40N50Q		600			1 $22.46 10 $22.46 100 $22.46 1000 $14.97 10000 $14.97	Buy Now
Littelfuse Inc IXFH40N50Q MOSFET, N-CH, 500V, 40A, TO-247AD-3;
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	IXFH40N50Q	Bulk			1	1 $27.80 10 $27.80 100 $27.80 1000 $27.80 10000 $27.80	Buy Now
RS	IXFH40N50Q	Bulk		8 Weeks	30	1 - 10 - 100 $23.02 1000 $23.02 10000 $23.02	Get Quote
Onlinecomponents.com	IXFH40N50Q					1 - 10 - 100 $32.80 1000 $11.98 10000 $11.98	Buy Now
Others IXFH40N50Q INSTOCK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip 1 Exchange	IXFH40N50Q		60			1 - 10 - 100 - 1000 - 10000 -	Get Quote

IXFH40N50Q Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 500 V ID25 = 40 A RDS on = 0.135 Ω IXFH40N50Q2 IXFK40N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	ixfh40n50q2 ixfk40n50q2 o-247 o-264 +1728b1	PDF
IXFH40N50Q2 Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs IXFH40N50Q2 VDSS = 500 V = 40 A ID25 RDS on = 0.14 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfh40n50q2 728b1 123b1 065b1	PDF
Contextual Info: HiPerFETTM Power MOSFETs Q2-Class VDSS = ID25 = RDS on ≤ ≤ trr IXFH40N50Q2 N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 500V 40A Ω 160mΩ 250ns TO-247 (IXFH) Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfh40n50q2 250ns o-247 40n50q2 +15-28-08-c	PDF
IXFH40N50Q2 Contextual Info: HiPerFETTM Power MOSFETs IXFH40N50Q2 VDSS = 500 V = 40 A ID25 RDS on = 0.16 Ω N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C	Original	ixfh40n50q2	PDF
IXFH40N50Q2 Abstract: IXFK40N50Q2 Contextual Info: Advanced Technical Data HiPerFETTM Power MOSFETs VDSS = 500 V ID25 = 40 A RDS on = 0.14 Ω IXFH40N50Q2 IXFK40N50Q2 N-Channel Enhancement Mode Avalanche Rated, Low Qg Low Rg, High dv/dt, Low trr trr ≤ 250 ns Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C	Original	ixfh40n50q2 ixfk40n50q2 o-247 728b1	PDF
40n50 Abstract: IXFH40N50Q2 IXFH40N50 F40N Contextual Info: HiPerFETTM Power MOSFETs Q2-Class IXFH40N50Q2 VDSS = = ID25 RDS on ≤ ≤ trr N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low Qg Low intrinsic Rg, low trr Symbol Test Conditions 500V 40A Ω 160mΩ 250ns TO-247 (IXFH) Maximum Ratings VDSS TJ = 25°C to 150°C	Original	ixfh40n50q2 250ns o-247 40n50q2 +45-28-08-c 40n50 ixfh40n50 f40n	PDF
IXTD08N100P-1A Abstract: IXTQ22N60P IXFH20N80P DWS20-200A IXFH24N80P IXFK180N15P IXTQ22N50P DWHP16-12 IXGH64N60A3 IXFB50N80Q2 Contextual Info: www.ixys.com Contents Page Symbols and Definitions Nomenclature General Informations for Chips Assembly Instructions FRED, Rectifier Diode and Thyristor Chips in Planar Design 2 2 3 4 5 IGBT Chips VCES G-Series, Low VCE sat B2 Types G-Series, Fast C2 Types	Original	ixtd08n100p-1a ixtq22n60p ixfh20n80p dws20-200a +6ixfh24n80p ixfk180n15p ixtq22n50p dwhp16-12 ixgh64n60a3 ixfb50n80q2	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 f155-6a f155-10a f165-15a +11f175-25a irfb4115 bty79 equivalent diode skn 21-04 marking code w04 sot-23 bbc 598 479 diode mw 137 600g tfk 401 s 673 vishay telefunken tfk transistor infineon transistor marking w31 jys marking transistor	PDF
IRF1830G Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696 Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Inﬁneon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23	Original	ao4405 ao4407 ao4408 ao4409 +16ao4410 ao4411 ao4413 ao4415 ao4422 ao4700 irf1830g irf1830 transistor irf1830g apm2054n equivalent apm2054n ap85l02h ap70n03s 2sk3683 ap70l02h 2sk2696	PDF
IXFD21N100F-8F Abstract: IXFD38N100Q2-95 DIODE 1581 IXYS IXFK21N100Q IXFH40N30 IXFH40N50Q IXFK38N80Q2 7Y 6 IXFB50N80Q2 IXFN80N50 Contextual Info: Chip-Shortform2004.pmd HiPerFETTM Power MOSFET Type VDSS max. RDS ON max. Chip type Chip size dimensions Source bond wire recommended Equivalent device data sheet 8 26.10.2004, 12:44 V Ω mm mils IXFD76N07-7X IXFD180N07-9X IXFD340N07-9Y 70 0.015 0.007 0.005	Original	ixfd76n07-7x ixfd180n07-9x ixfd340n07-9y ixfd180n085-9x +16ixfd280n085-9y ixfd75n10-7x ixfd80n10q-8x ixfd170n10-9x ixfd230n10-9y ixfd70n15-7x ixfd21n100f-8f ixfd38n100q2-95 diode 1581 ixys ixfk21n100q ixfh40n30 ixfh40n50q ixfk38n80q2 7y 6 ixfb50n80q2 ixfn80n50	PDF