IRFZ48N Search Results
IRFZ48N Datasheets (28)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRFZ48N | International Rectifier | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ48N with Standard Packaging | Original | 110.88KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48N | International Rectifier | HEXFET Power MOSFET | Original | 134.86KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48N | International Rectifier | HEXFET Power MOSFET | Original | 106.69KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48N | Philips Semiconductors | N-channel enhancement mode TrenchMOS transistor | Original | 51.07KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48N | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48N | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 55V, 53A, Pkg Style TO-220AB | Scan | 55.43KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NL | International Rectifier | HEXFET Power MOSFET | Original | 132.95KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NL | International Rectifier | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ48NL with Standard Packaging | Original | 136.85KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NL | International Rectifier | HEXFET Power MOSFET | Original | 158.98KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NL | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NLPBF | International Rectifier | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ48NL with Lead Free Packaging | Original | 136.85KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NLPBF | International Rectifier | 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package | Original | 132.96KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NPBF | International Rectifier | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRFZ48N in lead free packaging | Original | 110.88KB | 9 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NPBF | International Rectifier | 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package | Original | 106.68KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NS | International Rectifier | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ48NS with Standard Packaging | Original | 136.85KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NS | International Rectifier | HEXFET Power MOSFET | Original | 158.98KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NS | International Rectifier | HEXFET - Power MOSFET | Original | 132.95KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NS | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NSPBF | International Rectifier | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ48NS with Lead Free Packaging | Original | 136.85KB | 11 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFZ48NSPBF | International Rectifier | 55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package | Original | 132.96KB | 10 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFZ48N Price and Stock
Infineon Technologies AG IRFZ48NPBFTransistor: N-MOSFET; unipolar; 55V; 64A; 94W; TO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFZ48NPBF | 2,531 | 1 |
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IRFZ48NPBF | 11,025 | 21 |
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| IRFZ48NPBF | 2,000 | 4 |
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IRFZ48NPBF | Bulk | 1 |
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| IRFZ48NPBF | Tube | 17 Weeks | 2,000 |
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IRFZ48NPBF | 8,165 |
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IRFZ48NPBF | 11,041 | 17 Weeks | 1 |
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| IRFZ48NPBF | 2,000 | 13 Weeks | 1 |
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IRFZ48NPBF | Bulk | 7,467 | 1 |
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IRFZ48NPBF | Bulk | 1 |
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IRFZ48NPBF | 387 | 1 |
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| IRFZ48NPBF | 142 | 1 |
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IRFZ48NPBF | 423 |
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| IRFZ48NPBF | 309 |
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IRFZ48NPBF | 286 | 1 |
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IRFZ48NPBF | Tube | 3,000 | 1,000 |
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IRFZ48NPBF | 3,000 | 14 Weeks | 1,000 |
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IRFZ48NPBF | 144,610 |
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Infineon Technologies AG IRFZ48NSTRLPBFTransistor: N-MOSFET; unipolar; 55V; 64A; 140W; D2PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFZ48NSTRLPBF | 800 |
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IRFZ48NSTRLPBF | 12,000 | 800 |
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| IRFZ48NSTRLPBF | 2,571 | 4 |
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IRFZ48NSTRLPBF | Tape & Reel | 15 Weeks | 800 |
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IRFZ48NSTRLPBF | 26,152 |
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IRFZ48NSTRLPBF | 12,000 | 15 Weeks | 800 |
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| IRFZ48NSTRLPBF | Cut Strips | 2,571 | 21 Weeks | 1 |
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IRFZ48NSTRLPBF | Tape & Reel | 684 | 100 |
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| IRFZ48NSTRLPBF | Cut Tape | 684 | 1 |
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IRFZ48NSTRLPBF | Bulk | 800 |
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Get Quote | ||||||
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IRFZ48NSTRLPBF | 4,838 |
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Get Quote | |||||||
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IRFZ48NSTRLPBF | Tape & Reel | 800 | 800 |
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IRFZ48NSTRLPBF | 800 | 22 Weeks | 800 |
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Infineon Technologies AG IRFZ48NSPBFMOSFET, POWER, N-CH, VDSS 55V, RDS(ON) 14 MILLIOHMS, ID 64A, D2PAK, PD 130W, VGS +/-20V |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFZ48NSPBF | Bulk | 600 |
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Get Quote | ||||||
Infineon Technologies AG IRFZ48NLPBFMOSFET, 55V, 64A, 14 MOHM, 54 NC QG, TO-262 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFZ48NLPBF | Bulk | 800 |
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Get Quote | ||||||
Infineon Technologies AG IRFZ48NSTRRPBFMOSFET, 55V, 64A, 14 MOHM, 54 NC QG, D2-PAK |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFZ48NSTRRPBF | Bulk | 800 |
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Get Quote | ||||||
IRFZ48N Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRFZ48N
Abstract: equivalent IRFZ48N
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Original |
irfz48no-220o-220abequivalent irfz48n | |
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Contextual Info: International S Rectifier PD 9.1406 IRFZ48N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Dynam ic dv/dt Rating 175°C Operating Tem perature Fast Switching V dss = 55 V ^D S on = 0 . 0 1 6 D Fully Avalanche Rated Id = 5 3 A Description utilize advanced processing techniques to achieve |
OCR Scan |
irfz48no-2200d5344b | |
IRFZ48NContextual Info: PD - 9.1406A International IGR Rectifier IRFZ48N HEXFET Power MOSFET • • • • • Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Vqss = 55 V ^ D S o n = 0.0160 lD = 64A Description |
OCR Scan |
irfz48n | |
sd32aContextual Info: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power M OSFET • • • • • • Advanced Process Technology Surface Mount IRFZ48NS Low-profile through-hole (IRFZ48NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 55V |
OCR Scan |
irfz48nsirfz48nlirfz48ns/lpo000+2 | |
IRFz48N MOSFET
Abstract: IRFZ48N equivalent IRFZ48N
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Original |
irfz48no-220irfz48n mosfetequivalent irfz48n | |
AN-994
Abstract: IRFZ48NL IRFZ48NS IRL3103L n mosfet low vgs
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Original |
irfz48nspbfirfz48nlpbfirfz48nsirfz48nl+4 | |
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Contextual Info: PD - 94991A IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description |
Original |
4991airfz48npbfo-220 | |
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Contextual Info: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description |
Original |
94991birfz48npbfo-220 | |
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Contextual Info: PD - 94991B IRFZ48NPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description |
Original |
94991birfz48npbfo-220 | |
IRFZ48N
Abstract: IRFz48N MOSFET n-channel mosfet transistor equivalent IRFZ48N IRFZ48N equivalent mosfet transistor TRANSISTOR mosfet
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irfz48nirfz48n mosfetn-channel mosfet transistorequivalent irfz48n+3 | |
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Contextual Info: PRELIMINARY International M R Rectifier PD 9.1408 IRFZ48NS HEXFET Power MOSFET • Advanced Process Technology • Surface Mount • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description VDSS = 55V |
OCR Scan |
irfz48ns | |
IRFz48N MOSFET
Abstract: equivalent IRFZ48N IRFZ48N IRFZ48N equivalent Mosfet IRFZ48N
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Original |
irfz48no-220irfz48n mosfetequivalent irfz48n+2 | |
AN-994
Abstract: IRFZ48NL IRFZ48NS IRL3103L
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Original |
irfz48nspbfirfz48nlpbfirfz48nsirfz48nl+3 | |
package marking y6
Abstract: 220AB marking 7S
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Original |
irfz48npbfo-220abpackage marking y6220ab+1 | |
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Contextual Info: PD - 91406 IRFZ48N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description Advanced HEXFET® Power MOSFETs from International |
Original |
irfz48no-220 | |
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Contextual Info: PD - 9.1408B Advanced Process Technology Surface Mount IRFZ48NS l Low-profile through-hole (IRFZ48NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ48NS IRFZ48NL l HEXFET Power MOSFET l Advanced HEXFET ® Power MOSFETs from |
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1408birfz48nsirfz48nl | |
IRFz48N MOSFET
Abstract: IRFZ48N
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Original |
irfz48no-220irfz48n mosfet | |
TO-262
Abstract: part marking information Marking information
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Original |
irfz48ns/lo-262to-262part marking information+1 | |
IRFZ48NL
Abstract: 1408B AN-994 IRFZ48NS
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Original |
1408birfz48nsirfz48nlan-994 | |
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Contextual Info: PD - 9.1408A International IQ R Rectifier IRFZ48NS/L HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRFZ48NS • Low-profilethrough-hole(IRFZ48NL) • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 55V |
OCR Scan |
irfz48nsirfz48nl | |
IRFZ48N
Abstract: IRFz48N MOSFET
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OCR Scan |
irfz48nirfz48n mosfet | |
AN-994
Abstract: IRFZ48N IRFZ48NS
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Original |
irfz48nsan-994irfz48n | |
DSAUTAZ0071
Abstract: TO-262
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Original |
o-262dsautaz0071to-262 | |
IRFZ48NPBFContextual Info: PD - 94991 IRFZ48NPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 55V RDS on = 14mΩ G ID = 64A S Description |
Original |
irfz48npbfo-220for-220ab | |