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SI9945 Datasheets (11)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
Si9945AEY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
SI9945AEY	Vishay	Dual N-Channel 60-V (D-S), 175Â°C MOSFET	Original	PDF	52.15KB	4
Si9945AEY	Vishay Intertechnology	Dual N-Channel Enhancement-Mode MOSFET	Original	PDF	26.78KB	3
SI9945AEY	General Semiconductor	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, N-Channel, 60V, Dual, Pkg Style SO-8	Scan	PDF	79.97KB	1
Si9945AEY SPICE Device Model	Vishay	Dual N-Channel Enhancement-Mode MOSFET	Original	PDF	207.23KB	3
SI9945AEY-T1	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 3.7A 8SOIC	Original	PDF		8
SI9945BDY-T1-GE3	Vishay Siliconix	FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 60V 5.3A 8-SOIC	Original	PDF		10
SI9945DY	Fairchild Semiconductor	Dual N-Channel Enhancement Mode MOSFET	Original	PDF	238.78KB	3
Si9945DY	Fairchild Semiconductor	Dual N-Channel Enhancement Mode MOSFET	Original	PDF	238.76KB	3
SI9945DY	Temic Semiconductors	Dual N-Channel Enhancement-Mode MOSFET	Original	PDF	58.14KB	4
Si9945DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67

SI9945 Price and Stock

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onsemi SI9945DY - Tape and Reel (Alt: SI9945DY)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI9945DY	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI9945CDY-T1-GE3 - Tape and Reel (Alt: SI9945CDY-T1-GE3)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	SI9945CDY-T1-GE3	Tape & Reel		52 Weeks	5,000	1 - 10 - 100 - 1000 - 10000 $0.20	Buy Now
Newark ()	SI9945CDY-T1-GE3	Cut Tape			10	1 - 10 $0.68 100 $0.45 1000 $0.34 10000 $0.34	Buy Now
	SI9945CDY-T1-GE3	Tape & Reel			100	1 - 10 - 100 $0.45 1000 $0.34 10000 $0.34	Buy Now
EBV Elektronik	SI9945CDY-T1-GE3			53 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies SI9945BDY-T1-GE3 Mosfet, N-Ch, 60V, 5.3A, Soic; \|Vishay SI9945BDY-T1-GE3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark ()	SI9945BDY-T1-GE3	Cut Tape			2,500	1 - 10 - 100 - 1000 - 10000 $0.87	Buy Now
	SI9945BDY-T1-GE3	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.87	Buy Now
	SI9945BDY-T1-GE3	Tape & Reel			2,500	1 - 10 - 100 - 1000 - 10000 $0.38	Buy Now
Bristol Electronics	SI9945BDY-T1-GE3		1,308			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip 1 Exchange	SI9945BDY-T1-GE3		1,950			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Component Electronics, Inc	SI9945BDY-T1-GE3		800			1 $7.69 10 $7.69 100 $5.77 1000 $5.00 10000 $5.00	Buy Now
Vishay Siliconix SI9945AEY-T1-E3 MOSFET, POWER; DUAL N; 60 V; + 20 V; 2.4 W; SO-8; 75 A (CONTINUOUS); -55 DEGC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI9945AEY-T1-E3	Bulk			1	1 $0.92 10 $0.92 100 $0.88 1000 $0.75 10000 $0.75	Get Quote
Vishay Siliconix SI9945BDY-T1-GE3 MOSFET, DUAL N-CH, VDS 60V, VGS +/- 20V, RDS(ON) 46MOHM, ID 5.3, SO-8, PD 3.1W
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	SI9945BDY-T1-GE3	Bulk		72 Weeks	2,500	1 - 10 - 100 - 1000 - 10000 $0.45	Get Quote

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SI9945 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
14093 Abstract: 75431 Contextual Info: Si9945BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	si9945bdy an609 3203u 3659m +78029m 3567u 2443m 3998m 0795m 14093 75431	PDF
si9945b Abstract: SI9945BDY SI9945BDY-T1-GE si9945bd Contextual Info: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si9945bdy si9945bdy-t1-ge3 2011/65/eu 2002/95/ec +412-mar-12 si9945b si9945bdy-t1-ge si9945bd	PDF
Contextual Info: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	si9945dy	PDF
Si9945AEY-T1-E3 Abstract: Si9945AEY SI9945 Si9945AEY-T1-GE3 SI9945A Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	si9945aey 2002/95/ec si9945aey-t1-e3 si9945aey-t1-ge3 +318-jul-08 si9945 si9945a	PDF
SI9945AEY-T1 Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 60 ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs	Original	si9945aey 2002/95/ec si9945aey-t1-e3 si9945aey-t1-ge3 +211-mar-11 si9945aey-t1	PDF
Si9945AEY Abstract: Si9945AEY-T1 Si9945AEY-T1-E3 Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated	Original	si9945aey si9945aey-t1 si9945aey-t1-e3 08-apr-05	PDF
si9950 Abstract: Si9950DY Si9948DY SI9945 Si9945DY Contextual Info: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT	Original	si9950dy si9948dy si9945dy so-16 +4p-38889--rev 17-oct-94 si9950 si9945	PDF
SI9959DY Abstract: SI9945 Si9945DY SI9959 Contextual Info: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET	Original	si9959dy si9945dy s-47958--rev 15-apr-96 +2si9945 si9959	PDF
Si9945AEY Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET	Original	si9945aey 08-apr-05	PDF
Si9959DY Abstract: SI9945 Si9945DY A86V Contextual Info: Si9959DY Dual N-Channel Enhancement-Mode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 N-Channel MOSFET	Original	si9959dy si9945dy s-47958--rev 15-apr-96 +2si9945 a86v	PDF
Si9945aey Abstract: SI9945 Contextual Info: SPICE Device Model Si9945AEY Vishay Siliconix Dual N-Channel Enhancement-Mode MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si9945aey 18-apr-01 si9945	PDF
SI9945 Abstract: Si9945AEY S-5725 Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET PRODUCT SUMMARY VDS (V) 60 rDS(on) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET	Original	si9945aey s-57253--rev 24-feb-98 si9945 +1s-5725	PDF
Si9945AEY-T1 Abstract: SI9945 SQ9945AEY-T1 AECQ101 SI9945AEY Si9945AEY SPICE Device Model Contextual Info: Si9945AEY/SQ9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated	Original	si9945aey/sq9945aey si9945aey-t1 sq9945aey-t1 aecq101 +408-apr-05 si9945 si9945aey si9945aey spice device model	PDF
Si9945BDY-T1-GE3 Abstract: Si9945BDY SI9945BDY-T1-GE Contextual Info: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si9945bdy si9945bdy-t1-ge3 11-mar-11 si9945bdy-t1-ge	PDF

Si9955DY Siliconix Abstract: Si9945DY Si9955DY Contextual Info: Si9955DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 50 rDS(on) (W) ID (A) 0.13 @ VGS = 10 V "3.0 0.20 @ VGS = 4.5 V "1.5 Recommend upgrade: Si9945DY D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 Top View G1 G2 S1	Original	si9955dy si9945dy p38889rev si9955dy siliconix	PDF
Si9959DY Abstract: Si9945DY Contextual Info: Si9959DY Siliconix Dual NĆChannel EnhancementĆMode MOSFET Product Summary VDS V 60 rDS(on) (W) ID (A) 0.30 @ VGS = 10 V "2.0 0.50 @ VGS = 5 V "0.6 For higher performance see Si9945DY D1 D1 D2 D2 SOĆ8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View	Original	si9959dy si9945dy s-42911--rev	PDF
Contextual Info: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si9945bdy si9945bdy-t1-ge3 2002/95/ec 2011/65/eu +2js709a 02-oct-12	PDF
SI9945 Abstract: Si9945AEY Contextual Info: SPICE Device Model Si9945AEY Dual N-Channel Enhancement-Mode MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switchmode • Applicable Over a -55 to 125°C Temperature Range	Original	si9945aey si9945	PDF
SI9950DY Abstract: si9950 6V25V SI9945 Si9948DY Si9945DY Contextual Info: Si9950DY Complementary MOSFET Half-Bridge Product Summary VDS V N- or P-Channel 50 rDS(on) (W) ID (A) 0.3 @ VGS = 10 V "2.0 1.0 @ VGS = 5 V "1.2 Alternate Solution: one Si9948DY and one Si9945DY V+ V+ SO-16 GND 1 16 GND OUTPUT 2 15 OUTPUT OUTPUT 3 14 OUTPUT	Original	si9950dy si9948dy si9945dy so-16 +5p-38889--rev 17-oct-94 si9950 6v25v si9945	PDF
SI9945BDY-T1-GE3 Abstract: SI9945 SI9945BDY si9945b Contextual Info: New Product Si9945BDY Vishay Siliconix Dual N-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY RDS(on) (Ω) ID (A)a 0.058 at VGS = 10 V 5.3 0.072 at VGS = 4.5 V 4.7 VDS (V) 60 Qg (Typ.) 13 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET	Original	si9945bdy si9945bdy-t1-ge3 18-jul-08 si9945 +1si9945b	PDF
SI9945AEY-T1-E3 Abstract: Si9945aey SI9945 SI9945AEY-T1 Contextual Info: Si9945AEY Vishay Siliconix Dual N-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) 60 rDS(on) (Ω) ID (A) 0.080 at VGS = 10 V ± 3.7 0.100 at VGS = 4.5 V ± 3.4 • TrenchFET Power MOSFETs • Maximum Junction Temperature: 175 °C Rated	Original	si9945aey si9945aey-t1 si9945aey-t1-e3 18-jul-08 +1si9945	PDF
SI9945AEY-T1-E3 Abstract: SI9945BDY-T1-GE3 Si9945aey Si9945BDY SI9945 Si9945AEY-T1 MOSFET 20V Contextual Info: Specification Comparison Vishay Siliconix Si9945BDY vs. Si9945AEY Description: Package: Pin Out: Dual N-Channel, 20-V D-S MOSFET SO-8 Identical Part Number Replacements: Si9945BDY-T1-GE3 replaces Si9945AEY-T1-E3 Si9945BDY-T1-GE3 replaces Si9945AEY-T1 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted	Original	si9945bdy si9945aey si9945bdy-t1-ge3 si9945aey-t1-e3 +4si9945aey-t1 25-may-09 si9945 mosfet 20v	PDF
SI9945 Abstract: Si9945DY Contextual Info: Si9945DY* Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	si9945dy si9945	PDF
SI9945 Abstract: Siliconix Si9945AEY Contextual Info: Si9945AEY Siliconix Dual N-Channel 60-V D-S , 175_C MOSFET New Product PRODUCT SUMMARY VDS (V) 60 RDS(ON) (W) ID (A) 0.080 @ VGS = 10 V "3.7 0.100 @ VGS = 4.5 V "3.4 D1 D1 D2 D2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View S1 S2 N-Channel MOSFET	Original	si9945aey s-57253--rev 24-feb-98 si9945 +1siliconix	PDF

SI9945 Search Results

SI9945 Datasheets (11)

SI9945 Price and Stock

onsemi SI9945DY

Vishay Intertechnologies SI9945CDY-T1-GE3

Vishay Intertechnologies SI9945BDY-T1-GE3

Vishay Siliconix SI9945AEY-T1-E3

Vishay Siliconix SI9945BDY-T1-GE3

SI9945 Datasheets Context Search

14093

si9945b

Si9945AEY-T1-E3

SI9945AEY-T1

Si9945AEY

si9950

SI9959DY

Si9945AEY

Si9959DY

Si9945aey

SI9945

Si9945AEY-T1

Si9945BDY-T1-GE3

Si9955DY Siliconix

Si9959DY

SI9945

SI9950DY

SI9945BDY-T1-GE3

SI9945AEY-T1-E3

SI9945AEY-T1-E3

SI9945

SI9945