AECQ101 Search Results

bzx55c10

Abstract: BZX55C12 BZX55-C5V1 BZX55C5V1 BZX55-C18 bzx55c18 bzx55c13 bzx55c15 BZX55C24 BZX55C2V7
Contextual Info: BZX55C2V4~BZX55C100 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 100 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • Manufactured in accordance with AECQ101

BZX55-C13

Abstract: BZX55-C8V2 BZX55C13 BZX55C6V2 BZX55C5V1
Contextual Info: BZX55C2V4~BZX55C100 AXIAL LEAD ZENER DIODES VOLTAGE 2.4 to 100 Volts 500 mWatts POWER FEATURES • Planar Die construction • 500mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Acqire quality system certificate : TS16949 • Manufactured in accordance with AECQ101

Contextual Info: S1A - S1M CREAT BY ART Pb 1.0AMP Surface Mount Rectifiers SMA/DO-214AC RoHS COMPLIANCE Features — For surface mounted application — Glass passivated chip junction — Low forward voltage drop — High current capability — Easy pick and place — High surge current capability

Contextual Info: TK20S06K3L MOSFETs Silicon N-channel MOS U-MOS  TK20S06K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 23 mΩ (typ.) (VGS = 10 V) (2)

MUR360S

Abstract: 320s
Contextual Info: MUR305S - MUR360S CREAT BY ART Pb RoHS 3.0 AMPS. Surface Mount Ultrafast Power Rectifiers SMC/DO-214AB COMPLIANCE Features — For surface mounted application — Glass passivated junction chip — Low profile package — Built-in strain relief — Qualified as per AEC-Q101

Contextual Info: TK80F06K3L MOSFETs Silicon N-channel MOS U-MOS TK80F06K3L 1. Applications • Automotive • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 6.2 mΩ (typ.) (VGS = 10 V) (2)

Contextual Info: ESH2B - ESH2D CREAT BY ART 2.0AMPS Surface Mount Super Fast Rectifiers SMB/DO-214AA Pb RoHS COMPLIANCE Features — Glass passivated junction chip — For surface mounted application — Low profile package — Built-in strain rellef — Ideal for automated placement

Contextual Info: TJ150F04M3L MOSFETs Silicon P-Channel MOS U-MOS TJ150F04M3L 1. Applications • Automotive • Relay Drivers • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 2.2 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V)

TK70J04K3Z

Contextual Info: TK70J04K3Z MOSFETs Silicon N-channel MOS U-MOS TK70J04K3Z 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.2 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V)

Contextual Info: MBR30H100CT CREAT BY ART Pb 30.0AMPS. Schottky Barrier Rectifiers TO-220AB RoHS COMPLIANCE Features — Low power loss, high efficiency — High current capability, low forward voltage drop — Plastic material used carriers Underwriters Laboratory Classification 94V-0

Contextual Info: TK100F04K3L MOSFETs Silicon N-channel MOS U-MOS TK100F04K3L 1. Applications • Switching Voltage Regulators • DC-DC Converters • Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 2.5 mΩ (typ.) (VGS = 10 V)

ES1JL

Abstract: ru 94v-0
Contextual Info: ES1AL thru ES1JL Taiwan Semiconductor CREAT BY ART Surface Mount Super Fast Rectifiers FEATURES - Glass passivated junction chip - Ideal for automated placement - Low profile package - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: ICTE5 thru ICTE18C, 1N6373 thru 1N6386 Vishay General Semiconductor TRANSZORB Transient Voltage Suppressors FEATURES • Glass passivated chip junction • Available in uni-directional and bi-directional • 1500 W peak pulse power capability with a 10/1000 s waveform, repetitive

Contextual Info: SRAF520 thru SRAF5150 Taiwan Semiconductor CREAT BY ART Isolated Schottky Barrier Rectifiers FEATURES - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - UL Recognized File # E-326243 - Compliant to RoHS Directive 2011/65/EU and

Contextual Info: RS1JLS thru RS1MLS Taiwan Semiconductor CREAT BY ART Surface Mount Fast Recovery Rectifiers FEATURES - Ideal for automated placement - Compact package size - High surge current capability - Low power loss, high efficiency - Moisture sensitivity level: level 1, per J-STD-020

Contextual Info: SR202 thru SR220 Taiwan Semiconductor CREAT BY ART Schottky Barrier Rectifier FEATURES - Low forward voltage drop - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and

ZXMP6A13FTA

Abstract: ZXMP6A13FT ZXMP6A13F
Contextual Info: A Product Line of Diodes Incorporated ZXMP6A13F 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • • • • • • ID RDS(on) TA = 25°C 400mΩ @ VGS = -10V -1.1A 600mΩ @ VGS = -4.5V -0.9A -60V Mechanical Data Description and Applications

BZT52C5V1-V

Abstract: BZT52C43V
Contextual Info: BZT52-V-Series Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar power zener diodes • These diodes are also available in other case styles and other configurations including: the SOT-23 case with type designation BZX84 series, the dual zener

Contextual Info: PMEG2005CT 500 mA low VF dual MEGA Schottky barrier rectifier Rev. 2 — 22 June 2010 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier in common cathode configuration with an integrated guard ring for stress protection,

BY252P

Contextual Info: BY251P thru BY255P Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in

AAK marking code

Abstract: nsi45035 nsi45035jzt1g DN060 AAKG marking code driver AAK AND83
Contextual Info: NSI45035JZT1G Adjustable Constant Current Regulator & LED Driver 45 V, 35 − 70 mA + 15%, 1.5 W Package The adjustable constant current regulator CCR is a simple, economical and robust device designed to provide a cost effective solution for regulating current in LEDs (similar to Constant Current

SOT 23 marking code a6 diode

Contextual Info: BAS16-V Vishay Semiconductors Small Signal Fast Switching Diode Features • Silicon Epitaxial Planar Diode • Ultra fast switching speed • Surface mount package ideally suited for automatic insertion • High conductance • AEC-Q101 qualified • Compliant to RoHS directive 2002/95/EC and in

Contextual Info: P300A thru P300M Vishay General Semiconductor General Purpose Plastic Rectifier FEATURES • Low forward voltage drop • Low leakage current, IR less than 0.1 A • High forward surge capability • Solder dip 275 °C max. 10 s, per JESD 22-B106 • Compliant to RoHS directive 2002/95/EC and in

SMD TRANSISTOR MARKING w7

Contextual Info: PBHV9115T 150 V, 1 A PNP high-voltage low VCEsat BISS transistor Rev. 02 — 9 January 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.