IRFBF30 Search Results
IRFBF30 Datasheets (18)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A TO-220AB | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30 | International Rectifier | HEXFET Power MOSFET | Scan | 169.96KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30 | International Rectifier | TO-220 HEXFET Power MOSFET | Scan | 41.94KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30 | International Rectifier | TO-220 Plastic Package HEXFETs | Scan | 100.13KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30 | International Rectifier | Power MOSFET(Vdss=900V, Rds(on)=3.7ohm, Id=3.6A) | Scan | 169.96KB | 6 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30 | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 900V, 3.6A, Pkg Style TO-220AB | Scan | 50.01KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 106.71KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 39.09KB | 1 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30L | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A TO-262 | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30PBF | International Rectifier | HEXFET Power MOSFET | Original | 247.48KB | 8 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30PBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A TO-220AB | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30PBF-BE3 | Vishay Siliconix | MOSFET N-CH 900V 3.6A TO220AB | Original | 1.17MB | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30S | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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| IRFBF30SPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30STRL | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30STRLPBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
| IRFBF30STRR | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 900V 3.6A D2PAK | Original | 9 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IRFBF30 Price and Stock
Vishay Siliconix IRFBF30STRLPBFMOSFET N-CH 900V 3.6A TO263 |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFBF30STRLPBF | Cut Tape | 1,389 | 1 |
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Vishay Siliconix IRFBF30PBFMOSFET N-CH 900V 3.6A TO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFBF30PBF | Tube | 527 | 1 |
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Buy Now | |||||
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IRFBF30PBF | 224 |
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Get Quote | |||||||
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IRFBF30PBF | 700 | 1 |
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Buy Now | ||||||
Vishay Siliconix IRFBF30MOSFET N-CH 900V 3.6A TO220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFBF30 | Tube |
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Buy Now | |||||||
Vishay Siliconix IRFBF30LMOSFET N-CH 900V 3.6A I2PAK |
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IRFBF30L | Tube |
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Vishay Siliconix IRFBF30SMOSFET N-CH 900V 3.6A D2PAK |
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IRFBF30S | Tube | 1,000 |
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IRFBF30 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: International Rectifier i» • • • • • IRFBF30 r HEXFET Power MOSFET PD-9.616A M Ô 5 5 4 S E OOlM^fib 545 • INR INTERNATIONAL RECTIFIER Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements |
OCR Scan |
IRFBF30 O-220 55MS5 | |
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Contextual Info: PD - 95631 IRFBF30PbF • Lead-Free Document Number: 91122 8/4/04 www.vishay.com 1 IRFBF30PbF Document Number: 91122 www.vishay.com 2 IRFBF30PbF Document Number: 91122 www.vishay.com 3 IRFBF30PbF Document Number: 91122 www.vishay.com 4 IRFBF30PbF Document Number: 91122 |
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IRFBF30PbF 12-Mar-07 | |
IRFBF30
Abstract: SiHFBF30 SiHFBF30-E3
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IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 11-Mar-11 IRFBF30 SiHFBF30-E3 | |
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Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) |
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IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
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Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) |
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IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
irfbf30
Abstract: SiHFBF30 SiHFBF30-E3
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IRFBF30, SiHFBF30 O-220 O-220 18-Jul-08 irfbf30 SiHFBF30-E3 | |
AN609
Abstract: IRFBF30 SiHFBF30
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IRFBF30 SiHFBF30 AN609, 20-Apr-10 AN609 | |
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Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) |
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IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 11-Mar-11 | |
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Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements |
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IRFBF30, SiHFBF30 O-220 O-220 12-Mar-07 | |
IRFBF30S
Abstract: IRFBF30SPBF SiHFBF30S SiHFBF30S-E3
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IRFBF30S, SiHFBF30S 2002/95/EC O-263) 18-Jul-08 IRFBF30S IRFBF30SPBF SiHFBF30S-E3 | |
mosfet 9452
Abstract: SiHFBF30S AN609 IRFBF30S
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IRFBF30S SiHFBF30S AN609, 20-Apr-10 mosfet 9452 AN609 | |
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Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) |
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IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
IRFBContextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: IRFBF30 TO-220AB HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: |
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O-220AB IRFBF30 IRFB | |
irfbf30
Abstract: Diode IOR 10 dc
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OCR Scan |
IRFBF30 O-220 T0-220 lrTtQIT13tà irfbf30 Diode IOR 10 dc | |
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Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) |
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IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
diode 132 E
Abstract: diode IR 132 E 95631
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IRFBF30PbF O-220AB. O-220AB diode 132 E diode IR 132 E 95631 | |
SiHFBF30SContextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements |
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IRFBF30S, SiHFBF30S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 | |
IRFBF30
Abstract: SiHFBF30 SiHFBF30-E3
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IRFBF30, SiHFBF30 O-220 O-220 18-Jul-08 IRFBF30 SiHFBF30-E3 | |
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Contextual Info: PD - 95631 IRFBF30PbF • Lead-Free Document Number: 91122 8/4/04 www.vishay.com 1 IRFBF30PbF Document Number: 91122 www.vishay.com 2 IRFBF30PbF Document Number: 91122 www.vishay.com 3 IRFBF30PbF Document Number: 91122 www.vishay.com 4 IRFBF30PbF Document Number: 91122 |
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IRFBF30PbF 08-Mar-07 | |
SiHFBF30S
Abstract: IRFBF30S SiHFBF30S-E3
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IRFBF30S, SiHFBF30S 2002/95/EC O-263) 11-Mar-11 IRFBF30S SiHFBF30S-E3 | |
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Contextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements |
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IRFBF30S, SiHFBF30S 2002/95/EC O-263) 11-Mar-11 | |
SiHFBF30SContextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements |
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IRFBF30S, SiHFBF30S 2002/95/EC O-263) 11-Mar-11 | |
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Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC) |
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IRFBF30, SiHFBF30 2002/95/EC O-220AB O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |
SiHFBF30SContextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements |
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IRFBF30S, SiHFBF30S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A | |