SIHFBF30 Search Results

IRFBF30

Abstract: SiHFBF30 SiHFBF30-E3
Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

irfbf30

Abstract: SiHFBF30 SiHFBF30-E3
Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements

AN609

Abstract: IRFBF30 SiHFBF30
Contextual Info: IRFBF30_RC, SiHFBF30_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements

IRFBF30S

Abstract: IRFBF30SPBF SiHFBF30S SiHFBF30S-E3
Contextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling Qgd (nC) 42

mosfet 9452

Abstract: SiHFBF30S AN609 IRFBF30S
Contextual Info: IRFBF30S_RC, SiHFBF30S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,

Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

SiHFBF30S

Contextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements

Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

SiHFBF30S

Contextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements

IRFBF30

Abstract: SiHFBF30 SiHFBF30-E3
Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 3.7 RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements

Contextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements

SiHFBF30S

Contextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements

Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)

SiHFBF30S

Contextual Info: IRFBF30S, SiHFBF30S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching • Ease of Paralleling • Simple Drive Requirements

Contextual Info: IRFBF30, SiHFBF30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 900 RDS(on) () VGS = 10 V RoHS* Qg (Max.) (nC) 78 • Fast Switching Qgs (nC) 10 • Ease of Paralleling 42 • Simple Drive Requirements Qgd (nC)