diode T88
Abstract: f g megamos ixys ixtn 79n20 megamos megamos 13 LD25 IXTN79N20 ixtn 79n20 79N20 425al
Contextual Info: MegaMOS FET IXTN79N20 V DSS I D25 RDS on = 200 V = 85 A = 25 m ß N-Channel Enhancement Mode OD G 1 r Ks Symbol Test Conditions V DSS TJ = VDGR VGS VGSM ¿S Maximum Ratings 200 V Tj = 25°C to 150°C; RGS = 10 k£2 200 V Continuous ±20 V T ransient ±30
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ixtn79n20ot-227diode t88f g megamos+7ixys ixtn 79n20megamosmegamos 13ld25ixtn 79n2079n20425al
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Contextual Info: MegaMOS FET IXTN79N20 V DSS = 200 V ^ D 2 5 _ D _ DS on ” 85 A 25 mQ N-Channel Enhancement Mode OD G 1 KS r ¿ s Maximum Ratings miniBLOC, SOT-227 B 200 V s 200 V Continuous ±20 V Transient ±30 V Symbol Test Conditions VDSS Tj = 25°C to 150°C v DGR
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ixtn79n20ot-2274bfib22bdq02201+279n204bflb22b
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IXTN79N20
Contextual Info: IXTN79N20 VDSS MegaMOS FET D25 RDS on = 200 V = 85 A = 25 mil N-Channel Enhancement Mode Sym bol V ¥ dss Test C onditions Maximum Ratings Tj = 25°C to150°C 200 V Tj = 25°C to 150°C; RGS = 10 k£S 200 V Vas Continuous ±20 V Vas« T ransient ±30 V
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IXTN79N20
Abstract: ixys ixtn 79n20 sra 2201 79N20 4bob ixtn 79n20
Contextual Info: IXTN79N20 V DSS MegaMOS FET I D25 RDS on N-Channel Enhancement Mode = 200 V = 85 A = 25 m fì OD e 1 KS ^ 1 ÒS Maximum Ratings Symbol Test Conditions V DSS Tj = 25°C to 1 50°C 200 V VDGR Tj = 25°C to 150°C; RGS= 10 kQ 200 V VGS Continuous ±20 V VCSM
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ixtn79n20ot-227ixys ixtn 79n20sra 2201+379n204bobixtn 79n20
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640
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IXTN79N20
Abstract: IXFN48N50 IXFN120N20 IXFN27N80 IXFN36N60 IXFN73N30 IXTN21N100 IXFN106N20 IXFN130N30 IXFN150N15
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 CunoBbie TpaH3MCTopbi MOSFET b K o p n y c e SOT-227B (ISOTOP) $ M pM bi IXYS C # e p a npM M eH eH M a: n p e o 6 p a 3 0 B a ie n M D C-DC, n po M biw ne rn-ib ie MMnynbCHbie 6jiokm nMTaHMfl, cucTeM bi
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ot-227bnpe06pa30baienmflmana30hot-55+11ixtn21n100ixfn27n80ixfn36n60ixfn48n50ixfn55n50ixfn130n30ixtn79n20ixfn120n20ixfn73n30ixfn106n20ixfn150n15
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16rfp15n05rfp50n05lrfd14n05lrfd14n05lsmrfd14n05smrfp14n05lirf540 complementaryirfz44n complementarystd2n52toshiba irfz44a datasheetstp2na60ssh6n80rfp60n06ste38na50irf630 complementaryirf3205 ir
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ixfh26n60q
Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY
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si4466dysi4966dysi9925dysi9942dy+162sk1388t0220abirf7319irf7413irf7455irl2203nixfh26n60q2sk23332sk2761irf1405buz345bss89irfp250np9nb60irfp260n2sk2671
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SSH6N80
Abstract: rfp60n06 IRF3205 IR BUK417-500AE SFP70N03 BUZ91A 2SK2717 STMicroelectronics BUZ22 IXFH13N50
Contextual Info: Sales type BUZ10 BUZ11 BUZ11A BUZ71 BUZ71A BUZ72A BUZ80A IRF520 IRF530 IRF540 IRF620 IRF630 IRF640 IRF730 IRF740 IRF820 IRF830 IRF840 IRFBC30 IRFBC40 IRFZ40 MTP3055E STB10NA40 STB10NB20 STB10NB50 STB11NB40 STB15N25 STB16NB25 STB18N20 STB19NB20 STB30N10 STB36NE03L
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buz10buz11buz11abuz71+16buz71abuz72abuz80airf520irf530irf540ssh6n80rfp60n06irf3205 irbuk417-500aesfp70n03buz91a2sk2717stmicroelectronicsbuz22ixfh13n50
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fqp60n06
Abstract: SSH6N80 spb32N03l SMP60N03-10L SSP80N06A IRF540 application rfp60n06 fsd9933a 2SK790 IRFZ30
Contextual Info: 电子元器件系列 wwww.rf-china.com RF-Micom co.,Ltd EMail:sales@rf-china.com Sale Phone:86-592-5713956 MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06ssh6n80spb32n03lsmp60n03-10lssp80n06airf540 applicationrfp60n06fsd9933a2sk790irfz30
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sot23 BS170
Abstract: 2SK2671 P3NB60 IXFN27N80 IRFL014N STP22NE10L irf6348 IRF7305 rfp40n IXTN21N100
Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su electronics Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET (copTMpoBKa no TOKy lD) Kofl: BS107 BSS123 BS170 BSS138 BS108 BSN304 BSS89 IRFD310 IRFD420 IRFD210 IRFD320 2N7002 IRFD220 IRFL210 IRFD110 IRLD110 IRFD120
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bs107bss123bs170bss138+16bs108bsn304bss89irfd310irfd420irfd210sot23 bs1702sk2671p3nb60ixfn27n80irfl014nstp22ne10lirf6348irf7305rfp40nixtn21n100
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IXGP70N33
Abstract: IXGQ90N33 SK0604 IXTP76N075 IXER35N120D1 IXGP70N33TBM-A DH60-18A VBO19 SK0712 IXTH1N250
Contextual Info: Efficiency Through Technology RELIABILITY REPORT 2008 Power Semiconductor Devices January 2006 - December 2007 IXYS Corporation 3540 Bassett Street Santa Clara CA 95054 USA Published February 2008 IXYS Semiconductor GmbH Edisonstrasse 15 D-68623 Lampertheim
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d-68623ixbod1-08ixbod1-09ixbod1-10+12dsep30-06brdsep30-12crixgp70n33ixgq90n33sk0604ixtp76n075ixer35n120d1ixgp70n33tbm-adh60-18avbo19sk0712ixth1n250
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