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    IRL2203N Search Results

    IRL2203N Datasheets (33)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IRL2203N
    International Rectifier 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRL2203N with Standard Packaging Original PDF 232.69KB 9
    IRL2203N
    International Rectifier HEXFET Power MOSFET Original PDF 144.41KB 8
    IRL2203N
    International Rectifier Power MOSFET Original PDF 228.49KB 8
    IRL2203N
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRL2203N
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Logic Level, 30V, 100A, Pkg Style TO-220AB Scan PDF 50.01KB 1
    IRL2203N
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 36.82KB 1
    IRL2203NL
    International Rectifier 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRL2203NL with Standard Packaging Original PDF 234.86KB 11
    IRL2203NL
    International Rectifier HEXFET Power Mosfet Original PDF 171.75KB 10
    IRL2203NL
    International Rectifier HEXFET Power MOSFET Original PDF 132.24KB 10
    IRL2203NL
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRL2203NL
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 36.82KB 1
    IRL2203NLPBF
    International Rectifier Original PDF 230.68KB 10
    IRL2203NLPBF
    International Rectifier 30V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRL2203NL with Lead Free Packaging Original PDF 234.86KB 11
    IRL2203NPBF
    International Rectifier 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to the IRL2203N with lead free packaging Original PDF 232.69KB 9
    IRL2203NPBF
    International Rectifier 30V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original PDF 228.49KB 8
    IRL2203NS
    International Rectifier Power MOSFET(Vdss=30V, Rds(on)=7.0mohm, Id=116A) Original PDF 132.23KB 10
    IRL2203NS
    International Rectifier 30V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRL2203NS with Standard Packaging Original PDF 234.86KB 11
    IRL2203NS
    International Rectifier N-Channel Enhancement MOSFET Original PDF 162.19KB 10
    IRL2203NS
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    IRL2203NS
    International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Rectifier Scan PDF 73.98KB 1
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    IRL2203N Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IRL2203NSTRLPBF

    Transistor: N-MOSFET; unipolar; 30V; 116A; 170W; D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME IRL2203NSTRLPBF 800
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    • 1000 $0.69
    • 10000 $0.69
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    RS IRL2203NSTRLPBF Bulk 800
    • 1 -
    • 10 -
    • 100 -
    • 1000 $3.54
    • 10000 $3.37
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    NexGen Digital IRL2203NSTRLPBF 10
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    Win Source Electronics IRL2203NSTRLPBF 1,890
    • 1 -
    • 10 $13.27
    • 100 $10.79
    • 1000 $10.79
    • 10000 $10.79
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    Infineon Technologies AG IRL2203NPBF

    Trans MOSFET N-CH Si 30V 116A 3-Pin(3+Tab) TO-220AB Tube
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical IRL2203NPBF 676,371 416
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    • 1000 $0.75
    • 10000 $0.67
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    RS IRL2203NPBF Bulk 1
    • 1 $1.43
    • 10 $1.26
    • 100 $1.26
    • 1000 $1.26
    • 10000 $1.26
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    Bristol Electronics IRL2203NPBF 1,000
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    Rochester Electronics IRL2203NPBF 676,371 1
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    • 100 $0.72
    • 1000 $0.60
    • 10000 $0.53
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    Win Source Electronics IRL2203NPBF 94,384
    • 1 -
    • 10 -
    • 100 $0.54
    • 1000 $0.36
    • 10000 $0.36
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    Infineon Technologies AG AUIRL2203N

    AUIRL2203N N-CHANNEL MOSFET TRANSISTOR, 75 A, 116 A, 30 V, 3-PIN TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS AUIRL2203N Bulk 25
    • 1 -
    • 10 -
    • 100 $8.54
    • 1000 $8.54
    • 10000 $8.54
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    Infineon Technologies AG IRL2203NSPBF

    MOSFET, POWER, N-CH, VDSS 30V, RDS(ON) 7 MILLIOHMS, ID 116A, D2PAK, PD 180W, VGS +/-16V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IRL2203NSPBF Bulk 550
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    • 1000 $5.01
    • 10000 $3.44
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    Win Source Electronics IRL2203NSPBF 1,840
    • 1 -
    • 10 $13.27
    • 100 $10.79
    • 1000 $10.79
    • 10000 $10.79
    Buy Now

    Infineon Technologies AG IRL2203NLPBF

    MOSFET, 30V, 116A, 7 MOHM, 40 NC QG, LOGIC LEVEL, TO-262
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    RS IRL2203NLPBF Bulk 400
    • 1 -
    • 10 -
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    • 1000 $2.00
    • 10000 $2.00
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    IRL2203N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    AN-994

    Abstract: IRL2203NL IRL2203NS
    Contextual Info: PD - 95219 IRL2203NSPbF IRL2203NLPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ


    Original
    irl2203nspbfirl2203nlpbfan-994irl2203nl+1irl2203ns PDF

    irl2203n

    Abstract: *L2203N
    Contextual Info: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    irl2203no-220l2203n PDF

    Contextual Info: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    irl2203no-220 PDF

    1RL2203

    Abstract: 1RL2203NL
    Contextual Info: PD - 9.1367C International IGR Rectifier IRL2203NS/L HEXFET Power M OSFET • Logic-Level Gate Drive • Advanced Process Technology • Surface Mount IRL2203NS • Low-profile through-hole (IRL2203NL) • 175°C Operating Temperature • Fast Switching


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    irl2203nsirl2203nl1367cirl2203ns/l+4c-488c-4891rl22031rl2203nl PDF

    LSE 405

    Abstract: marking F53 AN-994 IRL2203N IRL2203NL IRL2203NS
    Contextual Info: PD - 9.1367C IRL2203NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL2203NS l Low-profile through-hole (IRL2203NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 30V


    Original
    1367cirl2203ns/lirl2203nsirl2203nl+4lse 405marking f53an-994irl2203n PDF

    AN-994

    Abstract: IRF530S IRL2203NL IRL2203NS
    Contextual Info: PD - 94394A IRL2203NS IRL2203NL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡


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    4394airl2203nsirl2203nleia-418+2an-994irf530s PDF

    AN-994

    Abstract: IRF530S IRL2203N IRL2203NS
    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1367B IRL2203NS PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated


    Original
    1367birl2203nsan-994irf530s+1irl2203n PDF

    IRL2203N

    Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1366B IRL2203N PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l


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    1366birl2203n PDF

    IRL2203N

    Abstract: mosfet p 30v 60a
    Contextual Info: PD - 91366 IRL2203N HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description Advanced HEXFET® Power MOSFETs from International


    Original
    irl2203no-220o-220abmosfet p 30v 60a PDF

    IRL2203NL

    Abstract: AN-994 IRF530S IRL2203NS
    Contextual Info: PD - 94394 IRL2203NS IRL2203NL HEXFET Power MOSFET l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡ S Description


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    irl2203nsirl2203nleia-418an-994+1irf530s PDF

    RL2203

    Abstract: IRL2203NS m 60 n 03 g10
    Contextual Info: PD - 9.1367C International IQ R Rectifier IRL2203NS/L • Logic-Level Gate Drive HEXFET Power MOSFET • Advanced Process Technology • Surface Mount IRL2203NS • Low-profile through-hole (I RL2203NL) • 175°C Operating Temperature • Fast Switching


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    irl2203nsrl2203nlrl2203m 60 n 03 g10 PDF

    AN-994

    Abstract: IRF530S IRL2203NL IRL3103L
    Contextual Info: PD - 95219A l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested Lead-Free IRL2203NSPbF IRL2203NLPbF HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ


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    5219airl2203nspbfirl2203nlpbfeia-418+4an-994irf530sirl2203nlirl3103l PDF

    mosfet p 30v 60a

    Abstract: IRL2203NPBF
    Contextual Info: PD - 94953 IRL2203NPbF HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l D VDSS = 30V l RDS on = 7.0mΩ G ID = 116A‡


    Original
    irl2203npbfo-220mosfet p 30v 60a PDF

    IRFP150N equivalent

    Abstract: IRF3710 equivalent irf540 equivalent equivalent of irf640n irfp250n equivalent equivalent irf640n IRFP260N IRFP260n equivalent IRF3415 equivalent IRF540
    Contextual Info: VDS RDS ON ID Package Philips VDS RDS(ON) ID Rating RDS(ON) IRFR9N20D IRFS17N20D IRFS23N15D IRFS23N20D IRFS31N20D IRFS33N15D IRFS59N10D IRFZ24N IRFZ24S IRL1104S IRL2203NS IRL3103 IRL3103S IRL3215 IRL3705N IRL3803 IRL3803S IRLL014 IRLML2803 IRLR024N IRLZ24N


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    irfr9n20dirfs17n20dirfs23n15dirfs23n20d+16irfs31n20dirfs33n15dirfs59n10dirfz24nirfz24sirl1104sirfp150n equivalentirf3710 equivalentirf540 equivalentequivalent of irf640nirfp250n equivalentequivalent irf640nirfp260nirfp260n equivalentirf3415 equivalentirf540 PDF

    AN-994

    Abstract: IRF530S IRL2203NL IRL2203NS
    Contextual Info: PD - 94394A IRL2203NS IRL2203NL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡


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    4394airl2203nsirl2203nlpower26+3eia-418an-994irf530s PDF

    irl2203n

    Abstract: 24v 60a mosfet
    Contextual Info: PD - 9.1366C International XOR Rectifier IRL2203N HEXFET Power MOSFET • • • • • • Logic-Level Gate Drive Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated V dss = 30V FÌDS on = 0.0070


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    1366cirl2203no-220c-483+2c-48424v 60a mosfet PDF

    IRL2203N

    Contextual Info: 2002-03-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-177-57 IRL2203N HEXFET TO-220 PD - 9.1366C IRL2203N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology


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    irl2203no-2201366c PDF

    AN-994

    Abstract: IRL2203NL IRL2203NS
    Contextual Info: PD - 95219 IRL2203NSPbF IRL2203NLPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ


    Original
    irl2203nspbfirl2203nlpbfan-994irl2203nl+1irl2203ns PDF

    91367D

    Abstract: AN-994 IRL2203N IRL2203NL IRL2203NS
    Contextual Info: PD - 91367D IRL2203NS/L Logic-Level Gate Drive l Advanced Process Technology l Surface Mount IRL2203NS l Low-profile through-hole (IRL2203NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description HEXFET Power MOSFET l D VDSS = 30V


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    91367dirl2203ns/lirl2203nsirl2203nl+2an-994irl2203n PDF

    IRL2203N

    Contextual Info: PD - 9.1366C IRL2203N HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description l D l VDSS = 30V RDS on = 0.007Ω G ID = 116A… S Fifth Generation HEXFETs from International Rectifier


    Original
    1366cirl2203no-220 PDF

    1rf1010

    Contextual Info: PD - 9.1366B International E2R Rectifier IRL2203N PRELIMINARY HEXFET Power MOSFET • Logic-Level Gate Drive • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated Description


    OCR Scan
    1366birl2203n1rf1010 PDF

    ixfh26n60q

    Abstract: 2SK2333 2SK2761 IRF1405 BUZ345 BSS89 irfp250n P9NB60 irfp260n 2sk2671
    Contextual Info: MHTEPTEKC ww w.i-t.su ¡nfo@ i-t.su Ten: 495 739-09-95, 644-41-29 TpaH3MCTopbi N-MOSFET copTMpoBKa no HanpflweHMro UDS Kofl: SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319 IRF7413 IRF7455 IRL2203N IRL3103 IRL3713 IRL3803 IRL3803S IRLL2703 SI4404DY SI4412ADY


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    si4466dysi4966dysi9925dysi9942dy+162sk1388t0220abirf7319irf7413irf7455irl2203nixfh26n60q2sk23332sk2761irf1405buz345bss89irfp250np9nb60irfp260n2sk2671 PDF

    Contextual Info: PD - 95219A IRL2203NSPbF IRL2203NLPbF l l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested Lead-Free HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ


    Original
    5219airl2203nspbfirl2203nlpbfeia-418 PDF

    Contextual Info: PD - 94394A IRL2203NS IRL2203NL l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated 100% RG Tested HEXFET Power MOSFET D VDSS = 30V RDS on = 7.0mΩ G ID = 116A‡


    Original
    4394airl2203nsirl2203nleia-418 PDF