75N1 Search Results

75N1 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
LM2675N-12/NOPB		Texas Instruments	SIMPLE SWITCHER® 6.5V to 40V, 1A Low Component Count Step-Down Regulator 8-PDIP -40 to 125

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ams OSRAM Group LP-T675-N1Q1-25-0-30-R18-Z LED GREEN CLEAR 2PLCC SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	LP-T675-N1Q1-25-0-30-R18-Z	Cut Tape	7,872		1	1 $0.37 10 $0.25 100 $0.18 1000 $0.13 10000 $0.13	Buy Now
	LP-T675-N1Q1-25-0-30-R18-Z	Digi-Reel	7,872		1	1 $0.37 10 $0.25 100 $0.18 1000 $0.13 10000 $0.13	Buy Now
	LP-T675-N1Q1-25-0-30-R18-Z	Reel	6,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.11	Buy Now
Pulse Electronics Corporation BWCM001207075N1H00 INDUCTOR RF
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DigiKey ()	BWCM001207075N1H00	Digi-Reel	3,879		1	1 $0.13 10 $0.11 100 $0.09 1000 $0.07 10000 $0.07	Buy Now
	BWCM001207075N1H00	Cut Tape	3,879		1	1 $0.13 10 $0.11 100 $0.09 1000 $0.07 10000 $0.07	Buy Now
Sager	BWCM001207075N1H00				28,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
IXYS Corporation IXTA75N10P MOSFET N-CH 100V 75A TO263
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DigiKey	IXTA75N10P	Tube	844		1	1 $5.41 10 $5.41 100 $2.86 1000 $2.31 10000 $2.31	Buy Now
TTI	IXTA75N10P	Tube			300	1 - 10 - 100 - 1000 $2.28 10000 $2.28	Buy Now
Infineon Technologies AG IPI075N15N3GXKSA1 MOSFET N-CH 150V 100A TO262-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IPI075N15N3GXKSA1	Tube	539		1	1 $5.95 10 $5.95 100 $2.82 1000 $2.59 10000 $2.59	Buy Now
TME	IPI075N15N3GXKSA1				1	1 $5.87 10 $5.36 100 $2.78 1000 $2.78 10000 $2.78	Get Quote
Chip Stock	IPI075N15N3GXKSA1		7,500			1 - 10 - 100 - 1000 - 10000 -	Get Quote
EBV Elektronik	IPI075N15N3GXKSA1			17 Weeks	500	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Win Source Electronics	IPI075N15N3GXKSA1		6,000			1 - 10 - 100 $3.68 1000 $3.30 10000 $3.30	Buy Now
Delta Electronics Inc HCB1075N-181 IND SMD 175NH ASSEMBLY CHOKE
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DigiKey ()	HCB1075N-181	Cut Tape	500		1	1 $2.17 10 $1.78 100 $1.47 1000 $1.47 10000 $1.47	Buy Now
	HCB1075N-181	Digi-Reel	500		1	1 $2.17 10 $1.78 100 $1.47 1000 $1.47 10000 $1.47	Buy Now

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75N1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: HiPerFETTM Power MOSFETs IXFH 75N10Q IXFT 75N10Q VDSS ID25 = 100 V = 75 A = 20 mW RDS on Q-Class trr £ 200ns N-Channel Enhancement Mode Avalanche Rated, High dv/dt Low Gate Charge and Capacitances Preliminary data Symbol Test Conditions Maximum Ratings VDSS	Original	75N10Q 75N10Q 200ns O-247 O-268 O-268AA	PDF
Contextual Info: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20	Original	75N15 O-247 405B2	PDF
Contextual Info: HiPerFETTM Power MOSFETs VDSS IXFH/IXFM 67 N10 IXFH/IXFM 75 N10 100 V 100 V Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MW 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C 67N10 75N10	Original	67N10 75N10 75N10 O-247 O-204 100ms	PDF
diode lt 247 Contextual Info: DIXYS HiPerFET Power MOSFETs IXFH 67N10 IXFH 75N10 VDSS ^D25 100 V 100 V 67 A 75 A V DSS Test Conditions ^ Maximum Ratings =25°C to150°C 100 V v DGR T j = 2 5 °C to 1 5 0 °C ; RGS=1 M£2 100 V Vos Continuous i2 0 V VGSM Transient d30 V ^ D25 Tc =25°C	OCR Scan	67N10 75N10 O-247 to150 diode lt 247	PDF
ixys ixdn 75 n 120 Abstract: 75N120 IXDN75N120 160mJ Contextual Info: IXDN 75N120 High Voltage IGBT VCES = 1200 V = 150 A IC25 VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Maximum Ratings E = Emitter ①, G = Gate, Symbol Conditions VCES TJ = 25°C to 150°C 1200	Original	75N120 OT-227 E153432 IXDN75N120 ixys ixdn 75 n 120 75N120 IXDN75N120 160mJ	PDF
DSA003697 Contextual Info: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ 100 V 100 V TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	67N10 75N10 75N10 O-247 O-204 O-268 DSA003697	PDF
75N120A Abstract: 75N120 IXDN75N120A 1TM4 MI1200 15i2 0504N Contextual Info: □ IXYS IXDN 75N120A High Voltage IGBT V CES 1200 V ^C25 120 A V CE sat typ 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions V CES ^ = 25°C to 150°C 1200 V V CGR ^ = 25°C to 150°C; RGE = 1 M£i 1200 V V GES Continuous	OCR Scan	75N120A OT-227 75N120 IXDN75N120A 1TM4 MI1200 15i2 0504N	PDF
IXTH75N15 Abstract: 75N15 Contextual Info: IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS VGSM Continuous Transient ±20	Original	75N15 O-247 405B2 IXTH75N15 75N15	PDF
Contextual Info: PolarHTTM Power MOSFET IXTA 75N10P IXTP 75N10P IXTQ 75N10P = = ≤ VDSS ID25 RDS on 100 V 75 A Ω 25 mΩ N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ	Original	75N10P O-263 O-220 75N10P	PDF
75N120 Contextual Info: IXDN 75N120 High Voltage IGBT VCES = 1200 V IC25 = 150 A VCE sat typ = 2.2 V Short Circuit SOA Capability Square RBSOA C miniBLOC, SOT-227 B E153432 E G G E E E C Symbol Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1200 V VCGR TJ = 25°C to 150°C; RGE = 20 kW	Original	75N120 OT-227 E153432 IXDN75N120 75N120	PDF
Contextual Info: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 100 V 100 V RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	67N10 75N10 O-247 O-268 O-204	PDF
Contextual Info: ADVANCE TECHNICAL INFORMATION IXTC 75N10 MegaMOSTMFET N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 TC = 25°C	Original	75N10 ISOPLUS220TM 728B1 123B1 728B1 065B1	PDF
75N120 Abstract: 0504N IXDN75N120A Contextual Info: □IXYS IXDN 75N120A High Voltage IGBT V CES ^C25 V CE sat typ 1200 V 120 A 2.5 V Short Circuit SOA Capability Preliminary Data Maximum Ratings Symbol Test Conditions VCES Tj = 25°C to 150°C 1200 V VCGR Tj = 25°C to 150°C; RGE = 1 M il 1200 V mini BLOC, SOT-227 B	OCR Scan	75N120A OT-227 75N120 0504N IXDN75N120A	PDF
75N1 Abstract: 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 42N20 ixtn 44N50 KS 4400 204 3B Contextual Info: HiPerF ET Power MOSFETs ?D g UE D f N-Channel Enhancement-Mode with Fast Intrinsic Diode Type V DSS max. ► New ► IXFH 76N07-11 ► IXFH 76N07-12 IXFH IXFH IXFH IXFH IXFH 67N10 75N10 42N20 50N20 58N20 V 70 100 200 IXFH 35N30 IXFH 40N30 300 IXFH IXFH	OCR Scan	76N07-11 76N07-12 67N10 75N10 42N20 50N20 58N20 O-247 O-204 75N1 6n80 IXTM20N60 IRFP 260 M ixfh K 15N60 ixtn 44N50 KS 4400 204 3B	PDF

67N10 Abstract: 75N10 123B16 Contextual Info: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 IXTT 75N10 N-Channel Enhancement Mode ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ 100 V 100 V TO-247 AD (IXTH) Symbol Test Conditions VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	67N10 75N10 O-247 O-268 O-204 67N10 75N10 123B16	PDF
75n15 Contextual Info: Advance Technical Information IXTH 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ 150 150 V V VGS	Original	75N15 75N15 O-247 O-268 O-268 728B1	PDF
Contextual Info: □IXYS IXFH 67N10 IXFH 75N10 IXFH/FM 67N10 IXFH/FM 75N10 HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family IXFM 67N10 IXFM 75N10 D VDSS ^D25 100 V 100V 67 A 75 A I DS on 25 mQ 200 ns 20 mfì 200 ns OD I G os Symbol	OCR Scan	67N10 75N10	PDF
98938 Contextual Info: Advance Technical Information IXBN 75N170A VCES IC25 VCE sat tfi BIMOSFETTM Monolithic Bipolar MOS Transistor Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 1700 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ 1700 V VGES Continuous ±20 V VGEM	Original	75N170A OT-227 E153432 728B1 98938	PDF
IXTN 36N50 C Abstract: ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50 Contextual Info: n ix Y S Standard UOSFET T-Series \ Contents v DSS max ^D^cont C= 25 °C TO-247 □ DS on) Tc = 25 °C TO-220 (IXTP) TO-263 (IXTA) TO-264 miniBLOC (DON) Page ♦ V A £i 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 C2-4 200 30 0.085 IRFP 250 C2-8 50 0.045 IXTH 50N20	OCR Scan	O-247 O-220 O-263 O-264 67N10 75N10 50N20 79N20 35N30 40N30 IXTN 36N50 C ixys ixth 21N50 mosfet irfp 250 N c226 C278 C2100 13N110 C258 IRFP ixys ixtn 36n50	PDF
IXTH75N10 Abstract: 75N10 Contextual Info: MegaMOSTMFET VDSS IXTH / IXTM 67N10 IXTH / IXTM 75N10 100 V 100 V ID25 RDS on 67 A 25 mΩ Ω Ω 75 A 20 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 100 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 100 V	Original	67N10 75N10 O-247 O-204 IXTH75N10 75N10	PDF
transistor ixfh application note Abstract: 75N10 mosfet "AC Motor" 6206 A BY 268 V 75N10 D-68623 Contextual Info: IXFH 67N10 IXFH 75N10 IXFM 67N10 IXFM 75N10 VDSS ID25 RDS on trr IXFH/FM 67N10 100 V 67 A 25 mΩ 200 ns IXFH/FM 75N10 100 V 75 A 20 mΩ 200 ns TM HiPerFET Power MOSFET N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Symbol Test Conditions	Original	67N10 75N10 67N10 75N10 transistor ixfh application note 75N10 mosfet "AC Motor" 6206 A BY 268 V D-68623	PDF
Contextual Info: !3 IX ^ Y "S Advanced Technical Information VDSS IXFH 75N10Q IXFT 75N10Q HiPerFET Power MOSFETs Q-Class = 100 V = 75 A = 20 mQ ^D25 D DS on trr < 200ns N-Channel Enhancement Mode Avalanche Rated, Highdv/dt Low Gate Charge and Capacitances Symbol TestConditions	OCR Scan	75N10Q 200ns -247A	PDF
75n120 Contextual Info: □ IX Y S High Voltage IGBT IXDN 75N120 1200 V 150 A 2.2 V V CES v I C25 CE sat typ Short Circuit S O A Capability Square R B SO A miniBLOC, SOT-227 B TO Preliminary Data E153432 E Symbol Conditions VcES Tj = 25°C to 150°C 1200 V VcCR Tj = 25°C to 150°C; Rge = 20 kQ	OCR Scan	75N120 OT-227 E153432 D-68623 75n120	PDF
75n15 Abstract: .75N15 IXTH75N15 MOSFET 450 Contextual Info: IXTH 75N15 IXTQ 75N15 IXTT 75N15 High Current Power MOSFET VDSS ID25 = 150 V = 75 A Ω = 23 mΩ RDS on N-Channel Enhancement Mode Preliminary Data Sheet TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ	Original	75N15 O-247 728B1 123B1 728B1 065B1 75n15 .75N15 IXTH75N15 MOSFET 450	PDF

75N1 Search Results

75N1 Result Highlights (1)

75N1 Price and Stock

ams OSRAM Group LP-T675-N1Q1-25-0-30-R18-Z

Pulse Electronics Corporation BWCM001207075N1H00

IXYS Corporation IXTA75N10P

Infineon Technologies AG IPI075N15N3GXKSA1

Delta Electronics Inc HCB1075N-181

75N1 Datasheets Context Search

diode lt 247

ixys ixdn 75 n 120

DSA003697

75N120A

IXTH75N15

75N120

75N120

75N1

67N10

75n15

98938

IXTN 36N50 C

IXTH75N10

transistor ixfh application note

75n120

75n15