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    30N20 Search Results

    30N20 Datasheets (1)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    30N20
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.6KB 1
    SF Impression Pixel

    30N20 Price and Stock

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    Glenair Inc 440LS030N2008-3

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    Interstate Connecting Components 440LS030N2008-3
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    SiTime Corporation SIT9365AI-1B2-30N200.000000Y

    Standard Frequency Ultra-low Jitter Differential Oscillator 200MHz 3V 25ppm 6-Pin Surface Mount T/R - Tape and Reel (Alt: SIT9365AI-1B2-30N200.000000Y)
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    SiTime Corporation SIT9365AI-4E3-30N200.000000T

    Standard Frequency Ultra-low Jitter Differential Oscillator 200MHz 3V 50ppm 6-Pin Surface Mount T/R - Tape and Reel (Alt: SIT9365AI-4E3-30N200.000000T)
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    SiTime Corporation SIT1602BC-13-30N-20.000000D

    Silicon Oscillator 20MHz 3V 15pF 4-Pin QFN T/R - Tape and Reel (Alt: SIT1602BC-13-30N-20.000000D)
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    Avnet Americas SIT1602BC-13-30N-20.000000D Tape & Reel 18 Weeks 3,000
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    SiTime Corporation SIT1602BC-23-30N-20.000000E

    Silicon Oscillator 20MHz 3V 15pF 4-Pin QFN T/R - Tape and Reel (Alt: SIT1602BC-23-30N-20.000000E)
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    30N20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N20 Preliminary Power MOSFET 30A, 200V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can


    Original
    30n2030n20l-tf2-t30n20g-tf2-to-220f2+1qw-r502-823 PDF

    30N20G

    Abstract: 30n20 30N2 AN569 NTP30N20 NTP30N20G
    Contextual Info: 30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


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    ntp30n20o-220tpv10ntp30n20/d+530n20g30n2030n2an569ntp30n20g PDF

    RAS 0510 SUN HOLD

    Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
    Contextual Info: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.


    Original
    mid-1990sras 0510 sun holdrelay ras 1210sun hold ras 0510+7relay ras 0510ras 0510sun hold ras 0910sun hold ras 0610erf 2030ras 0610 relay45n03 PDF

    SMD diode N20

    Abstract: IXFH58N20 30n20
    Contextual Info: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2


    OCR Scan
    ixfh58n2050n2042n2058n20+4o-247h42n20smd diode n2030n20 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan
    vp1204ntp8p085001dvp1206n+141208n5002d1209nvp1209nirfd1z3 equivalent8n60 equivalenttp8n20tp8n10siemens semiconductor manualwhat is comparable with irf 32052n6823irf8408mtm5n90 designers datasheetsmps cook circuit PDF

    Contextual Info: 30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


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    ntp30n20ntp30n20/d PDF

    Contextual Info: 30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • VDSS Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original
    ntb30n20ntb30n20/d PDF

    30N20G

    Abstract: 30n20 ntb30n20t4g 30N2 NTB30N20T4 418B-04 AN569 NTB30N20 NTB30N20G
    Contextual Info: 30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • VDSS Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original
    ntb30n20ntb30n20/d30n20g30n20+6ntb30n20t4g30n2ntb30n20t4418b-04an569ntb30n20g PDF