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    30N20 Search Results

    30N20 Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    30N20
    		Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.6KB 1
    SF Impression Pixel

    30N20 Price and Stock

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    Infineon Technologies AG ISC130N20NM6ATMA1

    MOSFET
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    DigiKey () ISC130N20NM6ATMA1 Digi-Reel 1,531 1
    • 1 $4.84
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    • 100 $3.07
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    ISC130N20NM6ATMA1 Cut Tape 1,531 1
    • 1 $4.84
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    Mouser Electronics ISC130N20NM6ATMA1 4,199
    • 1 $4.75
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    • 10000 $2.56
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    TME ISC130N20NM6ATMA1 5,000
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    EBV Elektronik ISC130N20NM6ATMA1 53 Weeks 5,000
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    IXYS Corporation IXFX230N20T

    MOSFET N-CH 200V 230A PLUS247-3
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    DigiKey IXFX230N20T Tube 513 1
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    Mouser Electronics IXFX230N20T 282
    • 1 $24.84
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    TTI IXFX230N20T Tube 90 30
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    New Advantage Corporation IXFX230N20T 118 1
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    Infineon Technologies AG IPP130N20NM6AKSA1

    IPP130N20NM6AKSA1
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    DigiKey IPP130N20NM6AKSA1 Tube 360 1
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    Mouser Electronics IPP130N20NM6AKSA1 343
    • 1 $3.93
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    Newark IPP130N20NM6AKSA1 Bulk 454 1
    • 1 $3.95
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    EBV Elektronik IPP130N20NM6AKSA1 19 Weeks 500
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    Goford Semiconductor GT130N20M

    MOSFET N-CH 200V 90A 250W TO-263
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    DigiKey () GT130N20M Digi-Reel 100 1
    • 1 $3.93
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    • 100 $1.81
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    GT130N20M Cut Tape 100 1
    • 1 $3.93
    • 10 $2.58
    • 100 $1.81
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    IXYS Corporation IXTH130N20T

    MOSFET N-CH 200V 130A TO247
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    DigiKey IXTH130N20T Tube 16 1
    • 1 $9.46
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    • 100 $6.01
    • 1000 $4.69
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    Mouser Electronics IXTH130N20T 440
    • 1 $9.27
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    TTI IXTH130N20T Tube 300
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    TME IXTH130N20T 1
    • 1 $8.97
    • 10 $7.38
    • 100 $5.97
    • 1000 $5.76
    • 10000 $5.76
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    New Advantage Corporation IXTH130N20T 618 1
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    • 100 $14.89
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    30N20 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N20 Preliminary Power MOSFET 30A, 200V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can


    Original     		30N20 30N20 30N20L-TF2-T 30N20G-TF2-T O-220F2 QW-R502-823 PDF

    30N20G

    Abstract: 30n20 30N2 AN569 NTP30N20 NTP30N20G
    Contextual Info: 30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTP30N20 O-220 tpv10 NTP30N20/D 30N20G 30n20 30N2 AN569 NTP30N20 NTP30N20G PDF

    RAS 0510 SUN HOLD

    Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
    Contextual Info: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.


    Original     		mid-1990s RAS 0510 SUN HOLD relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03 PDF

    SMD diode N20

    Abstract: IXFH58N20 30n20
    Contextual Info: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2


    OCR Scan     		IXFH58N20 50N20 42N20 58N20 58N20 O-247 H42N20 SMD diode N20 30n20 PDF

    IRFD1Z3 equivalent

    Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
    Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not


    OCR Scan     		VP1204N TP8P08 5001D VP1206N 1208N 5002D 1209N VP1209N IRFD1Z3 equivalent 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit PDF

    Contextual Info: 30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTP30N20 NTP30N20/D PDF

    Contextual Info: 30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • VDSS Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTB30N20 NTB30N20/D PDF

    30N20G

    Abstract: 30n20 ntb30n20t4g 30N2 NTB30N20T4 418B-04 AN569 NTB30N20 NTB30N20G
    Contextual Info: 30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • VDSS Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature


    Original     		NTB30N20 NTB30N20/D 30N20G 30n20 ntb30n20t4g 30N2 NTB30N20T4 418B-04 AN569 NTB30N20 NTB30N20G PDF