30N2 Search Results

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N20 Preliminary Power MOSFET 30A, 200V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can

IXTH30N25

Abstract: 30N25
Contextual Info: Advance Technical Information Standard Power MOSFET VDSS = 250 V ID cont = 30 A Ω RDS(on) = 75 mΩ IXTH 30N25 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 250

30N25

Contextual Info: Advance Technical Information Standard Power MOSFETs ISOPLUS247TM IXTR 30N25 Electrically Isolated Backside VDSS = 250 V ID (cont) = 25 A Ω RDS(on) = 75 mΩ N-Channel Enhancement Mode Avalanche Rated, High dv/dt Maximum Ratings ISOPLUS 247TM E153432 Symbol

30N20G

Abstract: 30n20 30N2 AN569 NTP30N20 NTP30N20G
Contextual Info: 30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

RAS 0510 SUN HOLD

Abstract: relay ras 1210 sun hold RAS 0510 relay RAS 0510 RAS 0510 SUN HOLD ras 0910 sun hold RAS 0610 ERF 2030 ras 0610 relay 45n03
Contextual Info: Compiled by Herman Boel & James Niven EMWG homepage: www.emwg.info 1998-2005 Preface & Copyright Welcome to the Euro-African Medium Wave Guide What lies in front of you or what you see on your computer screen is the result of a lot of hard work and love.

HD46505

Abstract: VOGT 406 69 hd46821 vogt transformer 406 69 vogt transformer 406 77 HD46850 hd46505s vogt transformer 406 06 020 HD63484 HD468B21
Contextual Info: • ■ ■ fmSÊM i b b h h h i 8/16-BIT PERIPHERAL LSI DATA BOOK H IT A C H I MEDICAL APPLICATIONS H itachi’s products are not authorized for use in M E D IC A L A P P L IC A ­ T IO N S , including, but not lim ited to, use in life support devices without the

Motoren und Antriebssysteme

Abstract: motors M3G084
Contextual Info: Antriebstechnik_2011_01_18_Finale_DE_:Vorlage 18.01.2011 16:42 Seite 1 Antriebstechnik für Gleich- und Wechselspannung Die Wahl der Ingenieure Ausgabe 2011 Antriebstechnik_2011_01_18_Finale_DE_:Vorlage 18.01.2011 16:42 Seite 2 Innovationen für die Zukunft

submersible motor winding formula

Abstract: dc motor for 24v braun
Contextual Info: Antriebstechnik_2011_05_27_Finale_EN_:Vorlage 31.05.2011 15:43 Seite 1 Drive technology for AC and DC The engineer’s choice version 2011 Antriebstechnik_2011_05_27_Finale_EN_:Vorlage 31.05.2011 15:43 Seite 2 Innovations for the future The right product for every requirement

VDC-3-54.32 B00

Contextual Info: 27.05.2011 10:11 Seite 13 Information Antriebstechnik_2011_05_27_Finale_EN_:Vorlage VarioDrive C ECI motor BG motor BCI motor 15 AC motors VARIODRIVE 3-phase external rotor motor Specifications 14 13 Representatives VARIODRIVE technical information VARIODRIVE Compact

SMD diode N20

Abstract: IXFH58N20 30n20
Contextual Info: Hi DIXYS V DSS HiPerFET Power MOSFETs IXFH/IXFM 42 N20 IXFH/IXFM 50 N20 IXFH58N20 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOS™ Family Maximum Ratings Test Conditions V DSS T , - 25°C to 150°C 200 V Voa„ T , = 25°C to 150°C; RGS = 1 MS2

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

motors

Abstract: 34310
Contextual Info: 18.01.2011 16:43 Seite 13 Informationen Antriebstechnik_2011_01_18_Finale_DE_:Vorlage VarioDrive C ECI-Motor BG-Motor BCI-Motor 15 AC-Motoren VARIODRIVE 3-phasige Außenläufer Beschreibung 14 13 Vertretungen VARIODRIVE Technik VARIODRIVE Compact VARIODRIVE

Contextual Info: 30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature

Contextual Info: 30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • VDSS Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature