30N20G Search Results
30N20G Price and Stock
onsemi NTP30N20GPower Field-Effect Transistor, 30A I(D), 200V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTP30N20G | 12,869 |
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Get Quote | |||||||
onsemi NTB30N20GPower Field-Effect Transistor, 30A I(D), 200V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTB30N20G | 6,132 |
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Get Quote | |||||||
30N20G Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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30N20G
Abstract: 30n20 30N2 AN569 NTP30N20 NTP30N20G
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ntp30n20o-220tpv10ntp30n20/d+5 | |
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Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 30N20 Preliminary Power MOSFET 30A, 200V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 30N20 is an N-channel mode Power FET, it uses UTC’s advanced technology. This technology allows a minimum on-state resistance, superior switching performance. It also can |
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30n2030n20l-tf2-t30n20g-tf2-to-220f2+1 | |
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Contextual Info: NTP30N20 Preferred Device Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode TO−220 http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature |
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ntp30n20ntp30n20/d | |
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Contextual Info: NTB30N20 Power MOSFET 30 Amps, 200 Volts N−Channel Enhancement−Mode D2PAK http://onsemi.com Features • Source−to−Drain Diode Recovery Time Comparable to a Discrete • • • • VDSS Fast Recovery Diode Avalanche Energy Specified IDSS and RDS on Specified at Elevated Temperature |
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ntb30n20ntb30n20/d | |
30N20G
Abstract: 30n20 ntb30n20t4g 30N2 NTB30N20T4 418B-04 AN569 NTB30N20 NTB30N20G
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ntb30n20ntb30n20/d30n20g30n20+6 |