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NIC Components Corp NCB0201N800TR020F Ferrite Chip Bead 80Ohm 200mA 0.6Ohm 2-Pin 0201 T/R - Tape and Reel (Alt: NCB0201N800TR020F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NCB0201N800TR020F	Tape & Reel			15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
NIC Components Corp NCB0201N800TR050F - Tape and Reel (Alt: NCB0201N800TR050F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	NCB0201N800TR050F	Tape & Reel		18 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Infineon Technologies AG T1901N80TOHXPSA1 - Trays (Alt: T1901N80TOHXPSA1)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	T1901N80TOHXPSA1	Tray		60 Weeks	1	1 $3568.56 10 $3514.49 100 $3496.47 1000 $3496.47 10000 $3496.47	Buy Now
EBV Elektronik	T1901N80TOHXPSA1			53 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vyrian	T1901N80TOHXPSA1		6,237			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Bourns Inc PF-01N80E450B2 - Trays (Alt: PF-01N80E450B2)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	PF-01N80E450B2	Tray			64	1 - 10 - 100 $246.40 1000 $217.60 10000 $213.60	Buy Now
Newark	PF-01N80E450B2	Bulk			1	1 $353.25 10 $322.59 100 $322.59 1000 $322.59 10000 $322.59	Buy Now
Master Electronics	PF-01N80E450B2					1 - 10 - 100 $202.79 1000 $202.79 10000 $202.79	Buy Now
Vishay Intertechnologies NTHS1206N01N8002JE Nths-1206N01 80K 5% E58 E3; \|Vishay NTHS1206N01N8002JE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Newark	NTHS1206N01N8002JE	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $4.54	Buy Now

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01N80 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
521 MOSFET Abstract: 01N100 237 521 02 Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800 V VGS Continuous ±20	Original	01n80 100ma 01n100 o-251 +4o-252 728b1 521 mosfet 237 521 02	PDF
Contextual Info: aixYS H igh V o lta g e M O SFET IX TU 01 N 80 v D3S IX TU 01 N 100 lD25 =800/1000 V = 100 mA ^ D S o n = 80 f ì N-Channel, Enhancement Mode Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS Tj = 25°C to 150°C 800 1000 V VpOR	OCR Scan	01n80 01n100 o-251	PDF
Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Symbol Test Conditions VDSS TJ = 25°C to 150°C VDGR TJ = 25°C to 150°C; R VGS Maximum Ratings 01N100 800 = 1 MΩ V 800 V Continuous ±20 V	Original	01n80 100ma 01n100 o-251 +1728b1	PDF
Contextual Info: □ IXYS High Voltage MOSFET N-Channel, Enhancement Mode V DSS D DS on ^D25 80 0 V 100 m A 80 Q 1000 V 100 m A 80 Q IX T U 0 1 N 80 IX T U 0 1 N 100 Preliminary data Maximum Ratings 01N80 01N100 Symbol Test Conditions V DSS Td = 25°C to 150°C 800 1000 V	OCR Scan	01n80 01n100 o-251	PDF
01N80 Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode VDSS IXTU 01N80 IXTU 01N100 ID25 RDS on 800 V 100 mA 80 W 1000 V 100 mA 80 W Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 VDSS TJ = 25°C to 150°C 800 1000 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ	Original	01n80 01n100 o-251 hdm235	PDF
Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode V DSS IX T U 0 1 N 8 0 tXTU 0 1 N 10 0 p ^D25 DS on a 800 V 100 m A 80 1000 V 100 m A 80 Q Preliminary data Symbol Test Conditions Maximum Ratings 01N80 01N100 v*D S S ^ = 25°G to 150°C 800 1000 V V« ^ 800	OCR Scan	01n80 01n100 o-251	PDF
01N80 Abstract: 01N100 TO252 rthjc TO-251 Outline Contextual Info: High Voltage MOSFET N-Channel, Enhancement Mode IXTU 01N80 IXTY 01N80 VDSS ID25 = 800 V = 100mA = 50 Ω RDS on Preliminary data sheet Symbol Test Conditions Maximum Ratings 01N100 VDSS TJ = 25°C to 150°C 800 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 800	Original	01n80 100ma 01n100 o-251 +3o-252 to252 rthjc to-251 outline	PDF
40n80 Abstract: 13NB0 60N60 dsei 20-12 33N120 VUO 35-12 N 0 7 DS117-12A DS117-12 26n60 4410PI Contextual Info: Alphanumerical Index c CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 io8 23-08 ¡02 23-12 ¡02 23-16 ¡02 300-12 io3 300-16 io3 35-08 ¡04 35-12 ¡04 35-14 ¡04 72-12 ¡08 72-16 ¡08 8-08 ¡02 8-12 ¡02 18 18 18 18 18 18 18 18 18 18 18 18 18	OCR Scan	5-10a 52-14n01 52-16n01 55-12n +1655-14n07 55-18n 60-08n 60-16n 62-08n 62-12n 40n80 13nb0 60n60 dsei 20-12 33n120 vuo 35-12 n 0 7 ds117-12a ds117-12 26n60 4410pi	PDF
IRFP 260 M Abstract: 5n100 6n80 42n20 12N50A IRFP IXTN 36N50 C 67N10 irfp 240 Contextual Info: Standard Power MOSFETs and MegaMOS FETs N-Channel Enhancement-Mode Tjh = ► New IXTH IXTH IRFP IXTH IXTH IRFP IXTH IXTH IXTH IRFP IXTH IRFP IXTH ► IXTH IXTH IXTH ► IXTH ► IXTU ►IXTU IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH IXTH	OCR Scan	67n10 75n10 42n20 50n20 +1235n30 40n30 12n50a 21n50 24n50 30n50 irfp 260 m 5n100 6n80 irfp ixtn 36n50 c irfp 240	PDF
11n80 Abstract: ixys ixth 21N50 C2100 G264 2N100 ixth75n10 74N20 C2104 C294 13n80 Contextual Info: Contents D V OSS max Tc = 2 5 “C Tc = 2 5 °C V A Q 100 67 75 0.025 0.02 IXTH 67N10 IXTH 75N10 200 30 0.085 IRFP 250 42 50 0.06 0.045 IXTH 42N20 IXTH 50N20 74 0.035 IXTH 68N20 85 0.025 23 0.14 IRFP 254 C2-20 38 0.075 IRFP 264 C2-22 35 40 0.1 0.085 0.088	OCR Scan	o-247 o-251 o-204 o-264 +1615n60 20n60 15n70 01n80 35n30 40n30 11n80 ixys ixth 21n50 c2100 g264 2n100 ixth75n10 74n20 c2104 c294 13n80	PDF
DSE 130 -06A Abstract: vub 70-12 IXGH 30n120 vub 70-16 30N60B 80N10 12N60CD DSEI 30-16 AS DSEP 15-06A 13N50 Contextual Info: Alphanumerical Index A AXC-051 AXC-051-R AXC-102 AXV-002 48 48 48 49 C CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS CS 142-12 ¡08 142-16 ¡08 19-08 h oi 19-08 h o lS 19-12 h o i 19-12 h o lS 20*12 io1 20-14 ¡01 20-16 ¡01	OCR Scan	axc-051 axc-051-r axc-102 axv-002 +16015-14to1 2x45-16io1 2x60-08io1 2x60-12io1 2x60-14io1 2x60-16io1 dse 130 -06a vub 70-12 ixgh 30n120 vub 70-16 30n60b 80n10 12n60cd dsei 30-16 as dsep 15-06a 13n50	PDF