shd22512
Contextual Info: SENSITRON SEMICONDUCTOR SHD225505 TECHNICAL DATA DATA SHEET 359, REV. A Formerly Part Number - SHD22512 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS
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IRFC450
Abstract: SHD225505 SHD2251
Contextual Info: SENSITRON SEMICONDUCTOR SHD225505 TECHNICAL DATA DATA SHEET 359, REV. A Formerly Part Number - SHD22512 HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS
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shd225505shd22512o-254irfc450+3250ma10vdcshd2251
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ic 4043
Abstract: IRFC450 SHD225505B
Contextual Info: SENSITRON SEMICONDUCTOR SHD225505B TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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shd225505bo-254irfc450250ma+210vdcic 4043
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shd225505b
Contextual Info: SENSITRON SEMICONDUCTOR SHD225505B TECHNICAL DATA DATA SHEET 4043, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE. Electrically Equivalent to IRFC450 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED.
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IRFC9130
Abstract: SNF80504 IRFC360 IRFC250 SPF8
Contextual Info: I to MOSFETS HI Ik A o s DUAL N CHANNEL PO W ER M O SFETS PACKAGE 6 PIN SIP TO-61 ISOLATED RDS(ON *D DEVICE bvdss @ 0 .5 ' d CONTINUOUS Pd TYPE VOLTS OHMS OHMS WATTS CHIP SND600 600 0.6 IXTD15N60 SND500 500 0.4 11.0 14.0 125 125 IRFC450 SND460 600 20.0 125
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snd600snd500snd460snd410+11snd400snd310snd300snd200snd100ixtd15n60irfc9130snf80504irfc360irfc250spf8
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IXTH15N45A
Contextual Info: 4686226 I X Y S 03 CORP d F | 4 1. f l t=,2 2 1> D D O O E I S 2 |~~ / 3 / " □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V
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irfc4502n67692n6770irf450/irfp450+7irf451/irfp451irf452/irfp4521rf453/irfp453ixth15n50a/ixtm15n50aixth15n45a/ixtm15n45a12n50a/ixtm12n50aixth15n45a
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IRFP450 inverter
Abstract: IXTH12N50A IXTH15N45A 2N6769 2N6770 IRFC450 IXTH12N50 ITXH12N45
Contextual Info: 4686226 I X Y S CORP 03 D e | 4 fl t. E S t. DOODEIS 5 / 7 □IXYS TECHNICAL DATA SHEET August 1988 DATA SHEET NO. 1004A IRFC450 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V B R D S S - . 500V 0.4Q RDS(on) .
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irfc4502n67692n6770irf450/irfp450+11irf451/irfp451irf452/irfp4521rf453/irfp453ixth15n50a/ixtm15n50aixth15n45a/ixtm15n45aixth12n50a/ixtm12n50airfp450 inverterixth12n50aixth15n45aixth12n50itxh12n45
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IRFC430
Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
Contextual Info: MOSFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0
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t0213aastfj120stfj130stfj140+16stfj220stfk23qstfj240stfj320stfj330stfj340irfc430irfg 40irfc330irfc120stf460irfcg40irfc420irfcf30stf250irfc440
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IXTH40N25
Abstract: irfp450 equivalent IXTH7P50 IXTH12N90 IXTD50N20-7X IXTD11N80 IRFP460 equivalent
Contextual Info: Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type V *BSS m ax. e * m ax. typ- typ. Chip type C hips» se «18 Source Ct bond w ire T j.s lS O 'C V - datasheet Q ns mm Dim. out line No. mfts IXTD67N10-7X IXTD75N10-7X 100 0.025
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ixtd67n10-7xixtd75n10-7xixtd42n20-7xixtd50n20-7x+12ixtd40n25-6xixtd40n30-7xirfc450-5xirfc460-6xixtd21n50-7xixtd24n50-7xixth40n25irfp450 equivalentixth7p50ixth12n90ixtd11n80irfp460 equivalent
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IRFZ44 equivalent
Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
Contextual Info: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214
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irfc014irfc110irfc210irfc214+15irfc310irfc024irfc120irfc220irfc224irfc320irfz44 equivalentirfbe30 equivalentirfbg30 equivalentirfpe40 equivalentirfp150 equivalentirfz14 equivalentirfp450 equivalentirfp250 irfp460irfce30
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irfc140
Abstract: IRFC9230 IRFC9140 IRFC9240 IRFC120 IRFC330 IRFC420 IRFC340 IRFC9130 irfc230
Contextual Info: SURFACE MOUNT DEVICES o PEAK RDS ON DEVICE B V o ss *D @0.5 (D PACKAGE PAK 1 TYPE VOLTS AMPS OHMS CHIP SNLC120 100 9.2 0.27 IRFC120 SNLC220 200 5.0 0.08 IRFC220 SNLC320 400 3.3 1.80 IRFC320 SNLC420 500 2.5 3.08 IRFC420 SNLC130 100 200 14.0 0.16 IRFC130 9.0
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snlc120snlc220snlc320snlc420+16snlc130snlc230shlc330snlc430snlc140snlc240irfc140irfc9230irfc9140irfc9240irfc120irfc330irfc420irfc340irfc9130irfc230
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1XTH5N100
Abstract: xth6n90 IRFP460 equivalent IXTH7P50 ixth10p50
Contextual Info: lOIXYS_ Standard Power MOSFET and MegaMOS FET Chips N-Channel Enhancement-Mode Type Vwa ÖWL T r ia r e V V 1 M * A iijfit CMpsiza dimensions S o w n OP bvftdw trft iw a in w id Equivalent «M ae Own. out line No mm mils IXTD67N10 IXTD75N10
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ixtd67n10ixtd75n10irfc250ixtd42n20+11ixtd50n20ixtd68n20irfc254ixtd40n25ixtd35m30ixtd40n301xth5n100xth6n90irfp460 equivalentixth7p50ixth10p50
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Cross Reference power MOSFET
Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258
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t0-204aat0-204aet0-220abt0-220ac+10cross reference power mosfetirf 3502 mosfetsd500kdirf3203mosfet irf equivalent booksem 2106 inverter diagramifr822diode byw 56buz41 equivalenttransistor f630
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501-3B
Contextual Info: INTERNATIONAL R E C T I F I E R 2bE D • 4ÔS5452 G0 104SC1 ? ■ Data Sheet No. PD-5.013B International Rectifier 1 3 3n HEXFET Power Module _ ” - ^ CPYIOO Séries Power Half-Bridges Product Summary Description/Features
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s5452104sccpy100cpy135p+4irfc254cpy155pirfc450501-3b
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IRF1644
Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.
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IRF540 n-channel MOSFET
Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.
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qd102tirf540 n-channel mosfetges 9515irf740,irf840+7irc540 equivalentrtv3140irf540 mosfet with maximum vds 30 virf540 p-channel mosfetirlc120an964irfc9140r
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irf*234 n
Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Contextual Info: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5
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4flss455irf*234 nirfbe40irf540 p-channel mosfet+7irfbg40irf540 800virfz24 mosfetirfcg50irfc034hexfet guideinternational rectifier d10
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GG1Q
Abstract: Cpv25 DQ1Q447 HEXFET Characteristics IRFC460
Contextual Info: INTERNATIONAL RECTIFIER 2bE T> • 4 0 55 4 5 5 DQ1Q447 Q ■ Data Sheet No. PD-5.Q20B t -3 °i-a .ri international S Rectifier HEXFET Power Module CPW200 Series Power H-Bridges Description/Features Product Summary The CPW 200 series of HEX FE T power modules are
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dq1q447cpw200cpw235pcpw255p+7cpw256pirfc460irfc254irfc450gg1qcpv25hexfet characteristics
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IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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IRFZ44 equivalent
Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
Contextual Info: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag* Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450
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IRFBE40
Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Contextual Info: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800
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406j
Abstract: 10-32 UNF 2 A 2S8 ULTRAFAST RECTIFIERS IRFC150 IXTD21N50 IRFC140 IRFC9140
Contextual Info: 27 K atrina Road Chelm sford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE R d S(ON) @ IDcont. I»(A ) (ohms) (amps) (watts) Die 100 0.18 @ 7.0 11.0 45 IRFC130 100 200 400 500 -100 0.077 @ 16 0.18 @ 16 0.55 @ 5.5 0.85 @ 7.0
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snf130snf140snf240snf340+12snf1423spfy9140irfc130irfc140irfc240irfc340406j10-32 unf 2 a2s8 ultrafast rectifiersirfc150ixtd21n50irfc9140
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406J
Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC
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FL110
Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case
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ot-89ircc044ircc140ircc240+14ircc244ircc340ircc440ircc054fl110ll110irf7408lr014irc540 equivalentirl1z14girfc024irfbe30 equivalentirfcg50irfbc10lc
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