IRFC430
Abstract: irfg 40 IRFC330 IRFC120 stf460 IRFCG40 IRFC420 IRFCF30 stf250 IRFC440
Contextual Info: MOSFETS N CHANNEL PO W ER M O SFETS PACKAGE T0213AA TO-66 PACKAGE T0204 (TO-3) DEVICE TYPE bvdss VOLTS STFJ120 100 STFJ130 RDS(ON) @0.5 'D OHMS •d CONTINUOUS AMPS PD MAX WATTS 40 CHIP 100 0.3 0.18 12.0 100 0.085 15.0 50 70 IRFG 30 STFJ140 STFJ220 0.8 5.0
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t0213aastfj120stfj130stfj140+16stfj220stfk23qstfj240stfj320stfj330stfj340irfc430irfg 40irfc330irfc120stf460irfcg40irfc420irfcf30stf250irfc440
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1RF520
Abstract: 1RFP460 1RFP150 IRF9540 equivalent irfp450 equivalent 1rfbc20 IRF9640 equivalent 1RFP054 1RFPG50 IRFP260 equivalent
Contextual Info: International HEXFET Power MOSFETs I ö R Rectifier HEX Size Part Number VDS Recommended Source Bonding Wire RDS on Die Outline Figure m|s mm Equivalent Device Type HEXFET® Die 2 IRFC420 500 3 D9 8 0.2 *> IRFCC20 600 4.4 DIO 8 0.2 1RFBC20 2 IRFCE20 800
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irfc420irfcc20irfce20irfcf20+16irfcg201rfc034irfc120irfcg50irfcc40irfc4601rf5201rfp4601rfp150irf9540 equivalentirfp450 equivalent1rfbc20irf9640 equivalent1rfp0541rfpg50irfp260 equivalent
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IRFZ44 equivalent
Abstract: IRFBE30 equivalent IRFBg30 equivalent IRFPE40 equivalent IRFC110 IRFP150 equivalent IRFZ14 equivalent irfp450 equivalent Irfp250 irfp460 IRFCE30
Contextual Info: International l SRectifier HEXFET Power MOSFETs Table I. HEXFET III Die Recomnn. Source Bondi ig Wire Die 1 Outline Figure mils mm Equivalent Device Type HEX Size Part Number V DS Z IRFC1Z0 100 2.400 D1 3 0.08 IRFS1Z0 1 1 1 1 1 IRFC014 IRFC110 IRFC210 IRFC214
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irfc014irfc110irfc210irfc214+15irfc310irfc024irfc120irfc220irfc224irfc320irfz44 equivalentirfbe30 equivalentirfbg30 equivalentirfpe40 equivalentirfp150 equivalentirfz14 equivalentirfp450 equivalentirfp250 irfp460irfce30
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IRFC44
Abstract: STFM150 shf206 IRFC460 IRFC9140 IRFC9240 IRFC340 IRFC440
Contextual Info: MOSFETS PACKAGE TO-254 RDS ON •d @ 0.5 *D CONTINUOUS >D VOLTS OHMS AMP WATTS CHIP 100 200 200 400 400 400 500 500 500 500 600 600 600 800 800 900 900 1000 1000 0.065 0.2 0.1 0.56 0.3 0,2 0.85 0.4 0.27 0.23 0.7 0.6 0.36 1.2 1.8 2.0 1.0 2.4 1.1 25.0 15.0
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o-254stfm150stfm240stfm250+13stfm340fm350stfm360stfm440stfm450stfm460irfc44shf206irfc460irfc9140irfc9240irfc340irfc440
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IRFC9130
Abstract: SNF80504 IRFC360 IRFC250 SPF8
Contextual Info: I to MOSFETS HI Ik A o s DUAL N CHANNEL PO W ER M O SFETS PACKAGE 6 PIN SIP TO-61 ISOLATED RDS(ON *D DEVICE bvdss @ 0 .5 ' d CONTINUOUS Pd TYPE VOLTS OHMS OHMS WATTS CHIP SND600 600 0.6 IXTD15N60 SND500 500 0.4 11.0 14.0 125 125 IRFC450 SND460 600 20.0 125
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snd600snd500snd460snd410+11snd400snd310snd300snd200snd100ixtd15n60irfc9130snf80504irfc360irfc250spf8
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IRF540 n-channel MOSFET
Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.
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qd102tirf540 n-channel mosfetges 9515irf740,irf840+7irc540 equivalentrtv3140irf540 mosfet with maximum vds 30 virf540 p-channel mosfetirlc120an964irfc9140r
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irf*234 n
Abstract: IRFBE40 IRF540 p-channel MOSFET IRFBG40 irf540 800v irfz24 mosfet IRFCG50 IRFC034 HEXFET Guide international rectifier d10
Contextual Info: INTERNATIONAL RECTIFIER 2bE D International S S Rectifier • 4flSS455 OOIQIOO b ■ HEXFET Die T-3J'?0 . Electrical Probe Specifications for N-Channel HEXFET ill Power MOSFET Die Recommended Bond Wire Size Closest Packaged Part Number Die Figure Number 5
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4flss455irf*234 nirfbe40irf540 p-channel mosfet+7irfbg40irf540 800virfz24 mosfetirfcg50irfc034hexfet guideinternational rectifier d10
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IRFC9130
Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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an-955an-9860-60van-964d+10irfc9130irfc130irlc034irlc024irfcg20irfc9014irfc110irfc9230irfc9120irfc430
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IRFZ44 equivalent
Abstract: IRFBE30 equivalent IRFP260 equivalent IRFC110 irf634 equivalent IRF540 IRFZ48 equivalent irf*234 n IRFCG50 IRFC034
Contextual Info: I I n t e r n a t io n a l R e c t if ie r HEXFET Power MOSFETS BVdss Drain Sourct Vofcag* Vote PMt Numbtr Rd s m Ondate IMltMCI (Ohm) H E X -P a k M o d u l« P a ra lle l Chip N-Cham xel 60 IRFK4H054 100 IRFK4H150 200 IRFK4H250 400 IRFK4H350 500 IRFK4H450
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irfk4h054irfk4h150irfk4h250irfk4h350+16irfk4h450irfk4hc50irfk4he50irfk4j054irfk4j150irfk4j250irfz44 equivalentirfbe30 equivalentirfp260 equivalentirfc110irf634 equivalentirf540irfz48 equivalentirf*234 nirfcg50irfc034
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IRFBE40
Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Contextual Info: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800
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irfk2d054irfk2d150irfk2d250irfk2d350+16irfk2d450irfk2dc50irfk2de50irfk3d150irfk3d250irfk3d350irfbe40irfbg40mosfet irf460irlc140irfc9024irfbf40irlc120irlc014irfc9034irlc034
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IRFC9140R
Abstract: IRFCE40 irfcg40 irfc140 IRFCF30 IRFC9140 IXTD11N80
Contextual Info: MOSFETS A N CH A N N EL PO W ER M O SFETS Mb PACKAGE 10-257 DEVICE TYPE SNF31Û40 SNF30940 SNF30824 SNF30828 SNF3Q613 SNF44Ö SNF340 SNF240 SNF140 ROS (ON @0.5 *0 OHMS 4.0 4.0 2.4 3.2 1.3 0.86 0.56 0.19 0.095 *0 CONTINUOUS AMP 3.3 3.3 4.3 4.0 5.5 8.0 10.0
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snf31snf30940snf30824snf30828+12snf3q613snf44snf340snf240snf140irfcg40irfc9140rirfce40irfc140irfcf30irfc9140ixtd11n80
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406j
Abstract: 10-32 UNF 2 A 2S8 ULTRAFAST RECTIFIERS IRFC150 IXTD21N50 IRFC140 IRFC9140
Contextual Info: 27 K atrina Road Chelm sford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A PO W ERHO USE R d S(ON) @ IDcont. I»(A ) (ohms) (amps) (watts) Die 100 0.18 @ 7.0 11.0 45 IRFC130 100 200 400 500 -100 0.077 @ 16 0.18 @ 16 0.55 @ 5.5 0.85 @ 7.0
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snf130snf140snf240snf340+12snf1423spfy9140irfc130irfc140irfc240irfc340406j10-32 unf 2 a2s8 ultrafast rectifiersirfc150ixtd21n50irfc9140
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FL110
Abstract: LL110 irf7408 lr014 IRC540 equivalent IRL1Z14G IRFC024 IRFBE30 equivalent IRFCG50 irfbc10lc
Contextual Info: H EXFET Other Products from IR SOT-89 N-Channel V BR q s s Drain-to-Source ROS(on) Part Breakdown On-State Number Voltage Resistance (Volt) (Ohms) IRFS1Z0 100 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps) 2.4 0.82 Iq Continuous RthJAMax P d @ T c = 25°C Case
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ot-89ircc044ircc140ircc240+14ircc244ircc340ircc440ircc054fl110ll110irf7408lr014irc540 equivalentirl1z14girfc024irfbe30 equivalentirfcg50irfbc10lc
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HEXFET III - A new Generation of Power MOSFETs
Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Contextual Info: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power
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an-955an-986an-966-250v+9an-964dhexfet iii - a new generation of power mosfetsirf 1490irfc90241000v p-channel mosfetapplication new hexfetan966transistor 9527irfc210
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