IRFC9120 Search Results

Contextual Info: INTERNATIONAL RECTIFIER 2bE D m MÔSSMS2 OOlOHbì T • Data Sheet No. PD-5.015B t - zü-sli .„iternational Rectifier HEXFET Power Module CPY300 Series 3-Phase Bridges Product Summary Description/Features The CPY300 series of H EX FE T power modules are

IRC540 equivalent

Abstract: IRFC9034 irfc9024 IRFC9230 IRLC140 IRFC9220 IRLC120 IRF9540 equivalent IRF9640 equivalent IRL530 equivalent
Contextual Info: H EXFET International Power MOSFETs Table I. HEXFET III Die Continued HEX Size Part Number VDS RDS(on) Max Die (1) Outline Figure S Ö H R e C t if ie r Recomm. Source Bonding Wire mils I Equivalent Device mm type P-Channel HEXFETs 1 1 1 2 2 2 3 3 3 4 4

irft 200

Abstract: IRFT002 irfc9024 HEXFET Power MOSFET P-Channel IRFT004 IRFT001 irfc9
Contextual Info: INTERNATIONAL RECTIFIER 2bE D • 4055452 QG1Q44B 3 ■ Preliminary Data Sheet No. PD-S.021B -3*?-a 7 International H>! Rectifier HEXFET Power Module IRFT Series 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are

IRF1644

Abstract: 12CTQ030-12CT0045 10JQ030-10JQ100 IRL0024 31D003-31D010 IRKT210-16 IRF1401 6cw 78 IRF140-143 IRFT003
Contextual Info: International i « r R e c tifie r PART NO./SERIES 100HF20-100HF160. 100JB05L-100JB12L. 10CTF10-10CTF40. 10CTQ140.150. 10D05-10010.

IRF540 n-channel MOSFET

Abstract: GES 9515 irf740,irf840 IRC540 equivalent RTV3140 IRF540 mosfet with maximum VDS 30 V IRF540 p-channel MOSFET IRLC120 AN964 IRFC9140R
Contextual Info: I R , „-riJ- L . ,», IGBT, HEXFET, HEXSense and Logic Level Die in t e r n a t io n a l - INTERNATIONAL R E C T I F I E R StE D • QD102tib ? ■ IGBTs, HEXFET, HEXSENSE and LOGIC LEVEL HEXFET DIE ^ - q/-OS~ International Rectifier now support Die and Wafer sales from their European Headquarters at Oxted, England.

IRFC9130

Abstract: IRFC9140
Contextual Info: INTERN ATI ONAL RECTIFIER SbE D • 4flS54S2 QG1G101 fl ■ HEXFET Die N-Channel International l&R| Rectifier > Electrical Probe Specifications for P-Channel H E X F E T f & III Power M O S FE T Die Recommended Bond Wire S i n Hex Size 1 2 3 4 Part Number

IRFC9130

Abstract: irfc130 IRLC034 IRLC024 irfcg20 IRFC9014 IRFC110 IRFC9230 irfc9120 IRFC430
Contextual Info: APPLICATION NO TE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power

IRC540 equivalent

Abstract: IRF9540 equivalent IRL530 equivalent IRF9640 equivalent IRLC140 IRLC120 IRFC9034 irfc9120 IRFC9110 IRLC034
Contextual Info: I n t e r n a t i o n a l R e c t i f ie r n sa H HEXFET Power MOSFETS HEX Sia PartNumber Recommended Source Bonding Win mis mm Vos R0S on M" Die Olitine Rgurt -60 -100 -200 -60 -100 -200 -60 -100 -200 -100 -200 0.500 1.200 3.000 0.280 0.600 1.500 0.140

IRFBE40

Abstract: IRFBG40 MOSFET IRF460 IRLC140 irfc9024 IRFBF40 irlc120 IRLC014 IRFC9034 IRLC034
Contextual Info: International 1»] Rectifier Power M O S FET s HEX-Pak Modules TÜ -2 40 N-Channel Part Number s Drain Source Voltage Volts RDS(on) On-State Resistance (Ohms) IRFK2D054 IRFK2D150 IRFK2D250 IRFK2D350 IRFK2D450 IRFK2DC50 IRFK2DE50 60 100 200 400 500 600 800

IRFT002

Abstract: irfc9024 IRFC9120 IRFT001 IRFC120 HEXFET Characteristics irfc024 60V Single N-Channel HEXFET Power MOSFET HEXFET Power MOSFET P-Channel
Contextual Info: INTERNATIONAL RECTIFIER bSE » • 4flS5MS2 G d l b t m 0T7 H I N R Preliminary Data Sheet No. PD-5.021D International S Rectifier HEXFET Power Module IRFT001 & IRFT002 3-Phase Bridges Product Summary Description/Features The IRFT series of HEXFET power modules are

406J

Abstract: JD 1801 irfc230 IRFC430 IRFC9230 IRFC130 2N6756 IRFC110 2N6847 irfc250
Contextual Info: 27 Katrina Road Chelmsford, MA 01824 Tel: 978 256-3321 Fax: (978)250-1046 Web: www.stcsemi.com A POW ERHO USE All devices are available screened to TX, TXV, or S Level equivalent. Reference the High-Reliability Screening table for details. Contact your local Representative or STC

HEXFET III - A new Generation of Power MOSFETs

Abstract: irf 1490 AN-964D irfc9024 AN-966 1000V P-channel MOSFET application new hexfet AN966 transistor 9527 IRFC210
Contextual Info: APPLICATION NOTE 964D Characteristics of HEXFET Gen III Die HEXFET is the registered trademark for International Rectifier Power MOSFETs Introduction This application note describes the HEXFET Power MOSFETs in the HEXFET III family available from International Rectifier in die form. These power